Abstract:
The present invention relates to a method of fabricating zinc oxide nanorod arrays laterally grown in a single direction which forms a zinc oxide seed layer with the sputtering method in the state of applying a predetermined angle to a substrate, forms metal line patterns on the zinc oxide seed layer with the lift-off method, etches the substrate having metal line patterns formed, and grows zinc oxide nanorods in a single direction by performing the hydrothermal synthesis method to the manufactured substrate. The method of fabricating zinc oxide nanorod arrays laterally grown in a single direction according to the present invention is characterized in comprising a first step of forming a zinc oxide seed layer by applying an angle to a substrate mounted on a substrate holder; a second step of forming at least one metal line pattern on the zinc oxide seed layer formed in the first step with the lift-off method; a third step of etching the zinc oxide seed layer on the substrate patterned with the metal lines; and a fourth step of growing zinc oxide nanorods in a lateral direction by performing the hydrothermal synthesis method to the substrate etched in the third step. [Reference numerals] (AA) Start;(BB) End;(S10) Form a seed layer on a substrate at a certain angle;(S20) Form a metal line pattern using a lift off process;(S30) Etch the patterned substrate;(S40) Grow zinc oxide nanorods in a single direction by performing the hydrothermal synthesis method
Abstract:
본 발명의 엘이디 측정을 위한 하이브리드 MEMS 프로브카드에 따르면, 웨이퍼레벨에서 다수의 엘이디 소자에 대한 광학적 특성을 연속적으로 측정 가능하다. 본 발명에서는 전기적 특성을 측정하기 위한 MEMS 프로브카드와 광학적 특성을 측정하기 위한 광전지소자가 형성된 웨이퍼를 결합하는 것에 의해 하이브리드 MEMS 프로브카드를 구현하였다.
Abstract:
PURPOSE: A white light emitting diode including a micro lens with a dual layered structure is provided to obtain various light paths by coating the micro lens with different refractive indexes with one or more of red fluorescent and green fluorescent. CONSTITUTION: An N-type semiconductor layer(120), an active layer(130), and a P-type semiconductor layer(140) are successively formed on a substrate(110) in order to prepare a blue light emitting chip. A transparent electrode layer is formed on the P-type semiconductor layer. A positive electrode(171) is formed on the transparent electrode layer. A negative electrode(173) is formed by etching the uppermost surface of the blue light emitting diode chip to the N-type semiconductor layer. A micro lens including a first micro lens(300) and a second micro lens(500) is formed on the transparent electrode layer.
Abstract:
본 발명은 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법에 관한 것으로서, 공정시간의 제어만으로 임프린트 공정에서 문제가 되고 있는 잔여층의 높이를 제어함으로써 새로운 3차원 구조물 제조방법을 제안하고, 포토 리소그래피 공정을 추가시켜 공정을 마무리함으로써 잔여층 제거를 위한 추가 공정 없이 3차원 구조물을 제조할 수 있는 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법을 제공함에 그 특징적인 목적이 있다. 이러한 목적을 달성하기 위한 본 발명은, (a) 기판(substrate) 상부에 스핀 코팅하여 포토 레지스트를 증착하는 단계; (b) 상기 (a) 단계를 통해 증착된 포토 레지스트 위에 소정 패턴이 기록된 금형(mold)을 이용하여 소정 온도 및 소정 압력으로 임프린트하는 단계; 및 (c) 상기 (b) 단계를 통해 제작된 구조물 위에 소정 패턴이 기록된 포토 마스크(photo mask)를 마련하여, 노광(expose) 및 현상(develop) 공정을 통해 특정 패턴을 갖는 3차원 구조물을 형성하는 단계; 를 포함한다. 임프린트, 포토 리소그래피
Abstract:
A method for fabricating a sapphire substrate patterned by using an imprinting process is provided to improve efficiency of illuminance by using the sapphire substrate with various surface patterns as a reflector through difference of a refractive index. A molder with an engraved pattern is manufactured. The polymer resin is laminated on a sapphire substrate(20). The molder with the engraved pattern is covered on the sapphire substrate laminated with the polymer resin. When the molder is covered on the sapphire substrate, the polymer resin is cured by applying the heat or UV after giving the pressure. The sapphire substrate and the molder are separated. The molder is made by using at least one of silicon, polymer resin, nickel, and silica or more. The polymer resin is thermosetting polymer resin or UV curable polymer resin.