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Patent Agency Ranking
公开(公告)号：KR100492158B1
公开(公告)日：2005-06-02
申请号：KR1020020072039
申请日：2002-11-19
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01N21/9501 , G01N21/9503
Abstract: 웨이퍼의 표면을 검사하기 위한 장치가 개시되어 있다. 웨이퍼 핸들링 유닛은 웨이퍼를 회전시키고, 수평 및 수직 방향으로 웨이퍼를 이동시킨다. 제1이미지 획득 유닛은 웨이퍼의 상부면 이미지를 획득하며, 제2이미지 획득 유닛은 웨이퍼의 상부면 가장자리, 측면 및 하부면 이미지를 획득한다. 구동 유닛은 제2이미지 획득 유닛이 웨이퍼의 가장자리 부위의 다양한 이미지들을 획득할 수 있도록 제2이미지를 웨이퍼의 가장자리 부위를 중심으로 회전시킨다. 이미지 처리 유닛은 웨이퍼의 다양한 이미지들을 처리하여 웨이퍼의 표면 결함을 검사한다.
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公开(公告)号：KR1020040043741A
公开(公告)日：2004-05-27
申请号：KR1020020072039
申请日：2002-11-19
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01N21/9501 , G01N21/9503
Abstract: PURPOSE: An apparatus for inspecting a wafer is provided to enhance the efficiency and reduce a period of time for an inspection process by using one integrated inspection apparatus to inspect a top face, an edge of the top face, a lateral face, and a bottom face of a wafer. CONSTITUTION: An apparatus for inspecting a wafer includes a handling unit, a first image acquisition unit, a second image acquisition unit, a driving unit, and an image process unit. The handling unit(300) supports and rotates a wafer(W). In addition, the handling unit moves the wafer, horizontally and vertically. The first image acquisition unit(100) acquires an image of a top face of the wafer. The second image acquisition unit(200) acquires an edge image of the top face of the wafer and images of a lateral face and a bottom face of the wafer. The driving unit rotates the second image acquisition unit. The image process unit inspects defects of the wafer.
Abstract translation: 目的：提供一种用于检查晶片的装置，以通过使用一个综合检查装置来检查顶面，顶面的边缘，侧面和底部来提高效率并减少检查过程的时间段 晶圆面。 构成：用于检查晶片的装置包括处理单元，第一图像获取单元，第二图像获取单元，驱动单元和图像处理单元。 处理单元（300）支撑并旋转晶片（W）。 此外，处理单元水平和垂直移动晶片。 第一图像获取单元（100）获取晶片的顶面的图像。 第二图像获取单元（200）获取晶片的顶面的边缘图像和晶片的侧面和底面的图像。 驱动单元旋转第二图像获取单元。 图像处理单元检查晶片的缺陷。
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公开(公告)号：KR1020090062613A
公开(公告)日：2009-06-17
申请号：KR1020070129965
申请日：2007-12-13
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/792 , H01L21/28282 , H01L29/4234 , H01L29/517 , H01L29/66833
Abstract: A nonvolatile memory device and a method for manufacturing the same are provided to obtain uniform distribution by using a silicon nitride film including the metal as a charge trap layer. A gate structure(20) is formed on a semiconductor substrate(10). The gate structure is comprised of a tunnel dielectric layer, a charge trap layer, a blocking dielectric layer and a gate electrode. A source/drain region(12) is formed within the semiconductor substrate of both sides of the gate structure. The charge trap layer is comprised of the nitride film including the metal. The metal is selected among the transition metal. The rate of the transition metal is within the range of 1 to 50% not to lose a nonconductor characteristic of the nitride film. The charge trap layer is made of a titanium silicon nitride film or the tantalum silicon nitride film.
Abstract translation: 提供一种非易失性存储器件及其制造方法，以通过使用包含该金属的氮化硅膜作为电荷陷阱层来获得均匀的分布。 在半导体衬底（10）上形成栅极结构（20）。 栅极结构由隧道介电层，电荷陷阱层，阻挡电介质层和栅电极构成。 源极/漏极区域（12）形成在栅极结构的两侧的半导体衬底内。 电荷陷阱层由包括金属的氮化物膜构成。 在过渡金属中选择金属。 过渡金属的比例在1〜50％的范围内，不会损失氮化膜的非导体特性。 电荷陷阱层由氮化硅钛膜或氮化钽膜制成。
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