Abstract:
A manufacturing method of pore electrostrictive ceramics having excellent capacity of hydrostatic pressure is provided to control a porosity easily and to have three dimensions strong structure. A manufacturing method of pore electrostrictive ceramics having excellent capacity of hydrostatic pressure comprises steps of: dispersing the electrostrictive ceramics powder of 5 to 25 vol.% and producing uniform slurry at a temperature over melting point of a solvent; injecting the slurry into a molded unit, solidifying it, subliming the solvent and forming a pore electrostrictive ceramics precursor; and sintering the pore piezoelectricity ceramic precursor and forming the pore electrostrictive ceramics. The electrostrictive ceramics powder is Pb(Zr,Ti)O3.
Abstract:
본 발명은 하나의 단위 셀 내에서 상변화층이 모두 동일한 선폭을 가져도 각각의 상태를 독립적으로 제어할 수 있는 상변화 메모리 소자의 단위 셀 구조를 제공하기 위한 것으로, 이를 위해 본 발명은 상변화층과, 상기 상변화층과 동일 층 내에서 상기 상변화층과 평행하게 배치된 보조 저항층을 구비하는 상변화 메모리 소자의 단위 셀을 제공한다. 상변화 메모리 소자, 하부전극, 발열체, 상변화 물질, 보조 저항층, 병렬, 결정질상, 비정질상
Abstract:
A method for preparing an MnO2 added PZN-PZT composite is provided to obtain a composite for electronic parts having sufficient dielectric and piezoelectric characteristics including an excellent mechanical quality factor. A method for preparing an MnO2 added PZN-PZT composite comprises the steps of: mixing MnO2 powder with PZN and PZT powder; molding the resultant mixed powder; and sintering the molded product at a low temperature of 1000 deg.C or lower. In the method, MnO2 is added in an amount of 0.1-0.6 wt% based on the weight of the PZN-PZT composite free from MnO2. The raw materials, MnO2, PZN and PZT, are used in such a ratio that the resultant xPZN-(1-x)PZT composite has x ranging from 0.1 to 0.6.
Abstract:
PURPOSE: A method for fabricating an electrical phase change memory device is provided to perform a phase change process in low operating current by using a heat generation and isolation layer. CONSTITUTION: An active region as a source and a drain and a cell selection transistor are formed on a silicon substrate(20). An interlayer dielectric(23) is deposited thereon. A contact is formed by performing a photoresist process and an etch process. Conductive contact materials(24) such as tungsten and titanium nitride are deposited thereon. A heat generation and isolation layer(25,25-1) is formed on the contact materials. Phase change materials(26,26-1) are deposited on the heat generation and isolation layer. A unit cell memory structure is formed by patterning the heat generation and isolation layer, the phase change materials, and a metal electrode formed on the phase change materials.
Abstract:
A free-standing piezoelectric device with excellent properties is provided to form piezoelectric-film which is precise and no cracking by forming the piezoelectric film though electric field formed from the electrode layer. In a free-standing piezoelectric device with excellent properties, a separation layer is formed on the even substrate, and the electrode layer is formed on the separation layer. The separation layer is oxidized and is divided by performing a thermal process. A piezoelectric-film is formed by the electric field formed from the electrode layer, and has the piezoelectric characteristic. Therefore, the substrate is not attached to the piezoelectric film, so the piezoelectric element having excellent a property is manufactured.
Abstract:
A method for manufacturing a spiral piezoelectric actuator using a thermoplastic material and the spiral piezoelectric actuator, and a micromini ultrasonic motor are provided to obtain a sufficient piezoelectric characteristic by performing the sintering using the thermoplastic property after making one feedrod composed of a piezoelectric element and an inert compound and extruding the feedrod through co-extrusion method. The pulverized PZN-PZT powder sintered at low temperature is made by mixing PZN made of Pb, Zn, and Nb and PZT made of Pb, Zn, and (Ti) with a predetermined ratio(S1). A piezoelectric element is made by adding polymer to the PZN-PZT powder(S2). A compound is made by adding the polymer after mixing the PZN-PZT power with Ag(S3). After forming the feedrod with a square pillar of the piezoelectric actuator composed of two-layer plate shape by co-extruding the piezoelectric element and the compound, the feedrod is cut(S4). The feedrod with a predetermined size is processed with a spiral shape in a furnace(S5). The spiral piezoelectric actuator composed of a piezoelectric layer and a compound layer is formed by performing the sintering at high temperature while combusting the polymer by heating the spiral feedrod at high temperature(S6).
