公开(公告)号：KR100373739B1

公开(公告)日：2003-02-26

申请号：KR1020010024607

申请日：2001-05-07

Applicant: 조동일

Inventor： 조동일 ,  김종팔

IPC: H01L21/027

CPC classification number: B81C1/00396 ,  B81B2203/0136 ,  B81C1/00595 ,  B81C2201/053

Abstract: The present invention, by improving the silicon surface/bulk micromachining technology using two steps of silicon etch mask patterning and four steps of silicon etching, fabricates a structure which has vertically offset electrodes and consequently fabricates an electrostatic vertical and torsional actuator using one single-crystalline silicon wafer. According to the method of the present invention, the problems of the prior art that used a number of silicon wafers and single/double SOI wafers, or combining of these wafers with additional deposited poly-crystalline silicon films, may be resolved.

Abstract translation: 本发明通过使用两个步骤的硅蚀刻掩模图案化和四个步骤的硅蚀刻改进硅表面/体微机械加工技术来制造具有垂直偏移电极并因此制造静电垂直和扭转致动器的结构，其中使用一个单晶 硅晶片。 根据本发明的方法，可以解决使用多个硅晶片和单/双SOI晶片或将这些晶片与附加沉积的多晶硅膜组合的现有技术的问题。

公开(公告)号：KR1020030017003A

公开(公告)日：2003-03-03

申请号：KR1020010051103

申请日：2001-08-23

Applicant: 조동일

Inventor： 조동일 ,  이승기 ,  김종팔 ,  박상준 ,  백승준 ,  김세태 ,  구치완

IPC: H01L21/308

Abstract: PURPOSE: A method for fabricating a (100) directional GaAs beam having a rectangular cross-section is provided to obtain a floated (100) directional GaAs beam by using a (001) GaAs substrate as a structural material. CONSTITUTION: An etch mask having a (100) directional boundary is patterned by using a (001) GaAs substrate. A stepped structure is formed perpendicularly to a wall face of a structure by wet etching or dry etching. The amount of undercut corresponds to the amount of etch to the direction of depth if the wet etching is done. A wall protection layer of the fabricated structure is formed. A (100) directional beam is floated by the wet etching of the structure having the wall protection layer.

Abstract translation: 目的：提供一种用于制造具有矩形截面的（100）方向GaAs束的方法，以通过使用（001）GaAs衬底作为结构材料获得浮动（100）方向GaAs束。 构成：通过使用（001）GaAs衬底来图案化具有（100）方向边界的蚀刻掩模。 通过湿蚀刻或干蚀刻垂直于结构的壁面形成阶梯结构。 如果进行湿蚀刻，底切的量对应于对深度方向的蚀刻量。 形成制造结构的壁保护层。 通过对具有壁保护层的结构的湿式蚀刻来浮动（100）定向光束。

公开(公告)号：KR1020030067847A

公开(公告)日：2003-08-19

申请号：KR1020020007326

申请日：2002-02-08

Applicant: 조동일

Inventor： 조동일 ,  이승기 ,  김종팔 ,  박상준 ,  백승준 ,  김세태 ,  구치완

IPC: H01L21/306

Abstract: PURPOSE: A method for manufacturing a GaAs semiconductor fine structure is provided to be capable of forming a floated fine structure having a rectangular beam type by using an ammonium hydroxide based etching solution. CONSTITUTION: An etching mask pattern is formed on the upper predetermined portion of a GaAs substrate(20) or a substrate with a GaAs layer. The GaAs substrate is etched to the direction as much as the first depth by carrying out a wet or dry etching process using the etching mask pattern. Then, a floated GaAs fine structure(27) having a rectangular beam type, is formed by carrying out a specific etching process at the lower portion of the etching mask pattern. At this time, the GaAs substrate is etched by using an ammonium hydroxide based etching solution of 30Wt% NH4OH: 30Wt% H2O2: H2O = 25ml: 25ml: 450ml.

