公开(公告)号：KR1020120090380A

公开(公告)日：2012-08-17

申请号：KR1020110010760

申请日：2011-02-07

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  허욱

IPC: H01L51/40 ,  H01L51/30

CPC classification number: H01L51/107 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228

Abstract: PURPOSE: A method for manufacturing a multilayer sealing film and a method for manufacturing a flexible organic semiconductor device using the same are provided to improve flexibility by mixing plasma enhanced chemical vapor deposition method and a atomic layer deposition method. CONSTITUTION: An organic layer(60) is evaporated to a thin film with a plasma enhanced chemical vapor deposition method. The material of the organic layer is methyl cyclohexane, hexafluoropropylene, fluorocarbon or poly tetra-fluro ethylene. An inorganic layer(70) is evaporated to a thin film with an atomic layer deposition method. The material of the inorganic layer is selected in a group consisting of Al2O3, SiO2, Si3N4, TiO2, and Ta2O5. The thickness of the inorganic layer is less than or equal to 200nm.

Abstract translation: 目的：提供一种多层密封膜的制造方法和使用其的柔性有机半导体器件的制造方法，其通过混合等离子体增强化学气相沉积法和原子层沉积法来提高柔性。 构成：用等离子体增强化学气相沉积法将有机层（60）蒸发成薄膜。 有机层的材料是甲基环己烷，六氟丙烯，碳氟化合物或聚四氟乙烯。 用原子层沉积法将无机层（70）蒸发成薄膜。 无机层的材料选自由Al2O3，SiO2，Si3N4，TiO2和Ta2O5组成的组。 无机层的厚度小于或等于200nm。

公开(公告)号：KR101207209B1

公开(公告)日：2012-12-03

申请号：KR1020110010760

申请日：2011-02-07

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  허욱

IPC: H01L51/40 ,  H01L51/30

Abstract: 본발명은제1 유기층/무기층/제2 유기층이차례로적층된다층봉지막의제조방법, 이를포함하는플렉시블유기반도체소자및 그제조방법에관한것으로서, 본발명의다층봉지막의유기층은플라즈마보강화학기상증착법(Plasma Enhanced Chemical Vapor Deposition)에의해박막으로증착되고, 무기층은원자층증착법(Atomic Layer Deposition)에의해박막으로증착되는것을특징으로한다. 본발명에따라플라즈마보강화학기상증착법과원자층증착법을조합사용하여제조된다층봉지막은유연성이뛰어나고, 이러한다층봉지막으로밀봉된플렉시블유기반도체소자는공기중의수분이나산소로부터안정적인전기적특성을가지는동시에굽힘강도등의기계적특성이매우우수하다.