公开(公告)号：KR100850495B1

公开(公告)日：2008-08-05

申请号：KR1020070021044

申请日：2007-03-02

Applicant: 성균관대학교산학협력단

Inventor： 홍병유 ,  정일섭 ,  박용섭 ,  서광유 ,  이철우

IPC: H01L29/786

CPC classification number: H01L51/0516 ,  H01L51/0529 ,  H01L51/0545

Abstract: An organic thin film transistor and a manufacturing method thereof are provided to improve insulating characteristics of an organic insulating layer by adding insulating characteristics of a hydrogenated amorphous carbon layer. A gate electrode(200) is formed on a substrate(100). An insulating layer(300) is formed on the gate electrode. A hydrogenated amorphous carbon layer(400) is formed on the insulating layer. An active layer(500) is formed on the hydrogenated amorphous carbon layer. A source electrode(600) and a drain electrode(700) are formed on the active layer. The substrate is a polyimide substrate or a polyestersulfone substrate. The gate electrode is an Au layer. The insulating layer is polyvinylcarbonate or polyvinylphenol.

Abstract translation: 提供一种有机薄膜晶体管及其制造方法，通过添加氢化无定形碳层的绝缘特性来改善有机绝缘层的绝缘特性。 在基板（100）上形成栅电极（200）。 在栅电极上形成绝缘层（300）。 在绝缘层上形成氢化非晶碳层（400）。 在氢化无定形碳层上形成活性层（500）。 源极电极（600）和漏电极（700）形成在有源层上。 基板是聚酰亚胺基板或聚酯砜基板。 栅电极是Au层。 绝缘层是聚碳酸酯或聚乙烯基苯酚。