公开(公告)号：KR1020080019082A

公开(公告)日：2008-03-03

申请号：KR1020060079616

申请日：2006-08-23

Applicant: 삼성전자주식회사

Inventor： 김진성 ,  김태영 ,  백홍주

IPC: H01L21/205

CPC classification number: C23C16/4401 ,  C23C16/513

Abstract: A plasma deposition apparatus for manufacturing a semiconductor device is provided to prevent previously contamination of peripheral equipment by removing residual deionized water from a cathode. A wafer is loaded on a cathode. The cathode receives RF power from generating plasma. An air supply line(116) is formed to blow air with respect to residual deionized water on the cathode. A deionized water draining line(118) is formed to drain the deionized water to the outside by using the air received through the air supply line. The air supply line includes an air supply valve for adjusting the amount of air and an air supply tube for blowing the air. The air supply tube and the deionized draining line are formed with a shape of rubber tube.

Abstract translation: 提供一种用于制造半导体器件的等离子体沉积设备，以通过从阴极去除残留的去离子水来防止外部设备的先前污染。 晶片装载在阴极上。 阴极从产生等离子体接收RF功率。 空气供应管线（116）被形成为相对于阴极上的残余去离子水吹空气。 形成去离子水排水管线（118），通过使用通过供气管路接收的空气将去离子水排出到外部。 供气管路包括用于调节空气量的供气阀和用于吹送空气的空气供应管。 空气供给管和去离子排水管形成为橡胶管的形状。

公开(公告)号：KR1020070090567A

公开(公告)日：2007-09-06

申请号：KR1020060020432

申请日：2006-03-03

Applicant: 삼성전자주식회사

Inventor： 김경태 ,  문성환 ,  백홍주 ,  임민규

IPC: H01L21/304

Abstract: A method for cleaning a process chamber in semiconductor device fabricating equipment is provided to prevent generation of particles in a process gas injection hole by injecting fluorine gas while injecting inert gas through the process gas injection hole. A wafer having undergone a thin film deposition process is taken out from a process chamber(204). Cleaning gas is injected to the inside of the process chamber to eliminate the contaminants in the process chamber while inert gas is injected into the process gas injection hole to prevent the cleaning gas from being introduced into the process gas injection hole through which process gas for depositing a thin film is injected(206). The injected process gas for a thin film deposition process can be SiH4, NH3 or O2.

Abstract translation: 提供了一种用于清洁半导体器件制造设备中的处理室的方法，以通过注入氟气同时通过工艺气体注入孔注入惰性气体来防止在工艺气体注入孔中产生颗粒。 已经经过薄膜沉积工艺的晶片从处理室（204）中取出。 将清洁气体注入到处理室的内部以消除处理室中的污染物，同时将惰性气体注入到工艺气体注入孔中，以防止清洁气体被引入工艺气体注入孔，通过该工艺气体进行沉积 注入薄膜（206）。 用于薄膜沉积工艺的注入工艺气体可以是SiH 4，NH 3或O 2。

公开(公告)号：KR1020010095470A

公开(公告)日：2001-11-07

申请号：KR1020000016532

申请日：2000-03-30

Applicant: 삼성전자주식회사

Inventor： 백홍주

IPC: H01L21/3105

Abstract: PURPOSE: A semiconductor device is provided to prevent an oxidation of a bit line by additionally forming an oxide layer on a stopping layer by in-situ. CONSTITUTION: A bit line(104) having a doped polysilicon(102a) and a tungsten silicide(102b) is formed on an active region of a semiconductor substrate(100). A stopping layer(106) made of a nitride is formed on the resultant structure. An oxide layer(108) is formed on the entire surface of the stopping layer(106). On the oxide layer(108), an interlayer dielectric(110) planarized by a wet reflow process is formed. At this time, the oxide layer(108) is formed by in-situ after forming the stopping layer(106) made of a nitride.