Abstract:
A multilayer 2-2 piezo-composite ultrasonic transducer and a manufacturing method thereof are provided to cause a large displacement by a low voltage and to use a wide range of frequency. Two first inner electrode layers are exposed from a left side of a piezoceramic plate and directly contacted with a first outer electrode layer. The first inner electrode layers are not exposed from a right side of the piezoceramic plate but buried under a piezoelectric layer apart from a second outer electrode layer. Two second inner electrode layers are arranged to be opposed to the first inner electrode layers and contacted with the outer electrode layer, which is not contacted with the first inner electrode layers. The first and second inner electrode layers are alternatively arranged in the piezoelectric layers. When electric power is supplied to the outer electrode layers, a voltage is induced between the first and second inner electrode layers.
Abstract:
A unit cell of a multi-bit phase changeable memory device is provided to control independently each state of one unit cell according to the phase change of a phase changeable material in spite of the same CDs(Critical Dimensions) of phase changeable layers by forming a parallel structure together with the phase changeable material using a predetermined material with a proper electric resistivity between first resistivity of a crystalline phase of the phase changeable material and a second resistivity of an amorphous phase of the phase changeable material. A unit cell of a phase changeable memory device includes a phase changeable layer(112) and an auxiliary resistive layer. The auxiliary resistive layer(111) is arranged parallel with the phase changeable layer in the same layer as that of the phase changeable layer. A plurality of phase changeable layers and auxiliary resistive layers are capable of being alternately arranged in the same layer. The auxiliary resistive layer has a predetermined resistivity between a first resistivity and a second resistivity. The first resistivity is obtained from the phase changeable layer of a crystalline phase. The second resistivity is acquired from the phase changeable layer of an amorphous phase.
Abstract:
동시압출법을 이용한 내부전극이 코팅된 압전 파이버의 제조방법, 내부전극이 단면 반원형상으로 코팅된 압전 파이버 그리고 이것을 포함하는 액츄에이터가 개시된다. 본 발명은 동시압출 및 저온 동시소성을 이용하여 내부전극이 코팅된 압전 파이버를 제조함으로써 낮은 전압에서 횡방향(transverse) 진동모드(d31 진동모드)의 큰 변위를 얻을 수 있고, 특히 단면 반원형 내부전극을 형성함으로써 큰 변위를 갖는 캔틸레버형 액츄에이터에 활용할 수 있다. 동시압출, 동시소성, 동시소결, 압전 파이버, 액츄에이터, 횡방향 진동모드, 내부전극, 캔틸레버
Abstract:
본 발명은 압전 모터에 관한 것으로 보다 상세하게는 동시 사출법(Co-rxtrusion)에 의한 압전 초음파 모터의 제조 방법과 그 방법에 의해 제조된 압전 초음파 모터에 관한 것이다. 본 발명에 따른 압전 초음파 모터의 제조 방법은 저온 소결이 가능한 납(Pb), 아연(Zn), 니오브(Nb)로 조성되는 PZN과 납(Pb), 아연(Zn), 티타늄(Ti)으로 조성되는 PZT가 소정 비율로 혼합된 PZN-PZT 파우더와 폴리머를 혼합하여 압전체를 제조하는 압전체 제조 공정과; 상기 압전체 제조 공정에 의해 제조된 PZN-PZT 파우더와 은(Ag)을 소정 비율로 혼합된 파우더에 폴리머를 혼합하여 복합체를 제조하는 복합체 제조 공정과; 상기 압전체 및 복합체 제조 공정에 의해 제조된 압전체 및 복합체와 카본 블랙을 이용하여 상기 압전 모터의 초기 형상에 따른 피드로드(Feedrod)를 제작하는 피드로드 제작 공정과; 제작된 상기 피드로드(Feedrod)를 소정 크기의 성형 틀을 통해 사출하고 사출된 압전 모터 시편을 소정 크기로 절단하는 사출 공정;을 포함하는 것을 특징으로 한다. 따라서, 서로 다른 소재를 하나의 피드로드(Feedrod)로 제작하고, 제작된 피드로드(Feedrod)를 동시에 사출시켜 압전 초음파 모터를 제조함으로써, 충분한 압전효과를 가질 수 있는 압전체 및 구동력이 우수한 압전 초음파 모터를 적은 비용과 제조할 수 있는 장점이 있다. 압전체, 압전 효과, 압전 모터, PZT, PZN