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公开(公告)号：KR101607938B1
公开(公告)日：2016-04-01
申请号：KR1020130078509
申请日：2013-07-04
Applicant: 연세대학교 산학협력단 , 성균관대학교산학협력단
IPC: G01N27/406 , G01N27/414 , G01N33/483
Abstract: 본발명은바이오센서및 그를제조하는제조방법에관한것이다. 본발명의일 실시예에따른바이오센서는, 기판; 상기기판위에형성된게이트; 상기게이트위에형성된게이트절연층; 상기게이트절연층 위에적층된다수의산화물반도체층; 및상기산화물반도체층 위에형성된소스및 드레인;을포함할수 있다.
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公开(公告)号：KR1020130102148A
公开(公告)日：2013-09-17
申请号：KR1020120023122
申请日：2012-03-07
Applicant: 연세대학교 산학협력단 , 성균관대학교산학협력단
IPC: G01N33/53 , C12Q1/68 , G01N27/414
CPC classification number: C12Q1/6825 , G01N27/4145
Abstract: PURPOSE: An oxide thin film transistor biosensor is provided to show reliability and reproducibility, superior resistance to environmental stress and heat, and superior electrical characteristics. CONSTITUTION: A field effect transistor comprises: a substrate (200); a gate electrode (210) which is formed on the substrate; a gate insulation film (220) which is formed on the gate electrode; an oxide semiconductor layer (230) which is formed on the gate insulation film; and a source (240) and a drain electrode (250) which are formed on the oxide semiconductor layer to expose the oxide semiconductor layer. A field effect transistor biosensor detects components of a biomaterial (260) through current-voltage characteristics by bonding the biomaterial to a part of the oxide semiconductor layer which is exposed between the source and the drain electrode.
Abstract translation: 目的：提供氧化物薄膜晶体管生物传感器，以显示可靠性和再现性，优异的耐环境应力和热性，以及优异的电气特性。 构成：场效应晶体管包括：衬底（200）; 形成在所述基板上的栅电极（210） 栅极绝缘膜（220），其形成在栅电极上; 形成在所述栅极绝缘膜上的氧化物半导体层（230） 以及形成在所述氧化物半导体层上以暴露所述氧化物半导体层的源极（240）和漏极（250）。 场效应晶体管生物传感器通过将生物材料结合到暴露在源极和漏极之间的氧化物半导体层的一部分，通过电流 - 电压特性来检测生物材料（260）的成分。
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公开(公告)号：KR1020150005772A
公开(公告)日：2015-01-15
申请号：KR1020130078509
申请日：2013-07-04
Applicant: 연세대학교 산학협력단 , 성균관대학교산학협력단
IPC: G01N27/406 , G01N27/414 , G01N33/483
CPC classification number: G01N27/406 , G01N27/414 , G01N33/483
Abstract: 본 발명은 바이오 센서 및 그를 제조하는 제조 방법에 관한 것이다. 본 발명의 일 실시예에 따른 바이오 센서는, 기판; 상기 기판 위에 형성된 게이트; 상기 게이트 위에 형성된 게이트 절연 층; 상기 게이트 절연 층 위에 적층된 다수의 산화물 반도체 층; 및 상기 산화물 반도체 층 위에 형성된 소스 및 드레인;을 포함할 수 있다.
Abstract translation: 本发明涉及生物传感器和生物传感器的制造方法。 根据本发明的实施例，生物传感器包括：基底; 形成在基板上的栅极; 形成在栅极上的栅极绝缘层; 堆叠在栅极绝缘层上的多个氧化物半导体层; 以及形成在氧化物半导体层上的源极和漏极。
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公开(公告)号：KR101361054B1
公开(公告)日：2014-02-12
申请号：KR1020110089180
申请日：2011-09-02
Applicant: 연세대학교 산학협력단
IPC: H01L21/20 , H01L29/786 , H01L21/336
CPC classification number: H01L21/08 , H01B1/08 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628
Abstract: 본 발명의 일 실시예에 따른 산화물 박막 제조방법은 (a) 전구체 물질과 과산화물질을 혼합하여 전구체 용액을 형성하는 단계, (b) 상기 전구체 용액을 기판 위에 도포하는 단계, (c) 상기 기판을 열처리하는 단계를 포함한다.