Abstract translation: 目的：提供一种制造GaAs半导体精细结构的方法，其能够通过使用基于氢氧化铵的蚀刻溶液形成具有矩形束型的浮动精细结构。 构成：在GaAs衬底（20）的上部预定部分或具有GaAs层的衬底上形成蚀刻掩模图案。 通过使用蚀刻掩模图案进行湿式或干法蚀刻工艺，将砷化镓衬底蚀刻至<001>方向与第一深度一样多。 然后，通过在蚀刻掩模图案的下部进行特定的蚀刻工艺来形成具有矩形波束类型的漂浮的GaAs精细结构（27）。 此时，通过使用30Wt％NH 4 OH：30Wt％H 2 O 2 :H 2 O = 25ml:25ml:450ml的氢氧化铵基蚀刻溶液蚀刻GaAs衬底。

公开(公告)号：KR100408761B1

公开(公告)日：2003-12-11

申请号：KR1020010051103

申请日：2001-08-23

Applicant: 조동일

Inventor： 조동일 ,  이승기 ,  김종팔 ,  박상준 ,  백승준 ,  김세태 ,  구치완

IPC: H01L21/308

Abstract: PURPOSE: A method for fabricating a (100) directional GaAs beam having a rectangular cross-section is provided to obtain a floated (100) directional GaAs beam by using a (001) GaAs substrate as a structural material. CONSTITUTION: An etch mask having a (100) directional boundary is patterned by using a (001) GaAs substrate. A stepped structure is formed perpendicularly to a wall face of a structure by wet etching or dry etching. The amount of undercut corresponds to the amount of etch to the direction of depth if the wet etching is done. A wall protection layer of the fabricated structure is formed. A (100) directional beam is floated by the wet etching of the structure having the wall protection layer.

Abstract translation: 目的：提供一种用于制造具有矩形截面的（100）定向GaAs束的方法，以通过使用（001）GaAs衬底作为结构材料来获得浮动（100）定向GaAs束。 构成：通过使用（001）GaAs衬底来图案化具有（100）定向边界的蚀刻掩模。 通过湿法蚀刻或干法蚀刻，垂直于结构的壁面形成台阶结构。 如果完成湿法蚀刻，底切量对应于深度方向上的蚀刻量。 制造的结构的壁保护层被形成。 （100）定向光束通过对具有壁保护层的结构进行湿法蚀刻而浮动。

公开(公告)号：KR1020020085211A

公开(公告)日：2002-11-16

申请号：KR1020010024607

申请日：2001-05-07

Applicant: 조동일

Inventor： 조동일 ,  김종팔

IPC: H01L21/027

CPC classification number: B81C1/00396 ,  B81B2203/0136 ,  B81C1/00595 ,  B81C2201/053

Abstract: PURPOSE: A method for fabricating an electrostatic vertical actuator by using one single crystalline silicon wafer is provided to for the electrostatic vertical actuator by using one single crystalline silicon wafer with a MEMS(Micro Electro Mechanical System) method. CONSTITUTION: The first silicon etch mask is deposited on a silicon wafer. A photoresist layer pattern is formed on the silicon etch mask by performing photo-lithography process. The second silicon etch mask is deposited and patterned thereon. The first silicon etch process is etched. The second etch mask is removed. The second silicon etch process is performed. A protective layer is formed thereon. The third silicon etch process is performed. A sacrificial layer is etched by using an alkali aqueous solution. The fourth silicon etch process is performed. A stepped structure is completed by removing the first silicon etch mask and the protective layer. An upper electrode and a lower electrode of a vertical actuator are formed thereon. A thermal oxide layer is deposited on the silicon wafer and a polysilicon is deposited thereon. The polysilicon of a bottom portion is etched by using an upper portion metal as an etch mask.

Abstract translation: 目的：通过使用具有MEMS（微机电系统）的一个单晶硅晶片，为静电垂直致动器提供使用一个单晶硅晶片制造静电垂直致动器的方法。 构成：第一硅蚀刻掩模沉积在硅晶片上。 通过进行光刻工艺在硅蚀刻掩模上形成光致抗蚀剂图案。 在其上沉积和图案化第二硅蚀刻掩模。 蚀刻第一硅蚀刻工艺。 第二蚀刻掩模被去除。 执行第二硅蚀刻工艺。 在其上形成保护层。 执行第三硅蚀刻工艺。 通过使用碱性水溶液蚀刻牺牲层。 执行第四硅蚀刻工艺。 通过去除第一硅蚀刻掩模和保护层来完成阶梯式结构。 在其上形成垂直致动器的上电极和下电极。 在硅晶片上沉积热氧化物层，并且在其上沉积多晶硅。 通过使用上部金属作为蚀刻掩模来蚀刻底部的多晶硅。