公开(公告)号：KR1020080073142A

公开(公告)日：2008-08-08

申请号：KR1020070011794

申请日：2007-02-05

Applicant: 삼성전자주식회사

Inventor： 박경배 ,  홍완식 ,  이상윤 ,  권장연 ,  정지심 ,  이성현 ,  조철래

IPC: H01L21/205

CPC classification number: H01L21/02532 ,  H01L21/02422 ,  H01L21/02595 ,  H01L21/0262

Abstract: A method for manufacturing a polycrystalline silicon thin film is provided to improve throughput of a semiconductor device by forming a large sized polycrystalline silicon thin film on a thermally fragile substrate. A polycrystalline silicon thin film is formed on a substrate(10) by using a vapor deposition process at a vapor atmosphere of a silane source(12) containing silane radicals(14). At a first deposition atmosphere(100), a pressure is at between 22 mT and 100 mT and a silane source amount is adjusted to be 5 sccm and 30 sccm. Silane radicals are guided to collide with each other, such that silicon seed particles(20) are formed on the substrate. At a second deposition atmosphere, a pressure is at between 1 mT and 15 mT and a silane source amount is adjusted to be 1 sccm and 13 sccm. The silicon seed particles are grown on the substrate to form the polycrystalline silicon thin film.

Abstract translation: 提供一种制造多晶硅薄膜的方法，以通过在热脆性基板上形成大尺寸多晶硅薄膜来提高半导体器件的生产能力。 通过在含有硅烷自由基（14）的硅烷源（12）的蒸气气氛下进行气相沉积工艺，在基板（10）上形成多晶硅薄膜。 在第一沉积气氛（100）下，压力在22mT至100mT之间，硅烷源量调整为5sccm和30sccm。 引导硅烷基彼此碰撞，使得硅基颗粒（20）形成在基底上。 在第二沉积气氛下，压力在1mT至15mT之间，硅烷源量调节为1sccm和13sccm。 硅基颗粒在衬底上生长以形成多晶硅薄膜。