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公开(公告)号：KR101254431B1
公开(公告)日：2013-04-12
申请号：KR1020110064766
申请日：2011-06-30
Applicant: 연세대학교 산학협력단
CPC classification number: Y02E10/549 , Y02P70/521
Abstract: 본 발명은 용액 공정을 이용한 니켈 산화물 박막의 형성 방법과 상기 방법으로 형성된 니켈 산화물층을 포함하는 유기 태양전지의 제작 공정에 관한 것으로써,
특히 니켈 산화물 박막을 유기 태양전지의 버퍼층으로 도입하여,
기존의 유기 태양전지의 장점인 공정의 편이성을 잃지 않으면서도,
유기 태양전지의 특성을 향상하고 안정성을 확보하는 것을 목표로 한다.-
Patent Agency Ranking
公开(公告)号：KR1020130025703A
公开(公告)日：2013-03-12
申请号：KR1020110089180
申请日：2011-09-02
Applicant: 연세대학교 산학협력단
IPC: H01L21/20 , H01L29/786 , H01L21/336
CPC classification number: H01L21/08 , H01B1/08 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L21/288
Abstract: PURPOSE: A composition for forming an oxide thin film, a method for manufacturing the oxide thin film, and a method for manufacturing a thin film transistor are provided to control an electric property of the oxide thin film by controlling the amount of light energy and/or the density of oxygenated water in precursor solutions. CONSTITUTION: Precursor solutions are made by mixing precursor materials with oxygenated materials(S110). The precursor solutions are coated on a substrate(S120). The substrate is thermally pre-processed to evaporate the solvents of the precursor solutions(S130). The substrate is thermally post-processed to form an oxide thin film(S140). [Reference numerals] (AA) Start; (BB) End; (S110) Forming precursor solution by mixing precursor materials with oxygenated materials; (S120) Coating the precursor solution on a substrate; (S130) Pre-process; (S140) Post-process; (S150) Supplying light energy
Abstract translation: 目的：提供用于形成氧化物薄膜的组合物，氧化物薄膜的制造方法和薄膜晶体管的制造方法，以通过控制氧化物薄膜的光量和/ 或氧化水在前体溶液中的密度。 构成：前体溶液通过将前体材料与氧化材料混合制成（S110）。 将前体溶液涂布在基材上（S120）。 将基底热预处理以蒸发前体溶液的溶剂（S130）。 将衬底热后处理以形成氧化物薄膜（S140）。 （附图标记）（AA）开始; （BB）结束; （S110）通过将前体材料与含氧材料混合而形成前体溶液; （S120）将前体溶液涂布在基材上; （S130）预处理; （S140）后期处理; （S150）供应光能
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公开(公告)号：KR1020120108640A
公开(公告)日：2012-10-05
申请号：KR1020110026787
申请日：2011-03-25
Applicant: 연세대학교 산학협력단
IPC: H01L51/42
CPC classification number: Y02E10/549 , Y02P70/521 , H01L51/42
Abstract: PURPOSE: An organic thin film adding CuO nano materials and an electronic device using the same are provided to obtain high permeability and high hole conductivity by adding CuO nano materials to the thin film. CONSTITUTION: CuO nano materials are mixed with PEDOT:PSS aqueous solutions. A thin film is formed by spin-casting the mixture on an anode. A work function of the thin film is reduced by thermally processing the thin film at 100 to 150 degrees centigrade. The CuO nano materials include CuO nano powder, CuO nano particles. CuO nano rods, and CuO nano wires.
Abstract translation: 目的：提供添加CuO纳米材料的有机薄膜和使用其的电子器件，以通过向薄膜中加入CuO纳米材料来获得高导磁率和高空穴导电性。 构成：CuO纳米材料与PEDOT：PSS水溶液混合。 通过将混合物旋转浇铸在阳极上形成薄膜。 通过在100至150摄氏度下热处理薄膜来减少薄膜的功能。 CuO纳米材料包括CuO纳米粉末，CuO纳米颗粒。 CuO纳米棒和CuO纳米线。
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公开(公告)号：KR1020120134161A
公开(公告)日：2012-12-12
申请号：KR1020110051718
申请日：2011-05-30
Applicant: 연세대학교 산학협력단
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L21/02554 , H01L21/02565 , H01L21/324 , H01L29/66742 , H01L29/7869
Abstract: PURPOSE: A method for manufacturing an oxide thin film and a method for manufacturing an oxide thin film transistor are provided to reduce production costs by reducing use of expensive substances like indium. CONSTITUTION: A gate electrode is formed on a substrate. A gate insulating layer(220') is formed on the gate electrode. A channel layer(230') is formed on the gate insulating layer. A source electrode(240) and a drain electrode(250) are formed on the channel layer. An oxide thin film is formed on the substrate in a channel layer formation step. Oxygen hole concentration of the oxide thin film increases in the channel layer formation step.
