公开(公告)号：KR100875712B1

公开(公告)日：2008-12-23

申请号：KR1020070045402

申请日：2007-05-10

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  김찬수 ,  정용빈 ,  윤웅규

IPC: H01L21/205 ,  B82Y40/00

Abstract: A crystallized layer can be quickly obtained and also the crystallized silicon can be easily obtained by depositing and drawing selectively the crystallized charged nano particle that is deposited on substrate. The film deposition apparatus(110) comprises a chamber(115) which is maintained under the upper pressure and have the substrate(140), a gas supply system introducing the reaction gas within the chamber(120), a heating element which emits the heat in order to dissociate the ionized reaction gas(130), and the electric field application part for applying the electric field in substrate(190). A step is for introducing the reaction gas and loading the substrate in the chamber. A step is for ionizing the reaction gas by using the heating element. A step is for generating nucleation in the ionized reaction gas. A step is for forming the nano particle while the nano particle is formed. A step is for depositing film by drawing the charged nano particle to the substrate using electric field.

Abstract translation: 可以快速获得结晶层，并且结晶硅可以通过选择性沉积和选择沉积在基底上的结晶的带电纳米颗粒而容易地获得。 该成膜装置（110）包括：保持在上部压力下并具有基板（140）的腔室（115）;在腔室（120）内导入反应气体的气体供给系统;发热 以分离离子化的反应气体（130）和用于在衬底（190）中施加电场的电场施加部分。 一个步骤是引入反应气体并将衬底装入腔室中。 一个步骤是通过使用加热元件使反应气体离子化。 一个步骤是在离子化反应气体中产生成核。 一个步骤是在形成纳米颗粒的同时形成纳米颗粒。 一个步骤是通过使用电场将带电的纳米颗粒吸引到基底来沉积薄膜。

公开(公告)号：KR1020090031193A

公开(公告)日：2009-03-25

申请号：KR1020080040821

申请日：2008-04-30

Applicant: 삼성전자주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 최상무 ,  황농문 ,  설광수 ,  김찬수 ,  윤웅규 ,  이동권

IPC: H01L21/318 ,  B82Y40/00

CPC classification number: H01L21/0217 ,  B82Y40/00 ,  H01L21/02271 ,  H01L29/518

Abstract: A method of forming silicon nitride at low temperature, charge trap memory device comprising crystalline nano dots formed using the same and method of manufacturing charge trap memory device are provided to prevent the increment of the leakage current even though the thickness of the nitride film is thin. The substrate is loaded in the chamber of the silicon nitride deposition apparatus(100). The silicon nitride deposition apparatus includes a filament. The temperature of filament is increased to the dissociation temperature of the reaction gas(110). The reaction gas for the silicon nitride formation is supplied to the chamber(120). Therefore, the crystalline silicon nitride is formed in the top of the substrate. At this time, the temperature of filament is maintained by 1400°C-2000°C. The pressure of the chamber maintains in the number torr~ several tens torr.

Abstract translation: 在低温下形成氮化硅的方法，提供包括使用其形成的晶体纳米点的电荷陷阱存储器件以及制造电荷陷阱存储器件的方法，以防止漏电流的增加，即使氮化物膜的厚度较薄 。 将衬底装载在氮化硅沉积装置（100）的腔室中。 氮化硅沉积设备包括长丝。 灯丝的温度升高到反应气体（110）的解离温度。 用于氮化硅形成的反应气体被供应到室（120）。 因此，晶体氮化硅形成在基板的顶部。 此时，灯丝的温度保持在1400℃-2000℃。 室内的压力维持在几十托。

公开(公告)号：KR1020080099616A

公开(公告)日：2008-11-13

申请号：KR1020070045402

申请日：2007-05-10

Applicant: 재단법인서울대학교산학협력재단

Inventor： 황농문 ,  김찬수 ,  정용빈 ,  윤웅규

IPC: H01L21/205 ,  B82Y40/00

CPC classification number: C23C16/45559 ,  H01L21/02532 ,  H01L21/0262

Abstract: A crystallized layer can be quickly obtained and also the crystallized silicon can be easily obtained by depositing and drawing selectively the crystallized charged nano particle that is deposited on substrate. The film deposition apparatus(110) comprises a chamber(115) which is maintained under the upper pressure and have the substrate(140), a gas supply system introducing the reaction gas within the chamber(120), a heating element which emits the heat in order to dissociate the ionized reaction gas(130), and the electric field application part for applying the electric field in substrate(190). A step is for introducing the reaction gas and loading the substrate in the chamber. A step is for ionizing the reaction gas by using the heating element. A step is for generating nucleation in the ionized reaction gas. A step is for forming the nano particle while the nano particle is formed. A step is for depositing film by drawing the charged nano particle to the substrate using electric field.

Abstract translation: 可以快速获得结晶层，并且通过沉积和沉积在基底上的结晶的带电荷的纳米粒子可以容易地获得结晶的硅。 成膜装置（110）包括保持在上压下并具有基底（140）的腔室（115），将反应气体引入腔室（120）内的气体供给系统，发出热量的加热元件 为了离解离子化反应气体（130）和用于在基板（190）中施加电场的电场施加部分。 步骤是引入反应气体并将衬底装载在腔室中。 通过使用加热元件使反应气体电离的步骤。 一个步骤是在电离反应气体中产生成核。 形成纳米颗粒的步骤是形成纳米颗粒。 步骤是通过使用电场将带电荷的纳米颗粒拉伸到基底上来沉积膜。