Abstract translation: 目的：提供一种半导体器件，用于通过在原位上另外在停止层上形成氧化物层来防止位线的氧化。 构成：在半导体衬底（100）的有源区上形成具有掺杂多晶硅（102a）和硅化钨（102b）的位线（104）。 在所得到的结构上形成由氮化物制成的停止层（106）。 在停止层（106）的整个表面上形成氧化物层（108）。 在氧化物层（108）上，形成通过湿回流工艺平坦化的层间电介质（110）。 此时，在形成由氮化物制成的阻挡层（106）之后，原位形成氧化物层（108）。

公开(公告)号：KR1020000027585A

公开(公告)日：2000-05-15

申请号：KR1019980045540

申请日：1998-10-28

Applicant: 삼성전자주식회사

Inventor： 오성태 ,  김경태 ,  백홍주 ,  김훈기

IPC: H01L21/3205

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76856 ,  H01L21/76876 ,  H01L2221/1089

Abstract: PURPOSE: A method for manufacturing a tungsten layer of a semiconductor device is provided to enhance an electric speed of a semiconductor device and provide the flexibility of a design structure of metal wiring by reducing a resistivity of a tungsten film excellent in buried characteristics. CONSTITUTION: A surface of a boundary metal film(26) formed on a semiconductor substrate(20) is pre-processed by using SiH4 gas at a pressure atmosphere more than 40Torr. A tungsten seed film is formed on the pre-processed surface of the boundary metal film(26) by using a WF6+SiH4 gas meeting the condition that £WF6|/£SiH4| is less than or equal to 1 in a flow rate. A tungsten film(f28) is formed on the boundary metal film(26) on which the tungsten seed film by using WF6 gas. The boundary metal film(26) is composed of a Ti film and a TiN film sequentially formed.

Abstract translation: 目的：提供一种制造半导体器件的钨层的方法，以提高半导体器件的电速，并通过降低掩埋特性优良的钨膜的电阻率来提供金属布线的设计结构的灵活性。 构成：形成在半导体衬底（20）上的边界金属膜（26）的表面通过在大于40Torr的压力气氛下使用SiH 4气体进行预处理。 通过使用满足以下条件的WF6 + SiH4气体，在边界金属膜（26）的预处理表面上形成钨种子膜：WF6 | /£SiH4 | 在流量中小于或等于1。 通过使用WF 6气体在其上形成钨种子膜的边界金属膜（26）上形成钨膜（f28）。 边界金属膜（26）由依次形成的Ti膜和TiN膜构成。

公开(公告)号：KR1020080006090A

公开(公告)日：2008-01-16

申请号：KR1020060064792

申请日：2006-07-11

Applicant: 삼성전자주식회사

Inventor： 김진성 ,  김대현 ,  김자현 ,  문석훈 ,  백홍주 ,  이재혁

IPC: H01L21/02

CPC classification number: H01L21/02282 ,  H01L21/56 ,  H01L21/6715

Abstract: A guide cup of an apparatus for coating a wafer is provided to prevent or suppress an NRD(Negative Resist Developer) solution from being dropped to a surface of the wafer. A guide cup(100) of an apparatus for coating a wafer is provided in a standard cup. The standard cup is used for coating the wafer by injecting chemicals to a top part of the wafer. An inclination angle between an inner periphery(132) and an outer periphery(134) is substantially 68 degrees. The guide cup of the apparatus for coating the wafer is cut so that the inclination angle between the inner periphery and the outer periphery is larger than 60 degrees. A diameter of the inner periphery of the cup guide is formed larger than 205.6cm. The diameter of the inner periphery is substantially 215.6cm. A height of the guide cup is substantially 24.8cm.

Abstract translation: 提供了一种用于涂覆晶片的装置的引导杯，以防止或抑制NRD（阴性抗蚀剂显影剂）溶液滴落到晶片的表面。 用于涂覆晶片的装置的引导杯（100）设置在标准杯中。 标准杯用于通过将化学品注入到晶片的顶部来涂覆晶片。 内周（132）与外周（134）之间的倾斜角大致为68度。 切割用于涂覆晶片的装置的引导杯，使得内周和外周之间的倾斜角度大于60度。 杯形引导件的内周的直径形成为大于205.6cm。 内周的直径大致为215.6cm。 引导杯的高度基本上为24.8cm。

公开(公告)号：KR1020040045750A

公开(公告)日：2004-06-02

申请号：KR1020020073604

申请日：2002-11-25

Applicant: 삼성전자주식회사

Inventor： 백홍주 ,  임민규 ,  이승무

IPC: H01L21/205

Abstract: PURPOSE: A high density plasma type CVD(Chemical Vapor Deposition) apparatus is provided to be capable of reducing the generation of arc and decreasing the generation of particles due to the arc. CONSTITUTION: A high density plasma type CVD apparatus is provided with a process chamber(102) having a wafer support part(101) for loading a wafer(W), a cover(103) for covering the upper portion of the process chamber, and a gas ring part(111) installed between the process chamber and the cover for flowing process gas onto the wafer. At this time, a plurality of nozzles are installed at the gas ring part. The high density plasma type CVD apparatus further includes an arc generation preventing layer(130) installed at the inner walls of the process chamber and the gas ring part. Preferably, the arc generation preventing layer is made of non-conducting material. Preferably, the arc generation preventing layer is made of AlN or Al2O3.

