公开(公告)号：KR101315644B1

公开(公告)日：2013-10-08

申请号：KR1020120074401

申请日：2012-07-09

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  김희석 ,  신종훈 ,  이영석

IPC: H01L31/042 ,  H01L31/18

CPC classification number: Y02E10/50 ,  H01L31/042 ,  H01L31/18

Abstract: PURPOSE: A solar cell and a manufacturing method thereof are provided to reduce the reflectivity of incident light by forming second structures on the surfaces of first structures. CONSTITUTION: First structures are formed on the front surface of a silicon substrate (S110). Second structures are formed on each surface of the first structures (S130). An antireflection layer is formed on the front surface of the silicon substrate with the first and second structures (S150). A first electrode pattern is formed on the upper surface of the antireflection layer (S170). A second electrode pattern is formed on the rear surface of the silicon substrate (S190). [Reference numerals] (AA) Start; (BB) End; (S110) First structures are formed on the front surface of a silicon substrate; (S130) Second structures are formed on each surface of the first structures; (S150) Antireflection layer is formed on the front surface of the silicon substrate; (S170) First electrode pattern is formed on the upper surface of the antireflection layer; (S190) Second electrode pattern is formed on the rear surface of the silicon substrate

Abstract translation: 目的：提供太阳能电池及其制造方法，以通过在第一结构的表面上形成第二结构来减少入射光的反射率。 构成：在硅衬底的前表面上形成第一结构（S110）。 在第一结构的每个表面上形成第二结构（S130）。 在第一和第二结构的硅衬底的前表面上形成防反射层（S150）。 第一电极图案形成在防反射层的上表面上（S170）。 在硅衬底的后表面上形成第二电极图案（S190）。 （附图标记）（AA）开始; （BB）结束; （S110）在硅衬底的前表面上形成第一结构; （S130）在第一结构的每个表面上形成第二结构; （S150）在硅衬底的前表面上形成防反射层; （S170）第一电极图案形成在防反射层的上表面上; （S190）在硅衬底的后表面上形成第二电极图案