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公开(公告)号：KR101881195B1
公开(公告)日：2018-07-23
申请号：KR1020150046254
申请日：2015-04-01
Applicant: 성균관대학교산학협력단
CPC classification number: G01L1/22 , B82Y30/00 , G01L1/2287
Abstract: 나노복합체를이용한변형률감지센서가개시된다. 나노복합체를이용한변형률감지센서는기판; 상기기판상에배치되고, 금속나노와이어들, 제1 폴리머물질및 제2 폴리머물질로이루어진나노복합체층; 및상기나노복합체층상에배치되고제3 폴리머물질로이루어진보호층을포함하고, 상기금속나노와이어들은상기나노복합체층내부에서랜덤하게배치되어있다.
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公开(公告)号：KR101704901B1
公开(公告)日：2017-02-10
申请号：KR1020150059947
申请日：2015-04-28
Applicant: 성균관대학교산학협력단
IPC: G01N27/414 , G01N33/53
Abstract: 전계효과트랜지스터를이용한바이오센서가개시된다. 전계효과트랜지스터를이용한바이오센서는기판; 상기기판상에형성된 2차원물질; 상기기판상에형성되고일부분이상기 2차원물질과전기적으로연결된소스전극; 상기기판상에형성되고상기소스전극과이격된상태로일부분이상기 2차원물질과전기적으로연결된드레인전극; 상기 2차원물질이노출되도록상기 2차원물질의주변을둘러싸는형태로상기기판, 상기소스전극및 상기드레인전극상에형성된절연층; 상기 2차원물질로부터수직한방향을따라상기 2차원물질상에형성된 1차원구조체들; 상기 1차원구조체들표면에각각형성된제1 보호층; 상기제1 보호층표면에배치되고특정항원과반응할수 있는항체; 상기절연층상에형성된제2 보호층; 및상기제2 보호층상에형성되고, 상기 2차원물질및 상기 1차원구조체들이노출될수 있도록상하면이개방되어있으며, 특정항원을포함하는용액을수용할수 있는케이스를포함한다.
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公开(公告)号：KR101131901B1
公开(公告)日：2012-04-03
申请号：KR1020090089239
申请日：2009-09-21
Applicant: 성균관대학교산학협력단
Abstract: 본 발명은 조직공학용 지지체로 사용될 수 있는 그라핀 산화물/생분해성 고분자 나노섬유 복합체 및 이의 제조방법에 관한 것으로, 보다 구체적으로 손상된 조직이나 장기를 치료하기 위해 인체에 주입하여 세포를 배양할 수 있는 조직공학용 지지체로 사용될 수 있는 그라핀 산화물/생분해성 고분자 나노섬유 복합체 및 이의 제조방법에 관한 것이다. 본 발명은 세포의 부착력과 증식력, 생체적합성, 기계적 강도 등의 조직공학용 지지체로 사용되기에 적합한 물성을 갖는 그라핀 산화물/생분해성 고분자 나노섬유 복합체를 제공한다.
그라핀 산화물/생분해성 고분자 나노섬유 복합체, 그라핀, 생분해성 고분자, 조직공학용 지지체, 전기방사법-
公开(公告)号：KR1020110013560A
公开(公告)日：2011-02-09
申请号：KR1020110006033
申请日：2011-01-20
Applicant: 성균관대학교산학협력단
IPC: H01L29/786 , B82Y30/00
CPC classification number: H01L51/0516 , B82Y30/00 , H01L51/0537
Abstract: PURPOSE: An organic pyroelectric functional sensor integrated in a thin film transistor and a manufacturing method thereof are provided to secure high linearity and reliability by introducing a P(VDF-TrFE) layer in an OTFT(Organic Thin-Film Transistor) as a functional gate dielectric layer. CONSTITUTION: An Ni gate electrode(2) is deposited on a film(1) by electroplating. A dielectric layer(3) is formed by coating a P(VDF-TrFE) layer on the Ni gate electrode. A crystalline property is improved by re-crystallizing after dissolving a dielectric layer through annealing. A semiconductor layer(4) is deposited on the dielectric layer. A source and drain electrode(5,6) is deposited on the semiconductor layer.
