公开(公告)号：KR100645264B1

公开(公告)日：2006-11-14

申请号：KR1020050105534

申请日：2005-11-04

Applicant: 재단법인서울대학교산학협력재단

Inventor： 윤의준 ,  이영수 ,  안응진 ,  박광민

IPC: H01L29/02

Abstract: A method for growing a III-V group compound semiconductor quantum dot through interception of a periodic supply of a V-group element is provided to properly control mobility of a III-group element on the surface of a substrate by continuously supplying a III-group element when a quantum dot is grown on the substrate wherein a supply of a V-group element is periodically intercepted. A buffer layer is grown on a semiconductor substrate in a chamber. A III-group element and a V-group element are supplied to grow a compound semiconductor quantum dot on the buffer layer wherein the III-group element is continuously supplied and the supply and interception of the V-group element are periodically repeated. The supply of the III-group element and the V-group element is intercepted.

Abstract translation: 通过截断V族元素的周期性供应来提供生长III-V族化合物半导体量子点的方法，以通过连续供应III族来适当地控制III族元素在衬底表面上的迁移率 当在衬底上生长量子点时，周期性截取V族元素的供应。 在腔室中的半导体衬底上生长缓冲层。 提供III族元素和V族元素以在连续提供III族元素的缓冲层上生长化合物半导体量子点，并周期性地重复供给和截取V族元素。 拦截III族元素和V族元素的供应。