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公开(公告)号：KR1020000026345A
公开(公告)日：2000-05-15
申请号：KR1019980043853
申请日：1998-10-20
Applicant: 삼성전자주식회사
Inventor： 한찬희
IPC: H01L21/205
Abstract: PURPOSE: An assembly combined with a feed through and an outer heater is provided to prevent malfunction of a heater by combining the feed through and the outer heater. CONSTITUTION: An assembly combined with a feed through (50) and an outer heater(40) has the outer heater, a torque preventer, and a graphite nut(46) which are contracted to a split screw(48) in order. The feed through is contracted to the split screw through a pierced hole piercing a center of the split screw. The assembly has a fixer fixing the feed through and the outer heater in the torque preventer. A hole is formed on the torque preventer to see the feed through, and the fixer is contracted to the hole.
Abstract translation: 目的：提供与进料通道和外部加热器结合的组件，以通过组合进料通道和外部加热器来防止加热器的故障。 构成：与进料通过（50）和外部加热器（40）组合的组件具有外部加热器，扭矩防止器和石墨螺母（46），它们按顺序收缩到分离螺杆（48）。 进料通过刺穿分离螺杆中心的穿孔穿过螺丝。 该组件具有固定在扭矩防止器中的进料通道和外部加热器的定影剂。 在转矩防止器上形成一个孔以看到进给通道，定影器收缩到孔中。
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公开(公告)号：KR100252213B1
公开(公告)日：2000-05-01
申请号：KR1019970014954
申请日：1997-04-22
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: H01L28/84 , C23C16/0272 , C23C16/24 , C23C16/4412 , C23C16/455 , C23C16/45578
Abstract: PURPOSE: An apparatus for manufacturing semiconductor devices is provided to be capable of forming a film having an uniform characteristic even when wafers within a collect device are processed in the same position. CONSTITUTION: An apparatus for manufacturing semiconductor devices is a vertical shape structure in which a reaction chamber(60) and a rod lock chamber(50) are coupled by a flange(56). A gate valve(54) for separating both the chambers is installed between the reaction chamber(60) and the rod lock chamber(50). The reaction chamber(60) is a dual tube shape having an exterior tube(66) sealed in a dome shape over the reaction chamber(60) and an inner tube(64) opened upwardly within the reaction chamber(60). A heat block(68) surrounds the exterior tube(66) and functions as a thermal source. A gas supply nozzle(62) for supplying a source gas necessary for reaction is connected at the sidewall of the flange(56) through the inner tube(64). The gas supply nozzle(62) is vertically formed within the inner tube(64).
Abstract translation: 目的：提供一种用于制造半导体器件的装置，即使在收集装置内的晶片处于相同位置时也能够形成具有均匀特性的膜。 构成：用于制造半导体器件的装置是垂直形状结构，其中反应室（60）和杆锁定室（50）通过凸缘（56）联接。 用于分离两个室的闸阀（54）安装在反应室（60）和杆锁定室（50）之间。 反应室（60）是具有在反应室（60）上密封成圆顶形状的外管（66）和在反应室（60）内向上打开的内管（64）的双管形状。 加热块（68）围绕外管（66）并用作热源。 用于供应反应所需的源气体的气体供给喷嘴（62）通过内管（64）连接在凸缘（56）的侧壁处。 气体供给喷嘴（62）垂直地形成在内管（64）内。
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Patent Agency Ranking
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公开(公告)号：KR1020010077274A
公开(公告)日：2001-08-17
申请号：KR1020000004950
申请日：2000-02-01
Applicant: 삼성전자주식회사
IPC: H01L21/316
Abstract: PURPOSE: A method for manufacturing a spin-on-glass(SOG) layer of a semiconductor device is provided to stably control a subsequent process by forming the SOG layer of a predetermined thickness, and to reduce defects by improving a process margin. CONSTITUTION: A density of ozone in a process for manufacturing a spin-on-glass(SOG) layer is uniformly maintained. The ozone density maintains a uniform range in a soft bake process and a spin coating process out of the process for forming the SOG layer. The ozone density can be from zero to 500 parts per million(PPM).
Abstract translation: 目的：提供一种制造半导体器件的旋涂玻璃（SOG）层的方法，通过形成预定厚度的SOG层来稳定地控制后续工艺，并通过改善工艺余量来减少缺陷。 构成：在玻璃（SOG）层的制造工艺中的臭氧密度均匀地保持。 臭氧密度在形成SOG层的过程中在软烘烤过程和旋涂工艺中保持均匀的范围。 臭氧密度可以从零到百万分之一（PPM）。
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