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公开(公告)号：KR1020070113096A
公开(公告)日：2007-11-28
申请号：KR1020070001514
申请日：2007-01-05
Applicant: 삼성전자주식회사 , 부경대학교 산학협력단
IPC: H01L21/302
Abstract: An etching, cleaning and drying method using supercritical fluid is provided to eliminate etch byproducts while preventing a lower electrode from collapsing in a process for fabricating a capacitor constituting a memory cell of a DRAM device. A material is formed(S10). The material layer is etched by using supercritical carbon dioxide in which etching chemical is melted(S11). Etch byproducts generated from a reaction of the material layer and the etch chemical are eliminated by using supercritical carbon dioxide in which cleaning chemical is melted(S12). The process for etching the material layer and the process for removing the etch byproducts can be continuously performed in the same process chamber in a critical point of carbon dioxide or higher.
Abstract translation: 提供了使用超临界流体的蚀刻，清洁和干燥方法以消除蚀刻副产物，同时防止在用于制造构成DRAM器件的存储器单元的电容器的制造工艺中下电极塌缩。 形成材料（S10）。 通过使用其中蚀刻化学品熔化的超临界二氧化碳蚀刻材料层（S11）。 通过使用其中清洗化学品熔化的超临界二氧化碳来消除由材料层和蚀刻化学品的反应产生的蚀刻副产物（S12）。 用于蚀刻材料层的方法和用于除去蚀刻副产物的方法可以在二氧化碳或更高的临界点的相同处理室中连续进行。
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公开(公告)号：KR100837325B1
公开(公告)日：2008-06-11
申请号：KR1020070001514
申请日：2007-01-05
Applicant: 삼성전자주식회사 , 부경대학교 산학협력단
IPC: H01L21/302
Abstract: 초임계 유체를 이용한 식각, 세정 및 건조 방법들 및 이를 위한 챔버 시스템을 제공한다. 이 방법은 식각 약품이 용해된 초임계 이산화탄소를 사용하여 물질막을 식각하는 단계 및 세정 약품이 용해된 초임계 이산화탄소를 사용하여 식각 부산물을 제거하는 단계를 포함한다.
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公开(公告)号：KR1020080043748A
公开(公告)日：2008-05-19
申请号：KR1020080031852
申请日：2008-04-04
Applicant: 삼성전자주식회사 , 부경대학교 산학협력단
IPC: H01L21/302
Abstract: A drying method using a supercritical fluid is provided to enhance productivity by using high reactivity of the supercritical fluid. A material layer is formed(S30). The material layer is processed by using water-soluble chemicals(S32). A wet-rinse process is performed(S33). The water-soluble chemicals are removed by using a supercritical fluid including a supercritical CO2 and a surface active agent(S34). A flushing process is performed by using the supercritical CO2(S35). The material layer is a silicon oxide layer. The process using the water-soluble chemicals includes a process for dipping the material layer into a chemical material including deionized water and fluorine melted in the deionized water.
Abstract translation: 提供使用超临界流体的干燥方法，以通过使用超临界流体的高反应性来提高生产率。 形成材料层（S30）。 通过使用水溶性化学品处理材料层（S32）。 进行湿式漂洗处理（S33）。 通过使用包括超临界CO 2和表面活性剂的超临界流体（S34）除去水溶性化学物质。 通过使用超临界CO 2进行冲洗处理（S35）。 材料层是氧化硅层。 使用水溶性化学品的方法包括将材料层浸入包括在去离子水中熔融的去离子水和氟的化学材料的方法。
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公开(公告)号：KR101932035B1
公开(公告)日：2018-12-26
申请号：KR1020120012927
申请日：2012-02-08
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/02
Abstract: 기판 처리용 유체 공급 시스템이 개시된다. 유체 공급 시스템은 건조 유체를 공급하여 기판상에 도포된 린스액을 건조하는 기판 건조부; 상기 기판의 건조과정에서 상기 건조 유체와 상기 린스액이 혼합된 혼합 유체를 상기 기판 건조부로부터 회수하고, 상기 혼합 유체에서 상기 건조 유체를 분리하는 건조 유체 분리부; 및 상기 건조 유체 분리부에서 분리된 상기 건조 유체를 상기 기판 건조부에 재공급하는 건조 유체 공급부를 포함한다.
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公开(公告)号：KR101874901B1
公开(公告)日：2018-07-06
申请号：KR1020110130385
申请日：2011-12-07
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: H01L21/67034 , F26B5/04 , H01L21/02052 , H01L21/67051 , H01L21/6715
Abstract: 기판건조장치가개시된다. 기판건조장치는내부에공간이형성된공정챔버; 상기공정챔버내부에위치하며, 기판을지지하는기판지지부재; 상기공정챔버의내부공간중 상기기판의하부에위치하는공간으로초임계유체를공급하는제1공급포트; 상기공정챔버의내부공간중 상기기판의상부에위치하는공간으로초임계유체를공급하는제2공급포트; 및상기공정챔버내부에머무르는초임계유체를외부로배기하는배기포트를포함한다.
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Patent Agency Ranking
公开(公告)号：KR1020160000388A
公开(公告)日：2016-01-04
申请号：KR1020140103753
申请日：2014-08-11
IPC: C09K13/06 , H01L21/306
CPC classification number: C09K13/08 , C23F1/18 , C23F1/20 , C23F1/26 , H01L21/02063 , H01L21/0273 , H01L21/31111 , H01L21/32134 , H01L21/67017 , H01L21/6708 , H01L21/76802 , H01L24/03 , H01L24/11 , H01L2224/03614 , H01L2224/0401 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2924/04941 , H01L2924/04953 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104
Abstract: 본발명은금속에천트조성물및 이를이용한반도체장치의제조방법을제공한다. 이금속에천트조성물은유기과산화물(Organic Peroxide)을 0.1~20 중량%로; 유기산(Organic Acid)을 0.1~70 중량%로; 그리고알콜계용매를 10~99.8 중량%로포함한다. 이금속에천트조성물은무수계에서적용된다.
