公开(公告)号：KR100727371B1

公开(公告)日：2007-06-12

申请号：KR1020060062362

申请日：2006-07-04

Applicant: 성균관대학교산학협력단

Inventor： 임준형 ,  박의철 ,  주진호 ,  정승부 ,  김봉수

IPC: G03F1/00 ,  G03F1/50

Abstract: Provided are a method for manufacturing a metal mask and a metal mask produced thereby using multi-layered photoresist film, which has excellent accuracy and minute pitch when compared to a metal mask produced by conventional process. The method for manufacturing a metal mask comprises the steps of: applying a multi-layered photoresist film onto a conductive substrate(S200,S210); exposing and developing the multi-layered photoresist film sequently via a photolithography process to perform a patterning(S220,S230); forming a metal layer via electroforming(S240); and separating the metal layer from the conductive substrate. The method further comprises the step of removing contaminants from a surface of the conductive substrate prior to the step of applying a multi-layered photoresist film onto a conductive substrate.

Abstract translation: 本发明提供一种使用多层光致抗蚀剂膜制造金属掩模和由其制造的金属掩模的方法，与通过传统方法制造的金属掩模相比，该多层光致抗蚀剂膜具有优异的精度和微小间距。 用于制造金属掩模的方法包括以下步骤：将多层光刻胶膜施加到导电基板上（S200，S210）; 接着经由光刻工艺接着曝光并显影多层光致抗蚀剂膜以执行图案化（S220，S230）; 通过电铸形成金属层（S240）; 以及从导电衬底分离金属层。 该方法还包括在将多层光致抗蚀剂膜施加到导电基底上的步骤之前从导电基底的表面去除污染物的步骤。