Abstract translation: 目的：提供集成在薄膜晶体管中的有机热释电功能传感器及其制造方法，以通过在作为功能栅极的OTFT（有机薄膜晶体管）中引入P（VDF-TrFE）层来确保高线性度和可靠性 电介质层。 构成：通过电镀将Ni栅电极（2）沉积在膜（1）上。 通过在Ni栅极上涂覆P（VDF-TrFE）层来形成电介质层（3）。 在通过退火溶解介电层之后通过再结晶来提高结晶性。 半导体层（4）沉积在电介质层上。 源极和漏极（5,6）沉积在半导体层上。
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5.发明公开세포 거동의 실시간 광학적 관찰이 가능한 투명성 세포 기반 센서, 이의 제조방법 및 이를 이용한 다중검출 센서칩 有权基于细胞的传感器，实时观察细胞容量，使用其准备方法和多发性检测传感器芯片
公开(公告)号：KR1020110009643A
公开(公告)日：2011-01-28
申请号：KR1020100071127
申请日：2010-07-22
Applicant: 성균관대학교산학협력단
IPC: G01N27/414 , G01N27/26
CPC classification number: G01N27/4145 , G01N27/414 , G01N27/4146 , G01N33/48735
Abstract: PURPOSE: A transparent cell based sensor for real-time optical observation of cell capacity, a manufacturing method thereof and a multi-detection sensor chip using the same are provided to optically observe the movement of cell in real time and improve the reliability of detection by detecting signals generated from the transparent cell based sensor with an electro-chemical method. CONSTITUTION: A transparent cell based sensor for real-time optical observation of cell capacity comprises an ion selective field effect transistor type sensor(150,160) and an electro-chemical sensor(140) which are formed in parallel to each other on a transparent substrate. Each sensor comprises a transparent drain electrode, a source electrode, a transparent semiconductor layer, a transparent ion sensitivity insulator detection layer and a reference electrode.
Abstract translation: 目的：提供一种用于实时光学观察细胞容量的透明细胞基传感器，其制造方法和使用该细胞容量的多检测传感器芯片，以实时地光学观察细胞的移动并提高检测的可靠性， 用电化学方法检测从基于透明电池的传感器产生的信号。 构成：用于电池容量的实时光学观察的透明电池用传感器包括在透明基板上彼此平行地形成的离子选择场效应晶体管型传感器（150,160）和电化学传感器（140）。 每个传感器包括透明漏电极，源电极，透明半导体层，透明离子敏感绝缘体检测层和参考电极。
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Patent Agency Ranking6.发明公开도금공정을 이용한 플렉시블 유기물 기판 상의 게이트전극제작 방법과, 이를 이용한 유기 반도체 소자 제조 방법 无效使用电镀工艺的有机基板上的门电极的制造方法和使用该方法制造有机半导体器件的方法
公开(公告)号：KR1020080034274A
公开(公告)日：2008-04-21
申请号：KR1020060100275
申请日：2006-10-16
Applicant: 성균관대학교산학협력단
IPC: H01L21/336 , H01L21/288
Abstract: A method of fabricating a gate electrode on an organic substrate using an electroplating process and a Method of fabricating an organic semiconductor device using the same are provided to improve flexibility and electrical property of an organic semiconductor device as a low temperature process by forming an insulating layer and a semiconductor layer as organic materials. A substrate(10) composed of a flexible organic material is provided. An adhesive layer(20) is formed on the substrate. A seed layer(30) for increasing electroplating capability of a gate electrode is formed at the one surface of the adhesive layer. A photoresist is formed on the seed layer. The photoresist is patterned by a mask(50) on which a pattern is formed in advance. A gate electrode is formed on the pattern by using the electroplating or the electroless plating process. The photoresist is removed. The adhesive layer and the seed layer in a region except for gate electrode are removed.
Abstract translation: 提供使用电镀工艺在有机基板上制造栅电极的方法和使用其制造有机半导体器件的方法，以通过形成绝缘层来提高作为低温工艺的有机半导体器件的柔性和电性能 和半导体层作为有机材料。 提供由柔性有机材料构成的基板（10）。 在基板上形成粘合剂层（20）。 在粘合剂层的一个表面上形成用于增加栅电极的电镀能力的籽晶层（30）。 在种子层上形成光致抗蚀剂。 通过预先形成有图案的掩模（50）对光致抗蚀剂进行图案化。 通过使用电镀或化学镀处理，在图案上形成栅电极。 去除光致抗蚀剂。 去除除栅电极之外的区域中的粘合剂层和种子层。
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公开(公告)号：KR1020060118259A
公开(公告)日：2006-11-23
申请号：KR1020050040866
申请日：2005-05-16
Applicant: 성균관대학교산학협력단
IPC: H05B33/10
CPC classification number: H01L51/0018 , H01L21/0279 , H01L21/32136 , H01L51/56 , H01L2924/12044
Abstract: A method for etching a zinc oxide thin film using inductively coupled plasma is provided to improve productivity by processing selective etching for a zinc oxide thin film used as a transparent conductive electrode material based on the inductively coupled plasma. A method for etching a zinc oxide thin film using an inductively coupled plasma includes the steps of: preparing a substrate(28) on which a zinc oxide thin film or a metal-doped zinc oxide thin film is evaporated, and a photoresist for forming a pattern on the zinc oxide thin film is formed; installing the substrate on a side of a chamber which maintains a predetermined pressure; and providing a gas for forming a plasma in the chamber(10) by applying a first RF power to an inductive coil(24) installed on a position confronted with the substrate, and applying a second RF power to the substrate.
