公开(公告)号：KR1020080012236A

公开(公告)日：2008-02-11

申请号：KR1020070077560

申请日：2007-08-01

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 히로타리유 ,  모토키겐사쿠 ,  나카하타세이지 ,  오카히사다쿠지 ,  유에마츠고지

IPC: H01L21/20

CPC classification number: C30B29/406 ,  C30B25/183

Abstract: A method for growing a gallium nitride crystal is provided to fabricate a low-defect gallium nitride substrate for fabricating a high-quality laser device by fabricating a laser device in a portion of a low-defect region. A mask(M) is partially formed on a basic substrate(U) to avoid an epitaxial growth of a crystal. A crystal is epitaxially grown on the basic substrate having the mask by a vapor phase method. In the epitaxial growth, a crystal growth is formed by a first growth condition indicated by (a1/T+b1)

Abstract translation: 提供一种用于生长氮化镓晶体的方法，以通过在低缺陷区域的一部分制造激光器件来制造用于制造高质量激光器件的低缺陷氮化镓衬底。 掩模（M）部分地形成在基底衬底（U）上以避免晶体的外延生长。 通过气相法在具有掩模的碱性基材上外延生长晶体。 在外延生长中，通过由（a1 / T + b1）