Abstract translation: 目的：提供氧化物薄膜的制造方法和氧化物薄膜晶体管的制造方法，通过减少贵金属如铟的使用来降低生产成本。 构成：在基板上形成栅电极。 栅极绝缘层（220'）形成在栅电极上。 沟道层（230'）形成在栅极绝缘层上。 源极电极（240）和漏电极（250）形成在沟道层上。 在沟道层形成工序中，在衬底上形成氧化物薄膜。 在沟道层形成步骤中氧化物薄膜的氧空穴浓度增加。
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公开(公告)号：KR1020130007245A
公开(公告)日：2013-01-18
申请号：KR1020110064766
申请日：2011-06-30
Applicant: 연세대학교 산학협력단
CPC classification number: Y02E10/549 , Y02P70/521 , H01L51/42 , C01G53/04
Abstract: PURPOSE: A nickel oxide thin film and a method for manufacturing an organic solar cell using the same are provided to efficiently transmit holes from an active layer to an anode by forming a buffer layer between the active layer and an electrode to increase hole transmission performance. CONSTITUTION: A nickel oxide precursor is prepared(100). A precursor solution is made using nickel precursor powder(200). A thin film is deposited by coating the substrate with nickel oxide precursor solutions(300). Solvents are volatilized by a pre-treatment in the deposited thin film(400). A lattice structure is formed in the thin film by a post-treatment in the thin film(500). [Reference numerals] (100) Preparing metal precursor for a solution process of a nickel oxide thin film; (200) Manufacturing a solution by dissolving a composition which is produced by mixing nickel precursors in solvent; (300) Laminating thin films by spreading the final solution of a precursor; (400) Volatilizing solvent by thermally processing laminated thin films; (500) Forming a lattice structure within a thin film by thermally processing laminated thin films again; (600) Laminating oxide indium-tin electrodes; (700) Volatilizing solvent by thermally processing an activation layer solution and by spreading the activation layer solution on a buffer layer in an anaerobic environment; (800) Laminating lithium fluoride, an aluminum electrode; (AA) Start; (BB) End
Abstract translation: 目的：提供一种氧化镍薄膜及使用其的有机太阳能电池的制造方法，通过在有源层与电极之间形成缓冲层，有效地将空穴从有源层向阳极透射，从而提高空穴传输性能。 构成：制备氧化镍前体（100）。 使用镍前体粉末（200）制备前体溶液。 通过用氧化镍前体溶液（300）涂覆基底来沉积薄膜。 溶剂通过在沉积的薄膜（400）中的预处理而挥发。 在薄膜（500）中通过后处理在薄膜中形成晶格结构。 （附图标记）（100）制备用于氧化镍薄膜的溶液处理的金属前体; （200）通过将通过将镍前体混合在溶剂中而制备的组合物溶解来制造溶液; （300）通过扩散前体的最终溶液来层压薄膜; （400）通过热处理层压薄膜的挥发溶剂; （500）通过再次热处理层叠薄膜，在薄膜内形成晶格结构; （600）层压氧化铟锡电极; （700）通过热处理活化层溶液并通过将活化层溶液铺展在厌氧环境的缓冲层上来挥发溶剂; （800）层压氟化锂，铝电极; （AA）开始; （BB）结束
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公开(公告)号：KR101438580B1
公开(公告)日：2014-09-17
申请号：KR1020140034157
申请日：2014-03-24
Applicant: 연세대학교 산학협력단
IPC: H01L21/8247 , H01L21/324
Abstract: The present invention relates to a method for treating a resistive memory device and a method for manufacturing a resistive memory device using the same. The method for treating a resistive memory device, according to an embodiment of the present invention, may include treating the resistive memory device at a temperature higher than 25°C and lower than 300°C with a pressure greater than atmospheric pressure in a hydrogen atmosphere.
Abstract translation: 本发明涉及一种用于处理电阻式存储器件的方法和一种使用该方法制造电阻式存储器件的方法。 根据本发明的实施例的用于处理电阻式存储器件的方法可以包括在氢气氛中以大于大气压的压力处理高于25℃且低于300℃的电阻性存储器件 。
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