Abstract translation: 目的：提供高密度等离子体CVD（化学气相沉积）装置，以能够减少电弧的产生并减少由于电弧产生的颗粒。 构成：高密度等离子体CVD装置设置有具有用于加载晶片（W）的晶片支撑部（101），用于覆盖处理室的上部的盖（103）的处理室（102），以及 安装在处理室和盖之间的气环部分（111），用于使处理气体流到晶片上。 此时，多个喷嘴安装在气环部。 高密度等离子体CVD装置还包括安装在处理室的内壁和气环部分的电弧产生防止层（130）。 优选地，电弧产生防止层由非导电材料制成。 优选地，电弧产生防止层由AlN或Al2O3制成。

公开(公告)号：KR1020070050571A

公开(公告)日：2007-05-16

申请号：KR1020050107938

申请日：2005-11-11

Applicant: 삼성전자주식회사

Inventor： 이재혁 ,  강동희 ,  김대현 ,  박광호 ,  백홍주

IPC: H01L21/3065

CPC classification number: H01J37/32522 ,  C23C16/50 ,  H01J37/32853

Abstract: 본 발명은 반도체 돔 타입프로세스 챔버에서 RF 플라즈마 형성 시 과도한 온도상승을 방지할 수 있도록 냉각시키는 반도체 제조설비의 플라즈마 처리장치 및 그 장치의 냉각방법에 관한 것이다.
반도체 제조설비에서 하부챔버의 냉각온도와 상부챔버의 냉각온도를 서로 다르게 하여 크리닝 주기를 연장하여 생산성을 향상시킬 수 있는 반도체 제조설비의 플라즈마 처리장치는, 웨이퍼가 탑재되는 웨이퍼 척과 RF 파워가 인가되는 캐소드가 설치된 하부챔버와, 상기 하부챔버의 케소드의 상부에 설치되어 플라즈마가 발생되어 웨이퍼에 대한 식각이 이루어지는 상부챔버와, 상기 상부챔버의 증착 잔류물을 주기적으로 세척하기 위해 크린개스를 이온화시켜 분사하는 원격플라즈마 시스템과, PCW를 공급하는 PCW공급부와, 상기 하부챔버의 케소드와 상부챔버의 온도를 조절하기 위한 제1 및 제2 냉각수를 발생하는 칠러와, 상기 PCW공급부로부터 공급되는 제1 냉각수를 터보펌프로 공급하기 위한 제1 PCW 공급관과, 상기 터보펌프를 경유하여 공급되는 � �로세스 냉각수를 RPS로 공급하기 위한 제2 PCW 공급관와, 상기 RPS를 경유하여 순환되는 프로세스 냉각수(PCW)를 상기 PCW공급부로 회수하기 위한 PCW 회수관과, 상기 칠러로부터 발생된 제1 냉각수를 상기 상부챔버로 공급하기 위한 제1 냉각수 공급관과, 상기 상부챔버를 경유한 제1 냉각수를 상기 칠러로 회수하기 위한 제1 냉각수 회수관과, 상기 칠러로부터 공급되는 제2냉각수를 상기 하부챔버의 케소드로 공급하기 위한 제2 냉각수 공급관과, 상기 케소드를 경유한 제2 냉각수를 상기 칠러로 회수하기 위한 제2 냉각수 회수관을 포함한다.
CVD공정챔버의 상부챔버와 하부챔버의 케소드를 냉각시킬 경우 서로 다른 온도의 냉각수를 공급하여 CVD공정 진행 중에 상부챔버의 온도가 과도하게 상승하지 않도록 하여 상부챔버의 크리닝 주기를 단축시켜 생산성을 향상시킨다.
열교환유니트, 냉각수용 열교환기, 열전모듈, 칠러

