Abstract:
PURPOSE: An image sensor for outputting RGB bayer signals through internal conversion, and an image processing apparatus including the same are provided to enable the compatibility with a universal ISP(Image signal Processor) without an additional compatibility device. CONSTITUTION: A pixel array(111) comprises plural pixels including RGB bayer pattern, and an analog-digital converter(114) converts an analog pixel signal outputted from each pixel into a digital pixel signal. An RGB converter(115) converts the digital pixel signal into the RGB bayer signal. The first row line signal of the RGB bayer signal indicates R and G pixel signals which alternatively appear.
Abstract:
PURPOSE: An image sensor is provided to improve image quality by restraining crosstalk without the deterioration of a ratio of an optical sensing area to an overall area of the image sensor. CONSTITUTION: A plurality of optical detecting devices(121, 122, 123) generates an electric signal corresponding to incident light. An insulating layer(140) is formed on the back side(110b) of a semiconductor substrate(110). The insulating layer comprises a plurality of light blocking area(141a, 142a) formed on an area between a plurality of optical detecting devices.
Abstract:
PURPOSE: A color filter array, an image sensor including the same, and electric device including the same are provided to increase the brightness of emitted light by increasing the sensitivity of an incident ray. CONSTITUTION: A first layer comprises a first type color filter, a second type color filter, a first type color filter, and a third type color filter. The second layer comprises a second type color filter, a fourth type color filter, a third type color filter, and a fourth type color filter. A third layer comprises a first type color filter, a third type color filter, a first type color filter, and a second type color filter. A fourth layer comprises a third type color filter, a forth type color filter, a second type color filter, and a fourth type color filter.
Abstract:
PURPOSE: An image sensor is provided to reduce light loss by preventing crosstalk due to incident light which passes through the color filter and is diffracted. CONSTITUTION: An image sensor comprises a first pixel, a second pixel and at least one light reflection pattern. The light reflection pattern inputs the incident light from the outside to the corresponding first or second pixel. A photo-electro converter(110R) is formed on the semiconductor substrate and generates electrons according to the light from the outside. A color filter(340R,340G) is formed on the upper side of the photo-electro converter. A light guide is positioned between the photo-electro converter and the color filter and induces the light from the outside through the color filter to the photo-electro converter in correspondence to the photo-electro converter.
Abstract:
PURPOSE: An image sensor and method for manufacturing the same are provided to improve light concentration efficiency. CONSTITUTION: The substrate(110) includes the first area (b) and the second part (a,c). The first area has the level difference higher than the second part. In the upper part of the first area, the pixel array area(130) is formed. The surrounding circuit areas(120 1,120 2) are formed on the upper part of the second part. The first area has the level difference higher than the second part. Therefore, the aspect ratio of the pixel array area diminishes.
Abstract:
PURPOSE: A unit pixel including a micro lens for photo refraction, a backside illumination CMOS image sensor including the same, and a manufacturing method thereof are provided to improve the sensitivity of light by suppressing the number of photons. CONSTITUTION: A micro lens(110) for photon refraction refracts photons to the center of a photo diode(PD1,PD2). The photons are reflected from a metal layer(130). The micro lens for photon refraction is arranged between the photo diode and the metal layer. The micro lens for the photon refraction is convex in a metal layer direction. The thickest part of the micro lens for photo refraction is 2000 to 3500 angstroms.
Abstract:
PURPOSE: An image sensor, an image processing apparatus including the same, and an interpolation method of the image processing apparatus are provided to make different the saturation level of a photo diode which consists of a pixel. CONSTITUTION: A converter changes an analog image signal outputted from a pixel array into a digital image signal. The pixel array includes multiple unit pixel blocks(101,102). The unit pixel block consists only of a pixel(L) for low illumination or a pixel(H) for high illumination. The pixel for low illumination includes a first photoelectric conversion element accumulating positive charges which is less than those of a reference value. The pixel for high illumination includes a second photoelectric conversion element accumulating positive charges which is more than those of the reference value.