公开(公告)号：KR1020080034274A

公开(公告)日：2008-04-21

申请号：KR1020060100275

申请日：2006-10-16

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  이재근

IPC: H01L21/336 ,  H01L21/288

Abstract: A method of fabricating a gate electrode on an organic substrate using an electroplating process and a Method of fabricating an organic semiconductor device using the same are provided to improve flexibility and electrical property of an organic semiconductor device as a low temperature process by forming an insulating layer and a semiconductor layer as organic materials. A substrate(10) composed of a flexible organic material is provided. An adhesive layer(20) is formed on the substrate. A seed layer(30) for increasing electroplating capability of a gate electrode is formed at the one surface of the adhesive layer. A photoresist is formed on the seed layer. The photoresist is patterned by a mask(50) on which a pattern is formed in advance. A gate electrode is formed on the pattern by using the electroplating or the electroless plating process. The photoresist is removed. The adhesive layer and the seed layer in a region except for gate electrode are removed.

Abstract translation: 提供使用电镀工艺在有机基板上制造栅电极的方法和使用其制造有机半导体器件的方法，以通过形成绝缘层来提高作为低温工艺的有机半导体器件的柔性和电性能 和半导体层作为有机材料。 提供由柔性有机材料构成的基板（10）。 在基板上形成粘合剂层（20）。 在粘合剂层的一个表面上形成用于增加栅电极的电镀能力的籽晶层（30）。 在种子层上形成光致抗蚀剂。 通过预先形成有图案的掩模（50）对光致抗蚀剂进行图案化。 通过使用电镀或化学镀处理，在图案上形成栅电极。 去除光致抗蚀剂。 去除除栅电极之外的区域中的粘合剂层和种子层。

公开(公告)号：KR1020120090380A

公开(公告)日：2012-08-17

申请号：KR1020110010760

申请日：2011-02-07

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  허욱

IPC: H01L51/40 ,  H01L51/30

CPC classification number: H01L51/107 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228

Abstract: PURPOSE: A method for manufacturing a multilayer sealing film and a method for manufacturing a flexible organic semiconductor device using the same are provided to improve flexibility by mixing plasma enhanced chemical vapor deposition method and a atomic layer deposition method. CONSTITUTION: An organic layer(60) is evaporated to a thin film with a plasma enhanced chemical vapor deposition method. The material of the organic layer is methyl cyclohexane, hexafluoropropylene, fluorocarbon or poly tetra-fluro ethylene. An inorganic layer(70) is evaporated to a thin film with an atomic layer deposition method. The material of the inorganic layer is selected in a group consisting of Al2O3, SiO2, Si3N4, TiO2, and Ta2O5. The thickness of the inorganic layer is less than or equal to 200nm.

Abstract translation: 目的：提供一种多层密封膜的制造方法和使用其的柔性有机半导体器件的制造方法，其通过混合等离子体增强化学气相沉积法和原子层沉积法来提高柔性。 构成：用等离子体增强化学气相沉积法将有机层（60）蒸发成薄膜。 有机层的材料是甲基环己烷，六氟丙烯，碳氟化合物或聚四氟乙烯。 用原子层沉积法将无机层（70）蒸发成薄膜。 无机层的材料选自由Al2O3，SiO2，Si3N4，TiO2和Ta2O5组成的组。 无机层的厚度小于或等于200nm。

公开(公告)号：KR100862149B1

公开(公告)日：2008-10-09

申请号：KR1020070034544

申请日：2007-04-09

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  김주환 ,  설영국

IPC: C23C18/16 ,  C23C18/54

Abstract: 본 발명은 선택적 무전해 도금을 이용한 플렉서블 기판의 미세 금속 배선 공정에 관한 것으로, 보다 구체적으로 플렉서블(flexible)한 유기물 기판을 플라즈마 표면처리 후, 선택적 무전해도금 공정 또는 선택적 무전해 도금 후 전해도금 공정을 이용하여 상기 기판 상에 니켈, 구리 및 금으로 구성된 군으로부터 선택된 금속 배선을 형성시키는 방법에 관한 것이다.
본 발명의 방법은 플라즈마 표면 처리 공정 및 무전해 도금 공정에 의해 플렉서블한 기판 상에 금속 배선을 형성하므로써, 유기물 기판과 금속 배선 간의 접착력을 향상시키고, 고종횡비를 가지면서 미세하고 선택적인 금속 배선을 형성시킬 수 있으며, 플랙서블한 소자에 저가로 적용가능하다.

