公开(公告)号：KR1020130056016A

公开(公告)日：2013-05-29

申请号：KR1020110121734

申请日：2011-11-21

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 구지연 ,  손정인 ,  강대준 ,  차승남 ,  뉴엔티홍트랭

IPC: C01G31/00 ,  C30B7/02 ,  B82B3/00 ,  B82Y40/00

Abstract: PURPOSE: A manufacturing method of a sodium vanadate nanowire is provided to simply manufacture a sodium vanadate nanowire in high quality single crystal by controlling the spreading thickness of a precursor solution, heat treatment temperature, and/or time. CONSTITUTION: A manufacturing method of a sodium vanadate nanowire comprises: a step of spreading a solution(20) containing sodium and vanadium on a substrate(30); a step of forming a sodium vanadate crystal core by heat-treating the substrate; and a step of heat-treating the substrate to grow the sodium vanadate nanowire from the sodium vanadate core. The solution contains 1-6 mols of vanadium per 1 mol of sodium. The substrate is an electric conductive substrate or electric nonconductive substrate. The spreading thickness of the solution is 10-1,000nm. The first heat treatment is conducted at 70-130 deg. C and the second heat treatment is conducted at 300-600 deg. C.

Abstract translation: 目的：提供钒酸钠纳米线的制造方法，通过控制前体溶液的铺展厚度，热处理温度和/或时间简单地制造高品质单晶的钒酸钠纳米线。 构成：钒酸钠纳米线的制造方法包括：将含有钠和钒的溶液（20）撒在基材（30）上的步骤; 通过对基材进行热处理形成钒酸钠晶体核心的步骤; 以及对底物进行热处理以从钒酸钠核心生长钒酸钠纳米线的步骤。 该溶液每1mol钠含有1-6摩尔的钒。 衬底是导电衬底或电非导电衬底。 溶液的铺展厚度为10-1000nm。 第一次热处理在70-130度进行。 并且第二热处理在300-600度进行。 C。