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公开(公告)号：KR1020090060833A
公开(公告)日：2009-06-15
申请号：KR1020070127774
申请日：2007-12-10
Applicant: 재단법인서울대학교산학협력재단 , 주식회사 코렌텍
CPC classification number: A61F2/28 , A61L27/04 , A61L27/045 , A61L27/06 , A61L27/12 , C23C4/06 , C23C14/30
Abstract: An implant material by the anodizing and manufacturing method thereof are provided, which obtain biocompatibility, chemical compatibility, and mechanical compatibility. An implant material manufacturing method by anodizing comprises: a step of coating the implant surface in the electron-beam evaporation process which can be anodic oxidized in the surface of the implant base material; and a step that dips the implant surface in electrolyte and anodizes the implant surface. The implant base material is made of titanium, ti-alloy, stainless steel, or the Co-CR alloy.
Abstract translation: 提供通过阳极氧化及其制造方法的植入材料，其获得生物相容性，化学相容性和机械相容性。 通过阳极氧化的植入材料制造方法包括：在电子束蒸发过程中涂覆植入物表面的步骤，其可以在植入物基材的表面中被阳极氧化; 以及在电解质中浸渍植入物表面并阳极氧化植入物表面的步骤。 植入物基材由钛，钛合金，不锈钢或Co-CR合金制成。
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公开(公告)号：KR100953959B1
公开(公告)日：2010-04-21
申请号：KR1020070127774
申请日：2007-12-10
Applicant: 재단법인서울대학교산학협력재단 , 주식회사 코렌텍
Abstract: 본 발명에 따른 양극산화법에 의한 임플란트재료 및 그 제조방법이 개시된다.
본 발명에 따르는 양극산화법에 의한 임플란트재료 및 그 제조방법은 임플란트모재의 표면에 양극산화될 수 있는 전자빔증착공정으로 임플란트표면재를 코팅하는 단계 및 상기 임플란트표면재를 전해액에 침지하여 양극산화시키는 단계를 포함하는데, 이에 의할 때 인체의 다양한 부위에 이식되어 우수한 생체 친화성(biocompatibility), 화학적 적합성(chemicalcompatibility) 및 기계적 적합성(mechanical compatibility)을 가지는 임플란트재료를 제공하는 효과가 있다.
임플란트, 전자빔증착-
公开(公告)号：KR1020030095005A
公开(公告)日：2003-12-18
申请号：KR1020020032506
申请日：2002-06-11
Applicant: 재단법인서울대학교산학협력재단
IPC: C23C18/16
CPC classification number: H01L21/76883 , C23C18/1642 , C23C18/1653 , C23C18/42 , C25D3/38 , C25D7/12 , H01L21/288 , H01L21/7684
Abstract: PURPOSE: A method for fabricating metal film for semiconductor interconnection is provided to prevent oxidation of copper thin film in formation of copper semiconductor interconnection using electrolytic plating. CONSTITUTION: The method comprises a step of preparing a semiconductor substrate formed in a fine pattern; a step of forming a copper thin film(140) all over the surface the semiconductor substrate by putting the semiconductor substrate into a copper electrolytic plating solution and impressing reduction potential to the semiconductor substrate so that copper electrolytic plating is performed on the semiconductor substrate; a substrate flattening step of flatly etching the whole surface of the semiconductor substrate so that only the copper thin film(140) formed on a groove part of the semiconductor substrate is remained; and a thin film forming step of substituting silver for the surface of the remained copper thin film by dipping the flattened semiconductor substrate into a silver substitution solution, wherein the method further comprises a heat treatment step of heat treating the silver thin film(150) formed semiconductor substrate at a nitrogen atmosphere.
Abstract translation: 目的：提供一种制造用于半导体互连的金属膜的方法，以防止铜薄膜在使用电解电镀形成铜半导体互连时的氧化。 构成：该方法包括制备以精细图案形成的半导体衬底的步骤; 通过将半导体衬底放入铜电解电镀液中并向半导体衬底施加还原电位，使半导体衬底的整个表面上形成铜薄膜（140），从而对半导体衬底进行铜电解电镀; 平面蚀刻半导体衬底的整个表面的衬底平坦化步骤，使得仅保留形成在半导体衬底的沟槽部分上的铜薄膜（140）; 以及通过将平坦化的半导体衬底浸入银取代溶液中而将银代替保留的铜薄膜的表面的薄膜形成步骤，其中该方法还包括热处理形成的银薄膜（150）的热处理步骤 半导体衬底。
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