公开(公告)号：KR1020040103648A

公开(公告)日：2004-12-09

申请号：KR1020030034702

申请日：2003-05-30

Applicant: 삼성전자주식회사

Inventor： 조정훈 ,  배도인 ,  이태원 ,  하용준 ,  노동현

IPC: H01L21/20

Abstract: PURPOSE: A chuck for supporting a substrate by using a vacuum absorbing method and a thin film deposition apparatus including the same are provided to arrange accurately the semiconductor substrate in the plate by forming a sliding blocking member on an upper surface of the plate. CONSTITUTION: A plate(110) includes a gas channel corresponding to an edge shape of a semiconductor substrate and is used for supporting the semiconductor substrate. A sliding blocking member(130) is used for preventing the sliding of the semiconductor substrate. An edge ring is disposed at a peripheral region of the semiconductor substrate in order not to deposit a predetermined layer on the peripheral region. A stopper(140) is used for maintaining constantly a gap between the edge ring and the semiconductor substrate.

Abstract translation: 目的：提供一种通过使用真空吸附法支撑基板的卡盘和包括该卡盘的薄膜沉积设备，以通过在该板的上表面上形成滑动阻挡件将半导体基板精确地布置在该板中。 构成：板（110）包括与半导体衬底的边缘形状对应的气体通道，并用于支撑半导体衬底。 滑动阻挡构件（130）用于防止半导体衬底的滑动。 边缘环设置在半导体衬底的周边区域，以便不在周边区域上沉积预定层。 使用止动件（140）来保持边缘环和半导体衬底之间的间隙。

公开(公告)号：KR1020020083276A

公开(公告)日：2002-11-02

申请号：KR1020010022713

申请日：2001-04-26

Applicant: 삼성전자주식회사

Inventor： 원제형 ,  박영규 ,  김호식 ,  박주환 ,  하용준

IPC: H01L21/24

Abstract: PURPOSE: A bit line polycide formation method is provided to reduce tensile stress and to restrain haze phenomenon and cracks by using DCS(Diclorosilane)(SiH2Cl2). CONSTITUTION: A lower insulating layer having a landing plug is formed on a semiconductor substrate. A polysilicon layer is deposited on the lower insulating layer. Then, MA(Mono Silane)(SiH4) is flushed. The flushed MA is nucleated to DCS(Dichrolosilane)(SiH2Cl2) by performing a nucleation process. The DSC based silicide layer is deposited on the polysilicon layer. The deposited DSC based silicide layer is then flushed, thereby forming a polycide layer stacked sequentially the polysilicon and the silicide. Then, the polycide layer is annealed.

Abstract translation: 目的：提供一种位线多晶硅化合物形成方法，以减少拉伸应力，并通过使用DCS（二氯硅烷）（SiH 2 Cl 2）抑制雾化现象和裂纹。 构成：在半导体衬底上形成具有着陆塞的下绝缘层。 多晶硅层沉积在下绝缘层上。 然后，将MA（单硅烷）（SiH 4）冲洗。 冲洗的MA通过进行成核过程成核为DCS（二氯硅烷）（SiH 2 Cl 2）。 DSC硅化物层沉积在多晶硅层上。 然后冲洗沉积的基于DSC的硅化物层，从而形成依次层叠多晶硅和硅化物的多晶硅化物层。 然后，将多晶硅化物层退火。