公开(公告)号：KR100882722B1

公开(公告)日：2009-02-06

申请号：KR1020070017165

申请日：2007-02-20

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  안진호 ,  이상설

IPC: H01L21/336 ,  H01L21/205

Abstract: 플렉시블 유기물 기판의 도금 공정을 이용한 게이트 전극의 형성 방법과, 게이트 절연체층으로는 유/무기 다층 절연체층을 적용하고 이를 이용하여 플렉시블 전자 소자에 적용할 수 있는 바닥 게이트(Bottom Gate)의 인버티드 스테거(Inverted Staggered) 구조의 유기/무기 다층 게이트 절연체 제조방법이 개시된다. 그 제조방법은 폴리이미드와 함께 이루어진 플렉시블 유기물 기판을 구비하고, 상기 플렉시블 유기물 기판 위에 니켈(Ni)이나 다른 전도성 전극을 플라즈마 표면 처리를 통하여 플렉시블 유기물 기판 위에 형성하고 유기/무기 다층 게이트 절연체를 스핀코팅과 원자층 증착법을 이용하여 형성한다.
플렉시블, 유기물 기판, 스핀코팅, 원자층 증착법, 유기/무기 다층 절연체, 유기 반도체 소자.

公开(公告)号：KR100855449B1

公开(公告)日：2008-09-01

申请号：KR1020070030775

申请日：2007-03-29

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  배진영 ,  박상호

IPC: H01L29/786

CPC classification number: H01L51/105 ,  H01L51/0558

Abstract: A method for fabricating a flexible organic semiconductor device using a multi-functional organic interlayer is provided to improve contact resistance between a source-drain metal electrode and an organic semiconductor. A surface of a substrate(10) including a flexible organic material is processed. An adhesive layer(20) is formed on the surface-processed substrate. A seed layer(30) is formed on one surface of the adhesive layer. A photoresist layer is formed on the seed layer. The photoresist layer is patterned by using a mask having a pattern. A metal gate electrode layer is formed on the pattern of the photoresist layer. The photoresist layer is removed. The adhesive layer and the seed layer are removed from the residual region except for the metal gate electrode layer. An organic insulator layer(70) is formed on one surface of the metal gate electrode layer. An organic semiconductor layer(80) is formed on one surface of the organic insulator layer. A multi-functional organic interlayer(100) is formed on one surface of the organic semiconductor layer. A source-drain electrode layer(90) is formed on one surface of the multi-functional organic interlayer.

Abstract translation: 提供一种使用多功能有机中间层制造柔性有机半导体器件的方法，以提高源极 - 漏极金属电极和有机半导体之间的接触电阻。 处理包括柔性有机材料的基板（10）的表面。 在表面处理基板上形成粘接层（20）。 种子层（30）形成在粘合剂层的一个表面上。 在种子层上形成光致抗蚀剂层。 通过使用具有图案的掩模来对抗蚀剂层进行图案化。 在光致抗蚀剂层的图案上形成金属栅电极层。 去除光致抗蚀剂层。 除了金属栅极电极层之外的残留区域除去粘合剂层和种子层。 在金属栅极电极层的一个表面上形成有机绝缘体层（70）。 在有机绝缘体层的一个表面上形成有机半导体层（80）。 在有机半导体层的一个表面上形成多功能有机中间层（100）。 源极 - 漏极电极层（90）形成在多功能有机中间层的一个表面上。

