公开(公告)号：KR100460140B1

公开(公告)日：2004-12-03

申请号：KR1020010078578

申请日：2001-12-12

Applicant: 삼성전자주식회사

Inventor： 이승우 ,  임민규

IPC: H01L21/00

CPC classification number: C23C16/52 ,  C23C16/4401

Abstract: A gas supplying apparatus of a system for fabricating semiconductor devices is tested for clogs. The gas supplying apparatus includes a carrier gas supplying device for supplying at least one carrier gas, and a plurality of reactive gas supplying devices connected in parallel to the carrier gas supplying device. The reactive gas supplying devices gasify the reactive gas carried by the carrier gas. A wafer, on which a desired layer is to be formed, is situated in a process chamber into which the reactive gas is supplied from the reactive gas supplying devices. The gas supplying apparatus also includes pressure detecing devices for detecting the pressure of the carrier gas near each of the reactive gas supplying devices. The carrier gas is supplied under a predetermined pressure to the reactive gas supplying devices. The reactive gas supplying device to be tested for clogs is rendered operational while the other reactive gas supplying devices are shut down. The pressure of the carrier gas near an outlet of the carrier gas supplying device is compared to the pressure of the carrier gas near an inlet of the reactive gas supplying device being tested to determine if the device is clogged.

Abstract translation: 测试用于制造半导体器件的系统的气体供应设备的堵塞。 该气体供给装置包括用于供给至少一种载气的载气供给装置以及与载气供给装置并联连接的多个反应气体供给装置。 反应气体供应装置气化载气携带的反应气体。 其上将形成所需层的晶片位于从反应气体供应装置供应反应气体的处理室中。 气体供给装置还包括用于检测每个反应气体供给装置附近的载气的压力的压力检测装置。 载气在预定压力下供应到反应气体供应装置。 待测试阻塞的反应气体供应装置在其他反应气体供应装置关闭的同时运行。 将载气供应装置的出口附近的载气的压力与正在测试的反应气体供应装置的入口附近的载气的压力进行比较，以确定装置是否堵塞。

公开(公告)号：KR1020010055432A

公开(公告)日：2001-07-04

申请号：KR1019990056641

申请日：1999-12-10

Applicant: 삼성전자주식회사

Inventor： 임민규

IPC: H01L21/304

Abstract: PURPOSE: A cleaning method for a BPSG process is provided to reduce a cleaning time within a range which does not have an effect to a BPSG process. CONSTITUTION: An inside of a chamber of a semiconductor manufacturing system is cleaned whenever a BPSG process for each wafer forming one lot is completed(S100). A coating process for the inside of the chamber is performed after the chamber cleaning process is finished(S300). A cleaning process for a pressure control device of the chamber is performed after the BPSG process for the last wafer of one lot is completed(S400). In the press control device is formed with a throttle valve.

Abstract translation: 目的：提供BPSG工艺的清洁方法，以减少对BPSG工艺无影响的范围内的清洁时间。 构成：每当完成形成一批的每个晶片的BPSG工艺完成时，清洁半导体制造系统的室的内部（S100）。 在室清洁处理结束之后进行室内的涂布处理（S300）。 在完成一批批次的最后一个晶片的BPSG处理之后，执行用于室的压力控制装置的清洁处理（S400）。 在压力控制装置中形成有节流阀。

公开(公告)号：KR1020040045750A

公开(公告)日：2004-06-02

申请号：KR1020020073604

申请日：2002-11-25

Applicant: 삼성전자주식회사

Inventor： 백홍주 ,  임민규 ,  이승무

IPC: H01L21/205

Abstract: PURPOSE: A high density plasma type CVD(Chemical Vapor Deposition) apparatus is provided to be capable of reducing the generation of arc and decreasing the generation of particles due to the arc. CONSTITUTION: A high density plasma type CVD apparatus is provided with a process chamber(102) having a wafer support part(101) for loading a wafer(W), a cover(103) for covering the upper portion of the process chamber, and a gas ring part(111) installed between the process chamber and the cover for flowing process gas onto the wafer. At this time, a plurality of nozzles are installed at the gas ring part. The high density plasma type CVD apparatus further includes an arc generation preventing layer(130) installed at the inner walls of the process chamber and the gas ring part. Preferably, the arc generation preventing layer is made of non-conducting material. Preferably, the arc generation preventing layer is made of AlN or Al2O3.

