公开(公告)号：KR1020030017003A

公开(公告)日：2003-03-03

申请号：KR1020010051103

申请日：2001-08-23

Applicant: 조동일

Inventor： 조동일 ,  이승기 ,  김종팔 ,  박상준 ,  백승준 ,  김세태 ,  구치완

IPC: H01L21/308

Abstract: PURPOSE: A method for fabricating a (100) directional GaAs beam having a rectangular cross-section is provided to obtain a floated (100) directional GaAs beam by using a (001) GaAs substrate as a structural material. CONSTITUTION: An etch mask having a (100) directional boundary is patterned by using a (001) GaAs substrate. A stepped structure is formed perpendicularly to a wall face of a structure by wet etching or dry etching. The amount of undercut corresponds to the amount of etch to the direction of depth if the wet etching is done. A wall protection layer of the fabricated structure is formed. A (100) directional beam is floated by the wet etching of the structure having the wall protection layer.

Abstract translation: 目的：提供一种用于制造具有矩形截面的（100）方向GaAs束的方法，以通过使用（001）GaAs衬底作为结构材料获得浮动（100）方向GaAs束。 构成：通过使用（001）GaAs衬底来图案化具有（100）方向边界的蚀刻掩模。 通过湿蚀刻或干蚀刻垂直于结构的壁面形成阶梯结构。 如果进行湿蚀刻，底切的量对应于对深度方向的蚀刻量。 形成制造结构的壁保护层。 通过对具有壁保护层的结构的湿式蚀刻来浮动（100）定向光束。

公开(公告)号：KR1020030067847A

公开(公告)日：2003-08-19

申请号：KR1020020007326

申请日：2002-02-08

Applicant: 조동일

Inventor： 조동일 ,  이승기 ,  김종팔 ,  박상준 ,  백승준 ,  김세태 ,  구치완

IPC: H01L21/306

Abstract: PURPOSE: A method for manufacturing a GaAs semiconductor fine structure is provided to be capable of forming a floated fine structure having a rectangular beam type by using an ammonium hydroxide based etching solution. CONSTITUTION: An etching mask pattern is formed on the upper predetermined portion of a GaAs substrate(20) or a substrate with a GaAs layer. The GaAs substrate is etched to the direction as much as the first depth by carrying out a wet or dry etching process using the etching mask pattern. Then, a floated GaAs fine structure(27) having a rectangular beam type, is formed by carrying out a specific etching process at the lower portion of the etching mask pattern. At this time, the GaAs substrate is etched by using an ammonium hydroxide based etching solution of 30Wt% NH4OH: 30Wt% H2O2: H2O = 25ml: 25ml: 450ml.

Abstract translation: 目的：提供一种制造GaAs半导体精细结构的方法，其能够通过使用基于氢氧化铵的蚀刻溶液形成具有矩形束型的浮动精细结构。 构成：在GaAs衬底（20）的上部预定部分或具有GaAs层的衬底上形成蚀刻掩模图案。 通过使用蚀刻掩模图案进行湿式或干法蚀刻工艺，将砷化镓衬底蚀刻至<001>方向与第一深度一样多。 然后，通过在蚀刻掩模图案的下部进行特定的蚀刻工艺来形成具有矩形波束类型的漂浮的GaAs精细结构（27）。 此时，通过使用30Wt％NH 4 OH：30Wt％H 2 O 2 :H 2 O = 25ml:25ml:450ml的氢氧化铵基蚀刻溶液蚀刻GaAs衬底。

公开(公告)号：KR100408761B1

公开(公告)日：2003-12-11

申请号：KR1020010051103

申请日：2001-08-23

Applicant: 조동일

Inventor： 조동일 ,  이승기 ,  김종팔 ,  박상준 ,  백승준 ,  김세태 ,  구치완

IPC: H01L21/308

Abstract: PURPOSE: A method for fabricating a (100) directional GaAs beam having a rectangular cross-section is provided to obtain a floated (100) directional GaAs beam by using a (001) GaAs substrate as a structural material. CONSTITUTION: An etch mask having a (100) directional boundary is patterned by using a (001) GaAs substrate. A stepped structure is formed perpendicularly to a wall face of a structure by wet etching or dry etching. The amount of undercut corresponds to the amount of etch to the direction of depth if the wet etching is done. A wall protection layer of the fabricated structure is formed. A (100) directional beam is floated by the wet etching of the structure having the wall protection layer.

Abstract translation: 目的：提供一种用于制造具有矩形截面的（100）定向GaAs束的方法，以通过使用（001）GaAs衬底作为结构材料来获得浮动（100）定向GaAs束。 构成：通过使用（001）GaAs衬底来图案化具有（100）定向边界的蚀刻掩模。 通过湿法蚀刻或干法蚀刻，垂直于结构的壁面形成台阶结构。 如果完成湿法蚀刻，底切量对应于深度方向上的蚀刻量。 制造的结构的壁保护层被形成。 （100）定向光束通过对具有壁保护层的结构进行湿法蚀刻而浮动。