公开(公告)号：KR100740318B1

公开(公告)日：2007-07-18

申请号：KR1020060070782

申请日：2006-07-27

Applicant: 전남대학교산학협력단

Inventor： 김태언 ,  김보람 ,  문종하 ,  이병택 ,  김진혁

IPC: H01L21/20 ,  H01L21/205

Abstract: A method for forming SrTiO3/BaTiO3 artificial super lattices on a silicon substrate by using a TiN buffer layer is provided to enhance crystallization and dielectric characteristics by alternatively depositing a SrTiO3 thin film and a BaTiO3 thin film on the substrate. A silicon substrate is inputted in a chamber of a pulse laser depositing apparatus, and then a TiN buffer layer is deposited on the silicon substrate with the TiN buffer layer at a temperature of 650 to 750°C. A SrTiO3 thin film and a BaTiO3 thin film are alternatively deposited on the silicon substrate at a temperature of 300 to 750°C to form artificial super lattices.

Abstract translation: 提供了通过使用TiN缓冲层在硅衬底上形成SrTiO 3 / BaTiO 3人造超晶格的方法，以通过交替地在衬底上沉积SrTiO 3薄膜和BaTiO 3薄膜来增强结晶和介电特性。 将硅衬底输入脉冲激光沉积设备的腔室中，然后在具有TiN缓冲层的硅衬底上沉积TiN缓冲层，温度为650-750℃。 SrTiO3薄膜和BaTiO3薄膜交替地沉积在硅衬底上，温度为300至750℃以形成人造超晶格。