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公开(公告)号：KR1020080001859A
公开(公告)日：2008-01-04
申请号：KR1020060060275
申请日：2006-06-30
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: A portable cleaning apparatus is provided to minimize an interval and a consumed quantity of deionized water for a cleaning process by not requiring the necessity of stopping the entire semiconductor fabricating apparatus. A cleaning solution for independently cleaning a semiconductor fabricating apparatus is stored in a cleaning solution supply part. A cleaning solution supplying pipe(101) and a cleaning solution collecting pipe(102) are detachably coupled to the semiconductor fabricating apparatus and are extended from the cleaning solution supply part. A supply pump supplies a cleaning solution to the semiconductor fabricating apparatus, and is installed in the supply pipe. A cleaning solution sensor(140) detects exhaustion of the cleaning solution and generates a signal for stopping a cleaning process, and is installed in the cleaning solution collecting pipe.
Abstract translation: 提供一种便携式清洁装置，用于通过不需要停止整个半导体制造装置来最小化用于清洁处理的去离子水的间隔和消耗量。 用于独立地清洁半导体制造装置的清洁溶液被存储在清洁溶液供应部分中。 清洁溶液供给管（101）和清洁液收集管（102）可拆卸地联接到半导体制造装置并从清洗溶液供应部分延伸。 供应泵向半导体制造装置提供清洁溶液，并且安装在供给管中。 清洁溶液传感器（140）检测清洗液的耗尽并产生停止清洗处理的信号，并安装在清洗液收集管中。
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公开(公告)号：KR100397174B1
公开(公告)日：2003-09-06
申请号：KR1020020037359
申请日：2002-06-29
Applicant: 삼성전자주식회사
IPC: C09D183/00
CPC classification number: H01L21/76229 , C08G77/62 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/823481 , Y10T428/31663
Abstract: A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula -(SiH 2 NH) n - wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
Abstract translation: 公开了旋涂玻璃（SOG）组合物和使用该SOG组合物形成氧化硅层的方法。 所述方法包括在具有表面不连续性的半导体衬底上涂覆SOG组合物，所述SOG组合物包含具有式 - （SiH 2 SUB NH）n SUB n - 的化合物的全氢聚硅氮烷，其中n代表 正整数，重均分子量在约4,000-8,000的范围内，分子量分散在约3.0-4.0的范围内，以形成平面SOG层。 通过固化SOG层将SOG层转化为具有平面表面的氧化硅层。 还公开了通过该方法制造的半导体器件。
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公开(公告)号：KR1020010027003A
公开(公告)日：2001-04-06
申请号：KR1019990038558
申请日：1999-09-10
Applicant: 삼성전자주식회사
IPC: H01L21/31
Abstract: PURPOSE: A method for fabricating an insulating layer of a semiconductor device is provided to improve a bowing phenomenon of a via contact hole and a crack of a layer, by forming an interlayer dielectric having various etch rates according to a condition of an ion implantation process instead of a conventional curing process. CONSTITUTION: A spin-on-glass(SOG) layer(132) is coated on a substrate having a metal pattern. The SOG layer is soft-baked and a curing process is carried out by an ion implantation process. One of impurities such as B, BF2, F, P, As, C, O, N or Si is used in the ion implantation process, wherein the ion is implanted with a dose of 1E10 - 1E16 atoms/square centimeter and at energy of 10 to 1000 keV.
Abstract translation: 目的：提供一种用于制造半导体器件的绝缘层的方法，以通过根据离子注入过程的条件形成具有各种蚀刻速率的层间电介质来改善通孔接触孔的弯曲现象和层的裂纹 而不是常规的固化过程。 构成：将旋涂玻璃（SOG）层（132）涂覆在具有金属图案的基底上。 SOG层被软烘烤，并且通过离子注入工艺进行固化过程。 在离子注入工艺中使用诸如B，BF 2，F，P，As，C，O，N或Si的杂质之一，其中以1E10-1E16原子/平方厘米的剂量注入离子，并以 10至1000keV。
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公开(公告)号：KR1020020059580A
公开(公告)日：2002-07-13
申请号：KR1020020037359
申请日：2002-06-29
Applicant: 삼성전자주식회사
IPC: C09D183/00
CPC classification number: H01L21/76229 , C08G77/62 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/823481 , Y10T428/31663
Abstract: PURPOSE: A spin-on-glass(SOG) composition is provided, which is used to prepare silicon oxide coating having the smoothness required at the semiconductor device of 256 M and forming no void. CONSTITUTION: The SOG composition comprises 10-30 wt% of perhydropolysilazane which has a structural formula represented by -(SiH2NH)n-(n is a natural number), a mean mass molecular weight of 4,000-8,000, and a distribution of molecular weight of 3.0-4.0; and 70-90 wt% of a solvent. Preferably the solvent is xylene or dibutyl ether. The SOG composition employs perhydropolysilazane with a mean mass molecular weight of 6,000-8,000, when it is used to fill up the trench. The SOG composition employs perhydropolysilazane with a mean mass molecular weight of 4,000-6,000, when it is used to smoothen the gate electrode. The SOG composition employs perhydropolysilazane with a mean mass molecular weight of 4,500-7,500, when it is used to smoothen the metal pattern.
