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公开(公告)号：KR100847528B1
公开(公告)日：2008-07-22
申请号：KR1020070011518
申请日：2007-02-05
Applicant: 성균관대학교산학협력단
CPC classification number: H03H3/02 , H03H9/02133 , H03H9/105 , H03H9/173 , H03H2003/021
Abstract: A film bulk acoustic resonator and a manufacturing method thereof are provided to improve strength and a resonance frequency property of a support layer by enhancing a coupling property between an electrode and a piezoelectric layer. A film bulk acoustic resonator includes a substrate(100), a support layer(200), a lower aluminum electrode(300), a buffer layer(400), a zinc oxide piezoelectric layer(500), and an upper aluminum electrode(600). The support layer is formed on the substrate. The lower aluminum electrode is formed on the support layer. The buffer layer is formed on the lower aluminum electrode. The zinc oxide piezoelectric layer is formed on the buffer layer. The upper aluminum electrode is formed on the zinc oxide piezoelectric layer.
Abstract translation: 提供一种膜体声波谐振器及其制造方法，用于通过增强电极和压电体层之间的耦合特性来提高支撑层的强度和谐振频率特性。 薄膜体声波谐振器包括基板（100），支撑层（200），下铝电极（300），缓冲层（400），氧化锌压电层（500）和上铝电极（600） ）。 支撑层形成在基板上。 下部铝电极形成在支撑层上。 缓冲层形成在下铝电极上。 氧化锌压电层形成在缓冲层上。 上部铝电极形成在氧化锌压电层上。
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公开(公告)号：KR1020100008555A
公开(公告)日：2010-01-26
申请号：KR1020080069101
申请日：2008-07-16
Applicant: 성균관대학교산학협력단
IPC: H01L41/047
CPC classification number: H01L41/0478 , H01L41/314
Abstract: PURPOSE: A transparent piezoelectric device with high transmittance using an oxide electrode and a method for forming the same are provided to improve transmittance of the transparent piezoelectric device by forming an aluminum nitride film on an oxide bottom electrode. CONSTITUTION: A transparent piezoelectric device includes a substrate(10), an oxide bottom electrode(20), an aluminum nitride film(30), and an oxide top electrode(40). The substrate is a glass or plastic substrate. The oxide bottom electrode is formed on the substrate. The aluminum nitride film is formed on the oxide bottom electrode and has the piezoelectric effect. The oxide top electrode is formed on the aluminum nitride film. The oxide bottom electrode and the oxide top electrode include the aluminum zinc oxide.
Abstract translation: 目的：提供使用氧化物电极具有高透射率的透明压电装置及其形成方法，以通过在氧化物底部电极上形成氮化铝膜来改善透明压电装置的透射率。 构成：透明压电装置包括基板（10），氧化物底电极（20），氮化铝膜（30）和氧化物顶电极（40）。 基板是玻璃或塑料基板。 氧化物底电极形成在基板上。 氮化铝膜形成在氧化物底部电极上并具有压电效应。 氧化物顶部电极形成在氮化铝膜上。 氧化物底部电极和氧化物顶部电极包括氧化铝铝。
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公开(公告)号：KR101011284B1
公开(公告)日：2011-01-28
申请号：KR1020080069101
申请日：2008-07-16
Applicant: 성균관대학교산학협력단
IPC: H01L41/047
Abstract: 투명 압전 소자 및 그 형성방법이 제공된다. 상기 투명 압전 소자는 기판, 상기 기판 상의 산화물 하부 전극, 상기 산화물 하부 전극 상의, 압전 효과를 가지는 알루미늄 질화막(AlN), 및 상기 알루미늄 질화막 상의 산화물 상부 전극을 포함한다.
압전 효과, 투과율, 알루미늄 질화막
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