Abstract translation: 目的：提供高密度等离子体CVD（化学气相沉积）装置，以能够减少电弧的产生并减少由于电弧产生的颗粒。 构成：高密度等离子体CVD装置设置有具有用于加载晶片（W）的晶片支撑部（101），用于覆盖处理室的上部的盖（103）的处理室（102），以及 安装在处理室和盖之间的气环部分（111），用于使处理气体流到晶片上。 此时，多个喷嘴安装在气环部。 高密度等离子体CVD装置还包括安装在处理室的内壁和气环部分的电弧产生防止层（130）。 优选地，电弧产生防止层由非导电材料制成。 优选地，电弧产生防止层由AlN或Al2O3制成。

公开(公告)号：KR1020070090567A

公开(公告)日：2007-09-06

申请号：KR1020060020432

申请日：2006-03-03

Applicant: 삼성전자주식회사

Inventor： 김경태 ,  문성환 ,  백홍주 ,  임민규

IPC: H01L21/304

Abstract: A method for cleaning a process chamber in semiconductor device fabricating equipment is provided to prevent generation of particles in a process gas injection hole by injecting fluorine gas while injecting inert gas through the process gas injection hole. A wafer having undergone a thin film deposition process is taken out from a process chamber(204). Cleaning gas is injected to the inside of the process chamber to eliminate the contaminants in the process chamber while inert gas is injected into the process gas injection hole to prevent the cleaning gas from being introduced into the process gas injection hole through which process gas for depositing a thin film is injected(206). The injected process gas for a thin film deposition process can be SiH4, NH3 or O2.

Abstract translation: 提供了一种用于清洁半导体器件制造设备中的处理室的方法，以通过注入氟气同时通过工艺气体注入孔注入惰性气体来防止在工艺气体注入孔中产生颗粒。 已经经过薄膜沉积工艺的晶片从处理室（204）中取出。 将清洁气体注入到处理室的内部以消除处理室中的污染物，同时将惰性气体注入到工艺气体注入孔中，以防止清洁气体被引入工艺气体注入孔，通过该工艺气体进行沉积 注入薄膜（206）。 用于薄膜沉积工艺的注入工艺气体可以是SiH 4，NH 3或O 2。

公开(公告)号：KR1020030048622A

公开(公告)日：2003-06-25

申请号：KR1020010078578

申请日：2001-12-12

Applicant: 삼성전자주식회사

Inventor： 이승우 ,  임민규

IPC: H01L21/00

CPC classification number: C23C16/52 ,  C23C16/4401

Abstract: PURPOSE: A semiconductor manufacturing reaction gas supply apparatus capable of detecting the clogging state of an injection valve and a method for detecting the clogging state are provided to be capable of selectively and exactly discriminating whether each injection valve is clogged or not by installing pressure sensing parts at one side of each reaction gas supply part. CONSTITUTION: Carrier gas is supplied from a carrier gas supply part(100). A plurality of reaction gas supply parts are installed and bridged from the carrier gas supply part(100) for supplying reaction gases to a chamber(500) using the carrier gas. At this time, a predetermined layer is formed on a semiconductor device by the supplied reaction gases in the chamber(500). A plurality of pressure sensing parts are installed between the carrier gas supply part(100) and the reaction gas supply parts for sensing the supply pressure of the carrier gas. Preferably, the pressure sensing parts include mass flow meters(200,300,400), respectively.

Abstract translation: 目的：提供能够检测喷射阀的堵塞状态的半导体制造反应气体供给装置和检测堵塞状态的方法，能够通过设置压力检测部件来选择性地和精确地判断各喷射阀是否堵塞 在每个反应气体供应部分的一侧。 构成：载气从载气供给部（100）供给。 多个反应气体供给部分从载气供应部分（100）安装和桥接，用于使用载气将反应气体供应到室（500）。 此时，通过在室（500）中供应的反应气体，在半导体器件上形成预定层。 在载气供给部（100）和反应气体供给部之间安装有多个压力检测部，用于检测载气的供给压力。 优选地，压力检测部分分别包括质量流量计（200,300,400）。