公开(公告)号：KR1020080077517A

公开(公告)日：2008-08-25

申请号：KR1020070017165

申请日：2007-02-20

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  안진호 ,  이상설

IPC: H01L21/336 ,  H01L21/205

Abstract: A method for manufacturing an organic/inorganic multi layer gate insulator and a method for manufacturing an organic semiconductor using the same are provided to improve low leakage current characteristics on a flexible organic substrate by using spin coating and atomic layer deposition. Method for manufacturing an organic/inorganic multi layer insulator includes the steps of preparing a flexible organic substrate of polyimide, forming conductive metal including nickel, copper and gold on the flexible organic substrate by using electroplating or electroless-plating, and forming an organic/inorganic multi layer gate insulator on the flexible organic substrate by using spin coating and atomic layer deposition.

Abstract translation: 提供一种制造有机/无机多层栅极绝缘体的方法和使用该方法制造有机半导体的方法，以通过使用旋涂和原子层沉积来改善柔性有机基板上的低漏电流特性。 制造有机/无机多层绝缘体的方法包括以下步骤：通过使用电镀或无电镀在柔性有机基板上形成聚酰亚胺的柔性有机基板，形成包括镍，铜和金的导电金属，并形成有机/无机多层绝缘体 通过使用旋涂和原子层沉积在柔性有机基板上的多层栅极绝缘体。

公开(公告)号：KR1020080073617A

公开(公告)日：2008-08-11

申请号：KR1020070034544

申请日：2007-04-09

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  김주환 ,  설영국

IPC: C23C18/16 ,  C23C18/54

Abstract: A method for forming a fine metal wiring on a flexible substrate by selective electroless plating is provided to form the metal wiring, using a plasma surface process or the electroless plating so as to improve bonding ability between an organic substrate and the metal wiring and to form the metal wiring selectively. A method for forming a fine metal wiring(5) on a flexible organic substrate(1) by selective electroless plating comprises the steps of; providing the flexible organic substrate; forming a photosensitive insulator(3) on the substrate; patterning the photosensitive insulator, using an optical mask having a pattern(13); processing a plasma surface on one surface of the substrate(14); transferring an adsorption preventing film of a catalyst on the photosensitive insulator selectively; and forming the metal wiring, using an electroless plating or electroplating process. An inorganic thin film(12) is formed on the substrate.

Abstract translation: 提供通过选择性化学镀在柔性基板上形成精细金属布线的方法，以使用等离子体表面处理或无电解电镀形成金属布线，从而提高有机基板与金属布线之间的接合能力，形成 选择性地选择金属布线。 通过选择性无电镀在柔性有机基板（1）上形成精细金属布线（5）的方法包括以下步骤： 提供柔性有机基材; 在基板上形成感光绝缘体（3）; 使用具有图案（13）的光学掩模来图案化感光绝缘体; 在衬底（14）的一个表面上处理等离子体表面; 选择性地在感光绝缘体上转移催化剂的吸附防止膜; 并使用化学镀或电镀工艺形成金属布线。 在基板上形成无机薄膜（12）。

公开(公告)号：KR101207209B1

公开(公告)日：2012-12-03

申请号：KR1020110010760

申请日：2011-02-07

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  허욱

IPC: H01L51/40 ,  H01L51/30

Abstract: 본발명은제1 유기층/무기층/제2 유기층이차례로적층된다층봉지막의제조방법, 이를포함하는플렉시블유기반도체소자및 그제조방법에관한것으로서, 본발명의다층봉지막의유기층은플라즈마보강화학기상증착법(Plasma Enhanced Chemical Vapor Deposition)에의해박막으로증착되고, 무기층은원자층증착법(Atomic Layer Deposition)에의해박막으로증착되는것을특징으로한다. 본발명에따라플라즈마보강화학기상증착법과원자층증착법을조합사용하여제조된다층봉지막은유연성이뛰어나고, 이러한다층봉지막으로밀봉된플렉시블유기반도체소자는공기중의수분이나산소로부터안정적인전기적특성을가지는동시에굽힘강도등의기계적특성이매우우수하다.