Abstract translation: 目的：提供一种旋涂玻璃（SOG）组合物，用于制备半导体器件所需的平滑度为256 M且不形成空隙的氧化硅涂层。 构成：SOG组合物包含10-30重量％的全氢聚硅氮烷，其具有由 - （SiH 2 NH）n（n是自然数）表示的结构式，平均质量分子量为4,000-8,000，分子量分布 3.0-4.0; 和70-90重量％的溶剂。 优选地，溶剂是二甲苯或二丁醚。 当SOG组合物用于填充沟槽时，采用平均质量分数为6,000-8,000的全氢聚硅氮烷。 当SOG组合物用于平滑栅电极时，采用平均质量分数为4,000-6,000的全氢聚硅氮烷。 当SOG组合物用于平滑金属图案时，使用平均质量分子量为4,500-7,500的全氢聚硅氮烷。
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公开(公告)号：KR1020010077274A
公开(公告)日：2001-08-17
申请号：KR1020000004950
申请日：2000-02-01
Applicant: 삼성전자주식회사
IPC: H01L21/316
Abstract: PURPOSE: A method for manufacturing a spin-on-glass(SOG) layer of a semiconductor device is provided to stably control a subsequent process by forming the SOG layer of a predetermined thickness, and to reduce defects by improving a process margin. CONSTITUTION: A density of ozone in a process for manufacturing a spin-on-glass(SOG) layer is uniformly maintained. The ozone density maintains a uniform range in a soft bake process and a spin coating process out of the process for forming the SOG layer. The ozone density can be from zero to 500 parts per million(PPM).
Abstract translation: 目的：提供一种制造半导体器件的旋涂玻璃（SOG）层的方法，通过形成预定厚度的SOG层来稳定地控制后续工艺，并通过改善工艺余量来减少缺陷。 构成：在玻璃（SOG）层的制造工艺中的臭氧密度均匀地保持。 臭氧密度在形成SOG层的过程中在软烘烤过程和旋涂工艺中保持均匀的范围。 臭氧密度可以从零到百万分之一（PPM）。
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Patent Agency Ranking6.发明授权스핀온글래스 조성물을 이용한 반도체 장치의 산화실리콘막 형성방법 및 이를 이용한 반도체 장치의 소자분리 방법 有权스핀온글래스조성물을이용한반도체장치의산화실리콘막형성방법및이를이용한반도체장치의소자분리방
公开(公告)号：KR100436495B1
公开(公告)日：2004-06-22
申请号：KR1020010031633
申请日：2001-06-07
Applicant: 삼성전자주식회사
IPC: H01L21/316
Abstract: PURPOSE: A method for fabricating a silicon oxide layer of a semiconductor device is provided to fabricate a silicon oxide layer without a void by using spin-on-glass(SOG), and to guarantee stability of dimension by controlling oxidation of silicon in an active region when secondly annealed silicon oxide is densified after SOG composition is transformed to the silicon oxide by the first annealing process. CONSTITUTION: SOG solution including polysilazane whose structural formula is -(SiH2NH)n-(n is a positive integer) is applied to the surface of a semiconductor substrate having a stepped portion to form a flat SOG layer. The SOG layer is firstly annealed to be transformed to an oxide, and the oxide is secondly annealed and densified to form a silicon oxide layer having a flat surface.
