公开(公告)号：KR1020090019691A

公开(公告)日：2009-02-25

申请号：KR1020080076777

申请日：2008-08-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  정용빈 ,  이동권

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/0262 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/44 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601

Abstract: A method for production of thin layer and an apparatus for manufacturing the same are provided to perform the manufacturing process at the lower temperature by dissociating the reaction gas. A substrate is provided inside the chamber(S510). The first reaction gas and the second reaction gas are supplied inside the chamber(S520). The first reaction gas is dissociated and the crystalline nano particle is formed(S530). The formation of the non-crystalline substance is suppressed on the top of the substrate by using the second reaction gas(S540). The crystalline thin layer is formed from the crystalline nano particle provided to the top of the substrate(S550).

Abstract translation: 提供薄层的制造方法及其制造装置，以通过解离反应气体来进行较低温度的制造工序。 在室内设置基板（S510）。 第一反应气体和第二反应气体在室内供给（S520）。 解离第一反应气体并形成结晶纳米颗粒（S530）。 通过使用第二反应气体在基板的顶部抑制非结晶物质的形成（S540）。 晶体薄层由设置在基板顶部的结晶纳米颗粒形成（S550）。

公开(公告)号：KR100875712B1

公开(公告)日：2008-12-23

申请号：KR1020070045402

申请日：2007-05-10

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  김찬수 ,  정용빈 ,  윤웅규

IPC: H01L21/205 ,  B82Y40/00

Abstract: A crystallized layer can be quickly obtained and also the crystallized silicon can be easily obtained by depositing and drawing selectively the crystallized charged nano particle that is deposited on substrate. The film deposition apparatus(110) comprises a chamber(115) which is maintained under the upper pressure and have the substrate(140), a gas supply system introducing the reaction gas within the chamber(120), a heating element which emits the heat in order to dissociate the ionized reaction gas(130), and the electric field application part for applying the electric field in substrate(190). A step is for introducing the reaction gas and loading the substrate in the chamber. A step is for ionizing the reaction gas by using the heating element. A step is for generating nucleation in the ionized reaction gas. A step is for forming the nano particle while the nano particle is formed. A step is for depositing film by drawing the charged nano particle to the substrate using electric field.

Abstract translation: 可以快速获得结晶层，并且结晶硅可以通过选择性沉积和选择沉积在基底上的结晶的带电纳米颗粒而容易地获得。 该成膜装置（110）包括：保持在上部压力下并具有基板（140）的腔室（115）;在腔室（120）内导入反应气体的气体供给系统;发热 以分离离子化的反应气体（130）和用于在衬底（190）中施加电场的电场施加部分。 一个步骤是引入反应气体并将衬底装入腔室中。 一个步骤是通过使用加热元件使反应气体离子化。 一个步骤是在离子化反应气体中产生成核。 一个步骤是在形成纳米颗粒的同时形成纳米颗粒。 一个步骤是通过使用电场将带电的纳米颗粒吸引到基底来沉积薄膜。

公开(公告)号：KR1020080099616A

公开(公告)日：2008-11-13

申请号：KR1020070045402

申请日：2007-05-10

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  김찬수 ,  정용빈 ,  윤웅규

IPC: H01L21/205 ,  B82Y40/00

CPC classification number: C23C16/45559 ,  H01L21/02532 ,  H01L21/0262

Abstract: A crystallized layer can be quickly obtained and also the crystallized silicon can be easily obtained by depositing and drawing selectively the crystallized charged nano particle that is deposited on substrate. The film deposition apparatus(110) comprises a chamber(115) which is maintained under the upper pressure and have the substrate(140), a gas supply system introducing the reaction gas within the chamber(120), a heating element which emits the heat in order to dissociate the ionized reaction gas(130), and the electric field application part for applying the electric field in substrate(190). A step is for introducing the reaction gas and loading the substrate in the chamber. A step is for ionizing the reaction gas by using the heating element. A step is for generating nucleation in the ionized reaction gas. A step is for forming the nano particle while the nano particle is formed. A step is for depositing film by drawing the charged nano particle to the substrate using electric field.

Abstract translation: 可以快速获得结晶层，并且通过沉积和沉积在基底上的结晶的带电荷的纳米粒子可以容易地获得结晶的硅。 成膜装置（110）包括保持在上压下并具有基底（140）的腔室（115），将反应气体引入腔室（120）内的气体供给系统，发出热量的加热元件 为了离解离子化反应气体（130）和用于在基板（190）中施加电场的电场施加部分。 步骤是引入反应气体并将衬底装载在腔室中。 通过使用加热元件使反应气体电离的步骤。 一个步骤是在电离反应气体中产生成核。 形成纳米颗粒的步骤是形成纳米颗粒。 步骤是通过使用电场将带电荷的纳米颗粒拉伸到基底上来沉积膜。

公开(公告)号：KR101028416B1

公开(公告)日：2011-04-13

申请号：KR1020080076777

申请日：2008-08-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  정용빈 ,  이동권

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/0262 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/44 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601

Abstract: 상기 박막 제조 방법에 있어서, 챔버 내에 기판을 제공한다. 챔버 내에 제1 반응 가스 및 제2 반응 가스를 공급한다. 그리고, 제1 반응 가스를 해리하여 결정성 나노 입자를 형성한다. 제2 반응 가스를 이용하여 기판 상에 비결정성 물질의 형성을 억제한다. 그리고, 기판 상에 제공된 결정성 나노 입자로부터 결정성 박막을 형성한다.