公开(公告)号：KR1020010027887A

公开(公告)日：2001-04-06

申请号：KR1019990039865

申请日：1999-09-16

Applicant: 삼성전자주식회사

Inventor： 조정온

IPC: H01L21/203

Abstract: PURPOSE: An apparatus for cooling a cathode is to simplify a circulating system of cooling water, thereby facilely performing an interlock function for previously preventing circulation defect of the cooling water. CONSTITUTION: Pluralities of cooling water flowing pipes are disposed between a cathode supplying portion(32) and a cathode returning portion(34). The cooling water flowing pipes are disposed in series to form one flowing line. A pressure gauge(52,54) for detecting change of pressure of the cooling water is disposed at a supplying pipe(41) and a returning pipe(45) of the cooling water flowing pipe. The cooling water supplied from a cooling water-supplying portion is flowed through a heater block and a flow switch to equipment. The flow switch detects flow of the cooling water. Further, the cooling water is circulated through the cathode supplying portion to the first and second cathode, and then returned through the first and second magnet cooling line to the cathode returning portion.

Abstract translation: 目的：用于冷却阴极的装置是简化冷却水的循环系统，从而容易地执行预先防止冷却水的循环缺陷的互锁功能。 构成：在阴极供给部（32）与阴极返回部（34）之间配置多个冷却水流通管。 冷却水流动管道串联设置以形成一个流动管线。 用于检测冷却水压力变化的压力表（52,54）设置在冷却水流动管的供给管（41）和返回管（45）上。 从冷却水供给部供给的冷却水通过加热器块和流量开关流到设备。 流量开关检测冷却水的流量。 此外，冷却水通过阴极供给部分循环到第一和第二阴极，然后通过第一和第二磁体冷却管线返回到阴极返回部分。

公开(公告)号：KR1020050009818A

公开(公告)日：2005-01-26

申请号：KR1020030049061

申请日：2003-07-18

Applicant: 삼성전자주식회사

Inventor： 이성락 ,  조정온 ,  이계춘

IPC: H01L21/68

Abstract: PURPOSE: A wafer holder of semiconductor fabricating equipment is provided to prevent a wafer held by a wafer holder from being broken by uniformly distributing the pressure applied to the wafer. CONSTITUTION: An index plate rotates as a process is carried out. A plurality of process chambers are radially disposed with respect to the center, installed in one side of the index plate. A wafer holder(20) holds a wafer, having a one-to-one correspondence with the plurality of process chambers and installed in a surface of the index plate. A heater table selectively comes in contact with the wafer holder to heat the wafer, installed in the other side of the index plate to have a one-to-one correspondence with the wafer holder. The wafer holder includes a housing(21), a base substrate(29), an elastic unit and a wafer fixing roller(30). An insertion hole of a predetermined size is formed in the center of the housing to load/unload the wafer. The wafer is placed on the base substrate coupled to a side of the housing. The elastic unit interconnects the base substrate and the housing so that the base substrate is elastically coupled to the housing. The wafer fixing roller selectively fixes the wafer placed on the base substrate, mounted on the base substrate.

Abstract translation: 目的：提供半导体制造设备的晶片保持器，以防止通过均匀地分布施加到晶片的压力来破坏由晶片保持器保持的晶片。 构成：索引板随着进行进行而旋转。 多个处理室相对于中心径向设置，安装在索引板的一侧。 晶片保持器（20）保持与多个处理室一一对应的晶片，并安装在折射板的表面上。 加热台选择性地与晶片保持器接触以加热安装在折射板的另一侧的晶片，以与晶片保持器一一对应。 晶片保持器包括壳体（21），基底基板（29），弹性单元和晶片定影辊（30）。 在壳体的中心形成预定尺寸的插入孔，以装载/卸载晶片。 将晶片放置在与壳体的一侧相连的基底基板上。 弹性单元将基底基板和壳体互连，使得基底基板弹性地联接到壳体。 晶片定影辊选择性地固定安装在基底基板上的放置在基底基板上的晶片。

公开(公告)号：KR1020050049695A

公开(公告)日：2005-05-27

申请号：KR1020030083393

申请日：2003-11-22

Applicant: 삼성전자주식회사

Inventor： 한종우 ,  조정온 ,  김영주 ,  이상일 ,  김보현 ,  박태찬

IPC: C23C14/34

CPC classification number: H01J37/3479 ,  G05B19/128

Abstract: 스퍼터링 설비 및 방법은 공정이 진행되는 공간을 갖으며 일측에 공정가스를 공급하는 가스공급관이 설치된 진공챔버와, 진공챔버의 하측에 설치되어 웨이퍼를 안착시키는 웨이퍼 척과, 진공챔버의 측벽을 커버하도록 설치되며 전류가 공급되어 애노드가 되는 쉴드와, 진공챔버의 상측에 설치된 타겟과, 타겟에 결합되며 전류가 공급되는 캐소드와, 쉴드와 상기 캐소드에 전류를 공급하는 전원 및 타겟의 소모정도를 측정하는 타겟소모측정기를 포함한다.

公开(公告)号：KR1020000021233A

公开(公告)日：2000-04-25

申请号：KR1019980040237

申请日：1998-09-28

Applicant: 삼성전자주식회사

Inventor： 조정온

IPC: C23C14/34

CPC classification number: H01J37/3488

Abstract: PURPOSE: A wafer cassette is provided which is heat-resistant to wafer having high temperature after process. CONSTITUTION: The wafer cassette is prepared by (i) positioning loaded wafer in a load rock chamber(2); (ii) transferring the loaded wafer to each process module by rotation of index; (iii) etching the wafer with high frequency at the temperature of 200°C in an etching chamber(4); (iv) pre-heating the wafer in the first sputtering chamber(6) at the temperature of 150°C for 50-60 seconds; (v) depositing metal to the wafer in the second sputtering chamber(8) at the temperature of 150°C about 4,000 angstrom; (vi) depositing metal to the wafer in the third sputtering chamber(8) at the temperature of 300°C about 4,000 angstrom; and (vii) transferring the finished wafer to the cassette by robot arm, wherein the wafer has heat-resistance to 60-70% of the temperature of sputtering chamber in the last process of metal film deposition.

Abstract translation: 目的：提供一种在加工后对具有高温的晶片耐热的晶片盒。 构成：通过以下步骤制备晶片盒：（i）将加载的晶片定位在负载岩石室（2）中; （ii）通过索引旋转将加载的晶片转移到每个处理模块; （iii）在蚀刻室（4）中在200℃的温度下高频蚀刻晶片; （iv）在150℃的温度下将第一溅射室（6）中的晶片预热50-60秒; （v）在150℃约4,000埃的温度下在第二溅射室（8）中的晶片上沉积金属; （vi）在300℃约4,000埃的温度下在第三溅射室（8）中的晶片上沉积金属; 和（vii）通过机械臂将完成的晶片转移到盒，其中在最后的金属膜沉积过程中，晶片具有耐溅射温度达到溅射室温度的60-70％的耐热性。