公开(公告)号：KR1020100082512A

公开(公告)日：2010-07-19

申请号：KR1020090001849

申请日：2009-01-09

Applicant: 전자부품연구원

Inventor： 최향희 ,  김성동 ,  김창호 ,  박준식 ,  이민호 ,  박광범 ,  최광용

IPC: G01N27/12 ,  B82Y15/00

Abstract: PURPOSE: A gas sensor and a method of manufacture thereof is provided to manufacture a gas sensor having fast response speed and high reproducibility. CONSTITUTION: A gas sensor comprises an insulating layer(120), a restored metal sensitizer(130), a source electrode(140) and a drain electrode(150). The insulating layer is formed on a substrate(110). The metal sensitizer comprises metal and the restored carbon nanotube. The restored metal is formed on the insulating layer and senses gas. The substrate is composed of the silicon substrate. The insulating layer comprises the silicon oxide film.

Abstract translation: 目的：提供气体传感器及其制造方法，以制造具有快速响应速度和高再现性的气体传感器。 构成：气体传感器包括绝缘层（120），恢复的金属敏化剂（130），源电极（140）和漏电极（150）。 绝缘层形成在基板（110）上。 金属敏化剂包括金属和还原的碳纳米管。 恢复的金属形成在绝缘层上并感测气体。 基板由硅基板构成。 绝缘层包括氧化硅膜。