Abstract translation: 本发明提供一种金属蚀刻剂组合物和使用其的半导体器件的制造方法。 金属蚀刻剂组合物包含：0.1-20重量％的有机过氧化物; 0.1〜70重量％的有机酸; 和10〜99.8重量％的醇系溶剂。 金属蚀刻剂组合物用于无水体系中。
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公开(公告)号：KR1020150119675A
公开(公告)日：2015-10-26
申请号：KR1020140045382
申请日：2014-04-16
Applicant: 삼성전자주식회사
IPC: C11D7/02 , C11D7/50 , H01L21/306
CPC classification number: C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/5022 , H01L21/02063 , H01L21/02068 , H01L21/02071
Abstract: 금속불화물이용해되지않는유기용매, 바이플루오라이드(HF)를생성하는불소화합물, 및 1.5 중량% 이하의초순수를포함하는세정액조성물및 상기세정액조성물을이용한반도체소자의세정방법이제공된다.
Abstract translation: 本发明提供一种清洗液组合物和使用该清洗液组合物的半导体装置的清洗方法，其特征在于，所述清洗液组合物含有金属氟化物不溶的有机溶剂， 用于产生氟化物的氟化合物（HF 2 - ）; 以及基于清洗液组合物的总重量为1.5重量％以下的超纯水。
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公开(公告)号：KR1020140065771A
公开(公告)日：2014-05-30
申请号：KR1020120132476
申请日：2012-11-21
Applicant: 삼성전자주식회사
IPC: C23F1/30 , H01L21/302
CPC classification number: C09K13/06 , C23F1/26 , H01L21/02074 , H01L21/32134 , H01L21/76865 , H01L21/76883
Abstract: Provided are an etching composition, and a method for manufacturing a semiconductor device using the same. The etching composition comprises 1-7 wt% of hydrogen peroxide, 20-80 wt% of phosphoric acid, 0.001-1 wt% of amine or amide polymer, 0-55 wt% of sulfuric acid, and 10-45 wt% of deionized water. The etching composition is used for etching a metal film. The method for manufacturing a semiconductor device comprises: a step for forming a first metal film on a substrate; a step for forming a second metal film on the first metal film; a step for polishing the first and second metal films; and a step for cleaning the first and second metal films by using a cleaning solution which consists of the etching composition.
Abstract translation: 提供一种蚀刻组合物以及使用其的半导体器件的制造方法。 蚀刻组合物包含1-7重量％的过氧化氢，20-80重量％的磷酸，0.001-1重量％的胺或酰胺聚合物，0-55重量％的硫酸和10-45重量％的去离子 水。 蚀刻组合物用于蚀刻金属膜。 半导体器件的制造方法包括：在基板上形成第一金属膜的工序; 在第一金属膜上形成第二金属膜的步骤; 抛光第一和第二金属膜的步骤; 以及通过使用由蚀刻组合物构成的清洗溶液来清洗第一和第二金属膜的步骤。
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公开(公告)号：KR1020100083629A
公开(公告)日：2010-07-22
申请号：KR1020090003104
申请日：2009-01-14
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/66825 , H01L29/7881 , H01L21/76224
Abstract: PURPOSE: A method for manufacturing a nonvolatile memory device is provided to uniformly form a sidewall profile of a stack structure by using materials with impurity content difference as first and second material films. CONSTITUTION: A first material film(110) and a second material film(120) are alternately laminated on a semiconductor substrate(100). Trenches passing through the first and second material films are formed by performing a first etching process. The second material films exposed to the trench are removed by performing a second etching process. The first and second material layers are made of the material with impurity content difference.
Abstract translation: 目的：提供一种用于制造非易失性存储器件的方法，通过使用具有杂质含量差的材料作为第一和第二材料膜来均匀地形成堆叠结构的侧壁轮廓。 构成：在半导体衬底（100）上交替层叠第一材料膜（110）和第二材料膜（120）。 通过第一和第二材料膜的沟槽通过执行第一蚀刻工艺而形成。 通过进行第二蚀刻工艺去除暴露于沟槽的第二材料膜。 第一和第二材料层由具有杂质含量差异的材料制成。
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公开(公告)号：KR100734330B1
公开(公告)日：2007-07-02
申请号：KR1020060072264
申请日：2006-07-31
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: A method for drying a substrate and an apparatus for performing the same are provided to restrain a water spot and to prevent declination of a fine pattern by using a cleaning liquid containing deionized water and an organic fluoride based compound vapor. A substrate is cleaned by using a cleaning liquid containing deionized water and then rinsed by using a drying agent containing an organic fluoride based compound and alcohol(S10). An organic fluoride based compound vapor is supplied on to the rinsed substrate to form an organic fluoride base compound vapor atmosphere around the substrate, thereby removing the ionized water and the alcohol residing on the substrate(S20).
Abstract translation: 提供了一种用于干燥基板的方法和用于执行该方法的设备，以通过使用含有去离子水和有机氟化物基化合物蒸汽的清洁液来抑制水斑并防止精细图案的倾斜。 通过使用含有去离子水的清洁液来清洁基板，然后通过使用含有机氟化物基化合物和醇的干燥剂进行冲洗（S10）。 将有机氟化物基化合物蒸气供应到漂洗后的基板上以在基板周围形成有机氟化物基化合物蒸气气氛，由此除去沉积在基板上的离子化水和醇（S20）。
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