Abstract translation: 提供了使用电感耦合等离子体蚀刻氧化锌薄膜的方法，以通过对基于电感耦合等离子体的透明导电电极材料使用的氧化锌薄膜进行选择性蚀刻来提高生产率。 使用电感耦合等离子体蚀刻氧化锌薄膜的方法包括以下步骤：制备在其上蒸发氧化锌薄膜或金属掺杂的氧化锌薄膜的基板（28），以及用于形成 形成氧化锌薄膜上的图案; 将基板安装在保持预定压力的室的一侧上; 以及通过向安装在与所述基板相对的位置的感应线圈（24）施加第一RF功率并且向所述基板施加第二RF功率来提供用于在所述室（10）中形成等离子体的气体。
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公开(公告)号：KR101767607B1
公开(公告)日：2017-08-11
申请号：KR1020150149985
申请日：2015-10-28
Applicant: 성균관대학교산학협력단
IPC: G01N27/414 , B82B3/00 , B82Y15/00 , B82Y30/00
Abstract: 전계효과트랜지스터형바이오센서어레이제조방법이개시된다. 전계효과트랜지스터형바이오센서어레이제조방법은기판상에 2차원나노재료로이루어진채널층을배치하는단계; 상기채널층상에희생층을배치하는단계; 상기희생층상에제1 포토레지스트를배치하고상기제1 포토레지스트를노광하여제1 패턴을형성하는단계; 패터닝된상기제1 포토레지스트를마스크로이용하고상기채널층및 상기희생층을식각하여상기기판상에상기제1 패턴에대응하는복수개의나노재료구조체들을형성하는단계; 상기복수개의나노재료구조체들상에제2 포토레지스트를배치하고상기제2 포토레지스트를노광하여제2 패턴을형성하는단계; 패터닝된상기제2 포토레지스트를마스크로이용하고상기복수개의나노재료구조체의희생층을식각하여상기복수개의나노재료구조체의채널층상에소스전극과드레인전극이각각형성될영역을형성하는단계; 상기복수개의나노재료구조체의채널층상에소스전극과드레인전극을각각형성하는단계; 상기기판, 상기소스전극및 상기드레인전극을각각보호하는보호층을배치하는단계; 및상기보호층을마스크로이용하고상기소스전극과상기드레인전극사이의채널층을노출시키는단계를포함한다.
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公开(公告)号：KR1020160118025A
公开(公告)日：2016-10-11
申请号：KR1020150046254
申请日：2015-04-01
Applicant: 성균관대학교산학협력단
CPC classification number: G01L1/22 , B82Y30/00 , G01L1/2287
Abstract: 나노복합체를이용한변형률감지센서가개시된다. 나노복합체를이용한변형률감지센서는기판; 상기기판상에배치되고, 금속나노와이어들, 제1 폴리머물질및 제2 폴리머물질로이루어진나노복합체층; 및상기나노복합체층상에배치되고제3 폴리머물질로이루어진보호층을포함하고, 상기금속나노와이어들은상기나노복합체층내부에서랜덤하게배치되어있다.
Abstract translation: 提供了一种应变传感器及其制造方法。 应变传感器包括衬底，设置在衬底上的纳米复合层和设置在纳米复合层上的保护层。 纳米复合层包括金属纳米线，第一聚合物材料和第二聚合物材料。 保护层包括第三聚合物材料。 金属纳米线随机排列在纳米复合层中。
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公开(公告)号：KR101437289B1
公开(公告)日：2014-09-02
申请号：KR1020130097958
申请日：2013-08-19
Applicant: 성균관대학교산학협력단
Abstract: The present invention relates to a method of forming a three-dimensional graphene device by forming graphene on a three-dimensional microstructure a method of producing an electronic device, such as chemical/bio sensors by using the combination of a one-dimensional nanomaterial (nanowire and nanotube) and a zero-dimensional nanowire (nanoparticles and quantum dots). The three-dimensional microstructure is produced by a selective exposure technique of a light-sensitive polymer. The formation of the three-dimensional structure by the adsorption of a two-dimensional material including graphene is possible by the formation of an oxide film and the formation of a self-assembled monolayer. Further, the present invention includes a method of producing the zero-dimensional nanomaterial and the one-dimension nanomaterial on the three-dimensional graphene structure.
Abstract translation: 本发明涉及一种通过在三维微结构上形成石墨烯来形成三维石墨烯装置的方法，该方法通过使用一维纳米材料（纳米线）的组合来生产电子器件，例如化学/生物传感器 和纳米管）和零维纳米线（纳米粒子和量子点）。 通过感光聚合物的选择性曝光技术产生三维微结构。 通过形成氧化膜并形成自组装单层，可以通过吸附包括石墨烯在内的二维材料形成三维结构。 此外，本发明包括在三维石墨烯结构上制造零维纳米材料和一维纳米材料的方法。
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