公开(公告)号：KR101437289B1

公开(公告)日：2014-09-02

申请号：KR1020130097958

申请日：2013-08-19

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  김덕진 ,  조형진 ,  박준식 ,  손일융

IPC: B81C1/00 ,  G01N27/00

Abstract: The present invention relates to a method of forming a three-dimensional graphene device by forming graphene on a three-dimensional microstructure a method of producing an electronic device, such as chemical/bio sensors by using the combination of a one-dimensional nanomaterial (nanowire and nanotube) and a zero-dimensional nanowire (nanoparticles and quantum dots). The three-dimensional microstructure is produced by a selective exposure technique of a light-sensitive polymer. The formation of the three-dimensional structure by the adsorption of a two-dimensional material including graphene is possible by the formation of an oxide film and the formation of a self-assembled monolayer. Further, the present invention includes a method of producing the zero-dimensional nanomaterial and the one-dimension nanomaterial on the three-dimensional graphene structure.

Abstract translation: 本发明涉及一种通过在三维微结构上形成石墨烯来形成三维石墨烯装置的方法，该方法通过使用一维纳米材料（纳米线）的组合来生产电子器件，例如化学/生物传感器 和纳米管）和零维纳米线（纳米粒子和量子点）。 通过感光聚合物的选择性曝光技术产生三维微结构。 通过形成氧化膜并形成自组装单层，可以通过吸附包括石墨烯在内的二维材料形成三维结构。 此外，本发明包括在三维石墨烯结构上制造零维纳米材料和一维纳米材料的方法。