公开(公告)号：KR100878872B1

公开(公告)日：2009-01-15

申请号：KR1020070089029

申请日：2007-09-03

Applicant: 성균관대학교산학협력단

Inventor： 홍병유 ,  박용섭 ,  최원석 ,  이내응 ,  설영국 ,  노화영

IPC: H01L29/786 ,  B82Y30/00

CPC classification number: H01L51/102 ,  H01L51/0541 ,  Y10S977/742 ,  Y10S977/832 ,  Y10S977/938 ,  H01L51/055

Abstract: An organic thin film transistor, manufacturing method thereof, and organic semiconductor device including the same are provided to improve device property and manufacturing process of thin film transistor by forming gate electrode of thin film transistor using nano crystalline conductive carbon layer. A flexible substrate is prepared. A nano crystalline carbon layer(310) is deposited on the flexible substrate as a gate electrode. An organic insulation layer(320) is formed on the flexible substrate on which the gate electrode is deposited. An organic active layer is activated on the organic insulation layer. Source/drain electrodes are formed on the organic active layer. The nano crystalline carbon layer is deposited using an asymmetry magnetron sputtering method. The organic insulation layer is formed by one among polyvinyl phenol and polyvinyl alcohol.

Abstract translation: 提供有机薄膜晶体管及其制造方法以及包括该有机薄膜晶体管的有机半导体器件，以通过使用纳米结晶导电碳层形成薄膜晶体管的栅电极来改善薄膜晶体管的器件特性和制造工艺。 制备柔性基底。 纳米结晶碳层（310）作为栅电极沉积在柔性基板上。 在其上沉积有栅电极的柔性基板上形成有机绝缘层（320）。 在有机绝缘层上激活有机活性层。 在有机活性层上形成源极/漏极。 使用不对称磁控溅射法沉积纳米晶体碳层。 有机绝缘层由聚乙烯苯酚和聚乙烯醇之一形成。

公开(公告)号：KR100878225B1

公开(公告)日：2009-01-13

申请号：KR1020070078667

申请日：2007-08-06

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  노화영 ,  설영국 ,  김선일

IPC: H01L51/30 ,  B82Y30/00

Abstract: An organic semiconductor device comprising organic-inorganic nano-composite dielectric layer is provided to realize excellent flexibility, low leakage current, high dielectric constant by using the organic-inorganic nano complex insulating layer. In an organic semiconductor device, a seed layer(30) is formed at the upper part of the substrate(10). A gate electrode(50) is formed on the seed layer. An organic-inorganic nano complex insulating layer(60) is formed on the substrate in which the gate electrode is formed. An organic semiconductor layer(70) is formed on the dielectric layer, and a source/drain electrode layer(80) is formed. The inorganic oxide dispersion solution is manufactured by mixing the inorganic oxide nano particle with the acid solvent and coupling agent. An organic-inorganic oxides nano composite solution is manufactured by mixing the inorganic oxide dispersion solution with the organic compound insulator. The organic-inorganic oxide cargo nano composite solution is coated on substrate.

Abstract translation: 提供有机无机纳米复合电介质层的有机半导体器件，通过使用有机 - 无机纳米复合绝缘层实现优异的柔性，低漏电流，高介电常数。 在有机半导体装置中，在基板（10）的上部形成种子层（30）。 在种子层上形成栅电极（50）。 在形成有栅电极的基板上形成有机 - 无机纳米复合绝缘层（60）。 在电介质层上形成有机半导体层（70），形成源极/漏极层（80）。 无机氧化物分散液通过将无机氧化物纳米粒子与酸性溶剂和偶联剂混合来制造。 通过将无机氧化物分散液与有机化合物绝缘体混合来制造有机 - 无机氧化物纳米复合物溶液。 将有机 - 无机氧化物载体纳米复合物溶液涂覆在基材上。