公开(公告)号：KR1020090031193A

公开(公告)日：2009-03-25

申请号：KR1020080040821

申请日：2008-04-30

Applicant: 삼성전자주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 최상무 ,  황농문 ,  설광수 ,  김찬수 ,  윤웅규 ,  이동권

IPC: H01L21/318 ,  B82Y40/00

CPC classification number: H01L21/0217 ,  B82Y40/00 ,  H01L21/02271 ,  H01L29/518

Abstract: A method of forming silicon nitride at low temperature, charge trap memory device comprising crystalline nano dots formed using the same and method of manufacturing charge trap memory device are provided to prevent the increment of the leakage current even though the thickness of the nitride film is thin. The substrate is loaded in the chamber of the silicon nitride deposition apparatus(100). The silicon nitride deposition apparatus includes a filament. The temperature of filament is increased to the dissociation temperature of the reaction gas(110). The reaction gas for the silicon nitride formation is supplied to the chamber(120). Therefore, the crystalline silicon nitride is formed in the top of the substrate. At this time, the temperature of filament is maintained by 1400°C-2000°C. The pressure of the chamber maintains in the number torr~ several tens torr.

Abstract translation: 在低温下形成氮化硅的方法，提供包括使用其形成的晶体纳米点的电荷陷阱存储器件以及制造电荷陷阱存储器件的方法，以防止漏电流的增加，即使氮化物膜的厚度较薄 。 将衬底装载在氮化硅沉积装置（100）的腔室中。 氮化硅沉积设备包括长丝。 灯丝的温度升高到反应气体（110）的解离温度。 用于氮化硅形成的反应气体被供应到室（120）。 因此，晶体氮化硅形成在基板的顶部。 此时，灯丝的温度保持在1400℃-2000℃。 室内的压力维持在几十托。

公开(公告)号：KR101028416B1

公开(公告)日：2011-04-13

申请号：KR1020080076777

申请日：2008-08-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  정용빈 ,  이동권

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/0262 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/44 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601

Abstract: 상기 박막 제조 방법에 있어서, 챔버 내에 기판을 제공한다. 챔버 내에 제1 반응 가스 및 제2 반응 가스를 공급한다. 그리고, 제1 반응 가스를 해리하여 결정성 나노 입자를 형성한다. 제2 반응 가스를 이용하여 기판 상에 비결정성 물질의 형성을 억제한다. 그리고, 기판 상에 제공된 결정성 나노 입자로부터 결정성 박막을 형성한다.

公开(公告)号：KR1020090019691A

公开(公告)日：2009-02-25

申请号：KR1020080076777

申请日：2008-08-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  정용빈 ,  이동권

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/0262 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/44 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601

Abstract: A method for production of thin layer and an apparatus for manufacturing the same are provided to perform the manufacturing process at the lower temperature by dissociating the reaction gas. A substrate is provided inside the chamber(S510). The first reaction gas and the second reaction gas are supplied inside the chamber(S520). The first reaction gas is dissociated and the crystalline nano particle is formed(S530). The formation of the non-crystalline substance is suppressed on the top of the substrate by using the second reaction gas(S540). The crystalline thin layer is formed from the crystalline nano particle provided to the top of the substrate(S550).

Abstract translation: 提供薄层的制造方法及其制造装置，以通过解离反应气体来进行较低温度的制造工序。 在室内设置基板（S510）。 第一反应气体和第二反应气体在室内供给（S520）。 解离第一反应气体并形成结晶纳米颗粒（S530）。 通过使用第二反应气体在基板的顶部抑制非结晶物质的形成（S540）。 晶体薄层由设置在基板顶部的结晶纳米颗粒形成（S550）。