公开(公告)号：KR2020000015058U

公开(公告)日：2000-07-25

申请号：KR2019980028438

申请日：1998-12-31

Applicant: 삼성전자주식회사

Inventor： 김용갑 ,  임민규 ,  유동호

IPC: H01L21/02

Abstract: 본 고안은 반도체설비의 트로틀밸브를 개시한다. 이에 의하면, 트로틀밸브 구동축의 외주면에 절취부가 형성되고 이러한 트로틀밸브가 실(seal)에 설치된다.
따라서, 실에 접촉하는 트로틀밸브 구동축의 외주면이 축소되므로 진공챔버에서 발생된 부산물인 파우더에 의한 트로틀밸브 구동 불가능이 발생할 가능성이 감소한다. 이는 트로틀밸브의 구동 불가능에 따른 설비 정비에 소요되는 인력과 시간을 줄일 수 있고 나아가 설비의 가동시간 증가에 따른 생산성 향상을 도모할 수 있다.

公开(公告)号：KR1020000038208A

公开(公告)日：2000-07-05

申请号：KR1019980053114

申请日：1998-12-04

Applicant: 삼성전자주식회사

Inventor： 유동호 ,  임민규

IPC: H01L21/208

Abstract: PURPOSE: A method for manufacturing a thin film of a semiconductor device is provided to improve the uniformity of the thickness of the thin film by stably supplying an active gas to a process chamber. CONSTITUTION: A semiconductor substrate is loaded in a process chamber(100). A main active gas is flown from a main active gas supplying apparatus(110) and the main active gas is maintained stable. Then, an auxiliary active gas is flown from an auxiliary active gas supplying apparatus(121) and the auxiliary active gas is maintained stable. The stable main active gas and auxiliary gas are supplied into the process chamber(100) so as to form a thin film on the semiconductor substrate. The auxiliary active gas includes materials which are doped into the thin film of the semiconductor substrate.

Abstract translation: 目的：提供一种制造半导体器件的薄膜的方法，用于通过向处理室稳定地供应活性气体来改善薄膜厚度的均匀性。 构成：将半导体衬底装载到处理室（100）中。 主活性气体从主活性气体供给装置（110）流出，主活性气体保持稳定。 然后，辅助活性气体从辅助活性气体供给装置（121）流出，辅助活性气体保持稳定。 将稳定的主活性气体和辅助气体供给到处理室（100）中，以便在半导体衬底上形成薄膜。 辅助活性气体包括掺杂到半导体衬底的薄膜中的材料。

公开(公告)号：KR1020040017753A

公开(公告)日：2004-02-27

申请号：KR1020020050192

申请日：2002-08-23

Applicant: 삼성전자주식회사

Inventor： 박충훈 ,  백홍주 ,  홍형식 ,  김용갑 ,  금경수 ,  임민규 ,  김경태 ,  이기석

IPC: H01L21/205

Abstract: PURPOSE: An injection valve and a CVD(Chemical Vapor Deposition) apparatus including the same are provided to be capable of increasing the vaporizing efficiency of liquid source, restraining a clogging phenomenon, and prolonging the lifetime of the injection valve. CONSTITUTION: An injection valve is provided with a carrier gas inflow port, a mixed gas exhaust port for exhausting carrier gas and source gas, and an injecting surface between the carrier gas inflow port and the mixed gas exhaust port for heating liquid source chemicals. The injection valve further includes a source inflow port(50) for flowing the liquid source chemicals, a body part(10) formed along the peripheral portion of the injecting surface, a flow control part(70) located at the upper portion of the body part for controlling the flow of the liquid source chemicals, and a buffer part(80) between the body part and the flow control part.

Abstract translation: 目的：提供包括该喷射阀和CVD（化学气相沉积）装置的喷射阀和化学气相沉积装置，以便能够提高液体源的蒸发效率，抑制堵塞现象，并延长喷射阀的使用寿命。 构成：喷射阀设置有载气流入口，用于排出载气和源气体的混合气体排出口，以及载气流入口和混合气体排出口之间用于加热液体源化学品的注入面。 喷射阀还包括用于使液体源化学品流动的源流入口（50），沿喷射表面的周边部分形成的主体部分（10），位于主体上部的流动控制部分（70） 用于控制液体源化学品的流动的部分，以及主体部分和流量控制部分之间的缓冲部分（80）。