公开(公告)号：KR1020090006097A

公开(公告)日：2009-01-14

申请号：KR1020087025440

申请日：2006-03-20

Applicant: 에스티마이크로일렉트로닉스 에스.알.엘.

Inventor： 로란디,파올로 ,  칼리가로,크리스티아노 ,  파스쿠치,루이기

IPC: H01L21/822 ,  H01L27/115 ,  H01L27/06 ,  H01L29/78

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L21/8213 ,  H01L27/0688 ,  H01L27/1052 ,  H01L27/1203 ,  H01L29/7832

Abstract: Semiconductor device (1; 38, 48) formed by a first conductive strip (10) of semiconductor material; a control gate region (7; 35; 55) of semiconductor material, facing a channel portion (5c) of the first conductive strip,-and an insulation region (6; 32; 52) arranged between the first conductive strip and the control gate region. The first conductive strip (10) includes a conduction line (5) having a first conductivity type and a control line (4) having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line (5) forms the channel portion (5c), a first conduction portion (5a) and a second conduction portion (5b) arranged on opposite sides of the channel portion.

Abstract translation: 由半导体材料的第一导电条（10）形成的半导体器件（1; 38,48） 面对第一导电条的沟道部分（5c）的半导体材料的控制栅极区域（7; 35; 55）和布置在第一导电条和控制栅极之间的绝缘区域（6; 32; 52） 地区。 第一导电条（10）包括具有第一导电类型的导线（5）和具有第二导电类型的控制线（4），彼此相邻并且彼此电接触，导线（5）形成 通道部分（5c），布置在通道部分的相对侧上的第一导电部分（5a）和第二导电部分（5b）。