-
公开(公告)号：KR1020070113096A
公开(公告)日：2007-11-28
申请号：KR1020070001514
申请日：2007-01-05
Applicant: 삼성전자주식회사 , 부경대학교 산학협력단
IPC: H01L21/302
Abstract: An etching, cleaning and drying method using supercritical fluid is provided to eliminate etch byproducts while preventing a lower electrode from collapsing in a process for fabricating a capacitor constituting a memory cell of a DRAM device. A material is formed(S10). The material layer is etched by using supercritical carbon dioxide in which etching chemical is melted(S11). Etch byproducts generated from a reaction of the material layer and the etch chemical are eliminated by using supercritical carbon dioxide in which cleaning chemical is melted(S12). The process for etching the material layer and the process for removing the etch byproducts can be continuously performed in the same process chamber in a critical point of carbon dioxide or higher.
Abstract translation: 提供了使用超临界流体的蚀刻，清洁和干燥方法以消除蚀刻副产物，同时防止在用于制造构成DRAM器件的存储器单元的电容器的制造工艺中下电极塌缩。 形成材料（S10）。 通过使用其中蚀刻化学品熔化的超临界二氧化碳蚀刻材料层（S11）。 通过使用其中清洗化学品熔化的超临界二氧化碳来消除由材料层和蚀刻化学品的反应产生的蚀刻副产物（S12）。 用于蚀刻材料层的方法和用于除去蚀刻副产物的方法可以在二氧化碳或更高的临界点的相同处理室中连续进行。
-
公开(公告)号：KR100837325B1
公开(公告)日：2008-06-11
申请号：KR1020070001514
申请日：2007-01-05
Applicant: 삼성전자주식회사 , 부경대학교 산학협력단
IPC: H01L21/302
Abstract: 초임계 유체를 이용한 식각, 세정 및 건조 방법들 및 이를 위한 챔버 시스템을 제공한다. 이 방법은 식각 약품이 용해된 초임계 이산화탄소를 사용하여 물질막을 식각하는 단계 및 세정 약품이 용해된 초임계 이산화탄소를 사용하여 식각 부산물을 제거하는 단계를 포함한다.
-
公开(公告)号：KR1020080043748A
公开(公告)日：2008-05-19
申请号：KR1020080031852
申请日：2008-04-04
Applicant: 삼성전자주식회사 , 부경대학교 산학협력단
IPC: H01L21/302
Abstract: A drying method using a supercritical fluid is provided to enhance productivity by using high reactivity of the supercritical fluid. A material layer is formed(S30). The material layer is processed by using water-soluble chemicals(S32). A wet-rinse process is performed(S33). The water-soluble chemicals are removed by using a supercritical fluid including a supercritical CO2 and a surface active agent(S34). A flushing process is performed by using the supercritical CO2(S35). The material layer is a silicon oxide layer. The process using the water-soluble chemicals includes a process for dipping the material layer into a chemical material including deionized water and fluorine melted in the deionized water.
Abstract translation: 提供使用超临界流体的干燥方法，以通过使用超临界流体的高反应性来提高生产率。 形成材料层（S30）。 通过使用水溶性化学品处理材料层（S32）。 进行湿式漂洗处理（S33）。 通过使用包括超临界CO 2和表面活性剂的超临界流体（S34）除去水溶性化学物质。 通过使用超临界CO 2进行冲洗处理（S35）。 材料层是氧化硅层。 使用水溶性化学品的方法包括将材料层浸入包括在去离子水中熔融的去离子水和氟的化学材料的方法。
-
-
Search Results
3
records
(took 0.026 seconds)