公开(公告)号：KR1020040017753A

公开(公告)日：2004-02-27

申请号：KR1020020050192

申请日：2002-08-23

Applicant: 삼성전자주식회사

Inventor： 박충훈 ,  백홍주 ,  홍형식 ,  김용갑 ,  금경수 ,  임민규 ,  김경태 ,  이기석

IPC: H01L21/205

Abstract: PURPOSE: An injection valve and a CVD(Chemical Vapor Deposition) apparatus including the same are provided to be capable of increasing the vaporizing efficiency of liquid source, restraining a clogging phenomenon, and prolonging the lifetime of the injection valve. CONSTITUTION: An injection valve is provided with a carrier gas inflow port, a mixed gas exhaust port for exhausting carrier gas and source gas, and an injecting surface between the carrier gas inflow port and the mixed gas exhaust port for heating liquid source chemicals. The injection valve further includes a source inflow port(50) for flowing the liquid source chemicals, a body part(10) formed along the peripheral portion of the injecting surface, a flow control part(70) located at the upper portion of the body part for controlling the flow of the liquid source chemicals, and a buffer part(80) between the body part and the flow control part.

Abstract translation: 目的：提供包括该喷射阀和CVD（化学气相沉积）装置的喷射阀和化学气相沉积装置，以便能够提高液体源的蒸发效率，抑制堵塞现象，并延长喷射阀的使用寿命。 构成：喷射阀设置有载气流入口，用于排出载气和源气体的混合气体排出口，以及载气流入口和混合气体排出口之间用于加热液体源化学品的注入面。 喷射阀还包括用于使液体源化学品流动的源流入口（50），沿喷射表面的周边部分形成的主体部分（10），位于主体上部的流动控制部分（70） 用于控制液体源化学品的流动的部分，以及主体部分和流量控制部分之间的缓冲部分（80）。

公开(公告)号：KR1020000026749A

公开(公告)日：2000-05-15

申请号：KR1019980044410

申请日：1998-10-22

Applicant: 삼성전자주식회사

Inventor： 최원익 ,  김경태 ,  백홍주

IPC: H01L21/20

Abstract: PURPOSE: A method for film evaporation is provided to skip many process stages. The method also prevents the appearance of soft cracks inside membrane. CONSTITUTION: A wafer is loaded to an evaporator, and the film of the wafer is coated at room. The coated wafer is treated with heat at the soft bake stage(s102) and unloaded at the hard bake stage(s104) and the wafer cured is unloaded(s106). At the soft bake stage, a large number of water are treated with heat at the same time.

Abstract translation: 目的：提供一种薄膜蒸发方法来跳过许多工艺阶段。 该方法还可防止膜内出现软裂纹。 构成：将晶片装载到蒸发器中，并且将晶片的膜涂覆在室内。 将涂覆的晶片在软烘烤阶段（s102）加热处理，并在硬烘烤阶段（s104）卸载，并且固化的晶片被卸载（s106）。 在软烘烤阶段，大量的水同时被热处理。

公开(公告)号：KR1020080088139A

公开(公告)日：2008-10-02

申请号：KR1020070030625

申请日：2007-03-29

Applicant: 삼성전자주식회사

Inventor： 김경태 ,  백홍주 ,  전용재 ,  조영민

IPC: H01L21/205 ,  H01L21/02

CPC classification number: H01L21/67017 ,  H01L21/67253

Abstract: A device and a method of supplying gas/chemical in a semiconductor manufacturing apparatus are provided to enhance the efficiency of the semiconductor manufacturing apparatus by reducing consumption of work force. A supply control unit(100) controls a flow rate and a speed of gas or chemical received from the outside. The gas or chemical is used in a process chamber. A plurality of tubes are used for forming a path for supplying the controlled gas or chemical to a process chamber(300), and for discharging the controlled gas or chemical to the outside. A three-way valve is formed to discharge the residual gas or chemical to the outside after the gas or chemical is supplied to the process chamber.

Abstract translation: 提供了一种在半导体制造装置中供应气体/化学品的装置和方法，以通过降低工作力的消耗来提高半导体制造装置的效率。 供应控制单元（100）控制从外部接收的气体或化学品的流量和速度。 气体或化学品用于处理室。 多个管用于形成用于将受控气体或化学品供应到处理室（300）的路径，并且用于将受控气体或化学品排放到外部。 在将气体或化学物质供应到处理室之后，形成三通阀以将残留气体或化学物质排出到外部。