Abstract translation: 目的：提供一种用于制造半导体器件的氧化硅层的方法，以通过使用旋涂玻璃（SOG）制造没有空隙的氧化硅层，并且通过控制活性硅中的硅的氧化来保证尺寸的稳定性 当第二退火氧化硅通过第一退火工艺在SOG组合物转变为氧化硅之后致密化时。 构成：将具有结构式为 - （SiH 2 NH）n - （n为正整数）的聚硅氮烷的SOG溶液施加到具有台阶部分的半导体衬底的表面上以形成平坦的SOG层。 SOG层首先退火以转变为氧化物，然后将氧化物退火并致密化以形成具有平坦表面的氧化硅层。
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公开(公告)号：KR1020020024888A
公开(公告)日：2002-04-03
申请号：KR1020000056713
申请日：2000-09-27
Applicant: 삼성전자주식회사
IPC: H01L21/31
Abstract: PURPOSE: A method for forming an SOG(Spin On Glass) layer on a wafer is provided to prevent a rinse error by using an SOG solution including toluene of 3 and less percent. CONSTITUTION: A wafer(200) is loaded on a rotary support plate. An SOG solution injection hole(300) is induced to a front direction of the wafer(200). The SOG solution is dropped from the SOG solution injection hole(300) into the wafer(200). The SOG solution is spread on a surface of the wafer(200) by rotating the wafer(200). An SOG layer(100) is formed on the wafer(200). A rinse nozzle(400) is induced to a rear direction of the wafer(300). The rinse solution is injected to an edge of the wafer(200). The SOG solution is removed from a rear face and a front face of the wafer(200). At this time, A rinse error is reduced by using the SOG solution including toluene of 3 and less percent.
Abstract translation: 目的：提供用于在晶片上形成SOG（旋转玻璃）层的方法，以通过使用包含3％以下甲苯的SOG溶液来防止冲洗误差。 构成：将晶片（200）装载在旋转支撑板上。 SOG溶液注入孔（300）被引导到晶片（200）的前方。 将SOG溶液从SOG溶液注入孔（300）滴入晶片（200）中。 通过旋转晶片（200）将SOG溶液扩散在晶片（200）的表面上。 在晶片（200）上形成SOG层（100）。 冲洗喷嘴（400）被引导到晶片（300）的后方。 将冲洗溶液注入晶片（200）的边缘。 从晶片（200）的后表面和前表面去除SOG溶液。 此时，通过使用包含3％以下甲苯的SOG溶液来降低漂洗误差。
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公开(公告)号：KR1020070040515A
公开(公告)日：2007-04-17
申请号：KR1020050095945
申请日：2005-10-12
Applicant: 삼성전자주식회사
IPC: H01L21/02
Abstract: 분석되는 분석면이 평탄한 시편을 제조하는 방법에 있어서, 우선, 기판을 절단하여 금속 영역 및 비금속 영역으로 이루어진 분석 부위를 포함하는 제1 예비 시편을 형성한다. 상기 제1 예비 시편의 양 측면을 1차 식각하여 돌출된 금속 영역과 함몰된 비금속 영역을 갖는 제2 예비 시편을 형성한다. 상기 함몰된 비금속 영역 상에 식각 방지막을 형성하여, 상기 제2 예비 시편을 2차 식각하여 평탄한 분석면을 갖는 시편을 형성한다. 분석면이 평탄한 시편을 제조함으로써 이후 시편을 분석하는 동안 이미지 왜곡 또는 화질 저하의 문제들을 미연에 방지할 수 있다.
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公开(公告)号：KR100683115B1
公开(公告)日：2007-02-15
申请号：KR1020050048185
申请日：2005-06-07
Applicant: 삼성전자주식회사
Abstract: 투과전자현미경용 시편 및 이의 제조방법은 일측면에 소정의 폭을 가지며 서로 평행한 방향으로 연장하는 다수의 분석 라인들을 갖는 예비 분석 시편을 마련한 후, 상기 예비 분석 시편의 분석 라인면들의 연장 방향과 수직한 방향으로 확장되도록 상기 예비 분석 시편을 연마하여 분석 시편으로 형성한다. 상기 예비 분석시편은 패턴 웨이퍼를 적어도 네 개 구비한다. 따라서 상기 다수의 패턴 웨이퍼를 동시에 분석할 수 있다.
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公开(公告)号：KR1020050116287A
公开(公告)日：2005-12-12
申请号：KR1020040041442
申请日：2004-06-07
Applicant: 삼성전자주식회사
IPC: G02B21/00
Abstract: 본 발명은 반도체 제조 공정용 투과 전자 현미경에서의 다수의 광섬유를 구비하는 바이프리즘 홀더 장치에 관한 것이다. 바이프리즘 홀더 장치는 전자 빔을 이용하여 시료의 불순물 차이에 의한 간섭 무늬(interference fringe)를 발생시키기 위한 다수의 광섬유를 구비하는 바이프리즘과, 바이프리즘을 장착하는 홀더 및 홀더를 통하여 광섬유들로 동일한 정전압을 공급하는 정전압 공급부를 포함한다. 본 발명에 의하면, 다중의 바이프리즘 광섬유를 통하여 시료의 스캐닝 시간을 감소시킴으로써, 광섬유에 가해지는 전압의 변동을 방지할 수 있으며, 정확한 접합 규정(junction define)을 할 수 있다.
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