公开(公告)号：KR100401416B1

公开(公告)日：2003-10-17

申请号：KR1020010009078

申请日：2001-02-22

Applicant: 재단법인서울대학교산학협력재단

Inventor： 박병국 ,  이종덕 ,  최영진

IPC: H01L29/78

Abstract: PURPOSE: A field effect transistor and a method for fabricating the same are provided to use a shallow electronic layer excited by a field effect as a source/drain region. CONSTITUTION: A gate insulating layer(2) is formed on a semiconductor substrate(1) by growing an oxide layer. A side gate material layer is formed by depositing and doping a polysilicon on the gate insulating layer(2). The side gate material layer is patterned. A source/drain diffusion layer(4) is formed by implanting ions into the semiconductor substrate(1). A silicon nitride layer(5) is deposited on the patterned side gate material layer. A silicon oxide layer is formed on the side gate material layer and the silicon nitride layer(5). A silicon oxide layer sidewall(6) is formed by etching the silicon oxide layer. A couple of side gate(3) is formed by etching a side gate material layer. A main gate(7) is formed by depositing and doping the polysilicon.

Abstract translation: 目的：提供一种场效应晶体管及其制造方法，以使用由场效应激发的浅电子层作为源极/漏极区域。 构成：通过生长氧化物层在半导体衬底（1）上形成栅极绝缘层（2）。 通过在栅极绝缘层（2）上沉积和掺杂多晶硅来形成侧栅极材料层。 侧栅材料层被图案化。 通过将离子注入到半导体衬底（1）中形成源极/漏极扩散层（4）。 氮化硅层（5）沉积在图案化的侧栅极材料层上。 在侧栅极材料层和氮化硅层（5）上形成氧化硅层。 通过刻蚀氧化硅层形成氧化硅层侧壁（6）。 通过蚀刻侧栅极材料层形成一对侧栅极（3）。 主栅极（7）通过沉积和掺杂多晶硅形成。

公开(公告)号：KR1020020068801A

公开(公告)日：2002-08-28

申请号：KR1020010009078

申请日：2001-02-22

Applicant: 재단법인서울대학교산학협력재단

Inventor： 박병국 ,  이종덕 ,  최영진

IPC: H01L29/78

Abstract: PURPOSE: A field effect transistor and a method for fabricating the same are provided to use a shallow electronic layer excited by a field effect as a source/drain region. CONSTITUTION: A gate insulating layer(2) is formed on a semiconductor substrate(1) by growing an oxide layer. A side gate material layer is formed by depositing and doping a polysilicon on the gate insulating layer(2). The side gate material layer is patterned. A source/drain diffusion layer(4) is formed by implanting ions into the semiconductor substrate(1). A silicon nitride layer(5) is deposited on the patterned side gate material layer. A silicon oxide layer is formed on the side gate material layer and the silicon nitride layer(5). A silicon oxide layer sidewall(6) is formed by etching the silicon oxide layer. A couple of side gate(3) is formed by etching a side gate material layer. A main gate(7) is formed by depositing and doping the polysilicon.

Abstract translation: 目的：提供场效应晶体管及其制造方法，以使用由场效应激发的浅电子层作为源/漏区。 构成：通过生长氧化物层，在半导体衬底（1）上形成栅绝缘层（2）。 通过在栅极绝缘层（2）上沉积和掺杂多晶硅来形成侧栅极材料层。 侧栅材料层被图案化。 源极/漏极扩散层（4）通过将离子注入到半导体衬底（1）中而形成。 在图案化的侧栅极材料层上沉积氮化硅层（5）。 在侧栅材料层和氮化硅层（5）上形成氧化硅层。 通过蚀刻氧化硅层形成氧化硅层侧壁（6）。 通过蚀刻侧栅材料层形成一对侧栅（3）。 通过沉积和掺杂多晶硅形成主栅极（7）。