公开(公告)号：KR1020130133395A

公开(公告)日：2013-12-09

申请号：KR1020120056605

申请日：2012-05-29

Applicant: 성균관대학교산학협력단

Inventor： 김형섭 ,  이명수 ,  안치홍

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/04 ,  G11C13/0004 ,  H01L45/08 ,  H01L45/146

Abstract: The present invention relates to a resistive memory device and a manufacturing method thereof and, more specifically, to a resistive memory device which has characteristics of a resistive switching memory without an electro-forming process by using metal oxides (e.g. HfO2) capable of generating non-grid oxygen ions as a variable resistance layer by heat treatment in an oxygen atmosphere, and a manufacturing method thereof.

Abstract translation: 本发明涉及一种电阻式存储器件及其制造方法，更具体地说，涉及一种电阻式存储器件，该电阻式存储器件具有电阻式开关存储器的特征，而不需要通过使用能产生非线性的金属氧化物（如HfO 2）而进行电铸工艺 通过在氧气氛中热处理作为可变电阻层的二氧化硅的制造方法。