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公开(公告)号：KR101587053B1
公开(公告)日：2016-01-21
申请号：KR1020090113254
申请日：2009-11-23
Applicant: 주성엔지니어링(주)
IPC: H01L21/205 , H01L21/3065
Abstract: 본발명은플라즈마의소스및 접지전극에가스분사수단을설치한기판처리장치에관한것으로, 기판처리장치는다수의개구및 상기다수의개구사이에다수의제 1 하부돌출부를포함하는리드와몸체의결합에의해반응공간을제공하는공정챔버; 상기다수의개구각각을밀봉하고다수의제 2 하부돌출부각각을포함하는다수의절연판; 상기다수의절연판각각의상부에설치되는다수의안테나; 상기다수의제 1 하부돌출부및 상기다수의제 2 하부돌출부의각각과대응되는상기리드및 상기다수의절연판에설치된가스분사수단; 상기반응공간에위치하고기판이안치되는기판안치수단;을포함하는것을특징으로한다.
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公开(公告)号：KR1020110054994A
公开(公告)日：2011-05-25
申请号：KR1020090111839
申请日：2009-11-19
Applicant: 주성엔지니어링(주)
IPC: H01L21/68
Abstract: PURPOSE: A substrate processing apparatus and a processing method thereof are provided to uniformly deposit or etch a thin film through the repetitive horizontal reciprocation of a substrate receiving unit. CONSTITUTION: A process chamber(112) provides a reaction space. A substrate receiving unit(122) is located on the reaction space. The substrate is loaded on the reaction space. A driving device(150) horizontally moves the substrate receiving unit. The substrate receiving unit includes a substrate support plate, a support shaft, and a sealing unit. The support shaft supports the substrate support plate and penetrates through the lower side of the process chamber. The sealing unit receives the support shaft on the lower side of the process chamber and maintains airtightness.
Abstract translation: 目的：提供基板处理装置及其处理方法，以通过基板接收单元的重复水平往复运动来均匀地沉积或蚀刻薄膜。 构成：处理室（112）提供反应空间。 基板接收单元（122）位于反应空间上。 将底物装载在反应空间上。 驱动装置（150）水平移动基板接收单元。 基板接收单元包括基板支撑板，支撑轴和密封单元。 支撑轴支撑基板支撑板并穿过处理室的下侧。 密封单元接收处理室下侧的支撑轴，并保持气密性。
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公开(公告)号：KR1020110018229A
公开(公告)日：2011-02-23
申请号：KR1020090075926
申请日：2009-08-17
Applicant: 주성엔지니어링(주)
IPC: H01L21/3065 , H01L21/67
CPC classification number: H01L21/67173 , H01L21/67706
Abstract: PURPOSE: An apparatus and a method for treating a substrate are provided to reduce production costs by successively managing a plurality of processes inside through a batch-process. CONSTITUTION: A housing(112) provides an internal space. A plasma generating device(114) is arranged inside the housing and comprises a plurality of sub plasma generating devices. A plurality of sub plasma generating devices generate different plasma. A substrate transfer apparatus(116) is arranged in the lower part of the plasma generating device. The substrate transfer apparatus transfers a substrate according to the plasma generating device.
Abstract translation: 目的：提供一种用于处理基板的设备和方法，以通过间歇处理内部连续管理多个处理来降低生产成本。 构成：外壳（112）提供内部空间。 等离子体产生装置（114）布置在壳体内部并且包括多个亚等离子体产生装置。 多个次等离子体产生装置产生不同的等离子体。 在等离子体发生装置的下部配置有基板搬送装置（116）。 基板转印装置根据等离子体生成装置传送基板。
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公开(公告)号：KR1020100054243A
公开(公告)日：2010-05-25
申请号：KR1020080113068
申请日：2008-11-14
Applicant: 주성엔지니어링(주)
Inventor： 도재철
IPC: H01L21/677 , H01L21/00 , H01L21/205
CPC classification number: H01L21/67201 , H01L21/67769 , H01L21/68714 , H01L21/68735 , H01L21/68757 , Y10S414/139
Abstract: PURPOSE: A load lock chamber for manufacturing a semiconductor device and an apparatus for manufacturing the semiconductor device are provided to prevent a teaching failure of a wafer transfer arm by aligning the position of a wafer through a wafer slide preventing unit. CONSTITUTION: A load lock chamber for manufacturing a semiconductor device includes a wafer receiving device which temporarily stores a wafer. The wafer receiving device includes a receiving frame(210), a wafer support unit(220), and a wafer slide prevention unit. The receiving frame receives a plurality of wafers. A plurality of wafer support units made of metal materials are formed on the sidewall of the receiving frame and supports the wafer. The wafer slide preventing unit is formed on the plurality of wafer support units and prevents the slide of the wafer using temperature difference between the wafer support unit and the wafer.
Abstract translation: 目的：提供一种用于制造半导体器件的装载锁定室和用于制造半导体器件的装置，以通过将晶片的位置通过晶片防滑单元对准来防止晶片传送臂的教学故障。 构成：用于制造半导体器件的负载锁定室包括临时存储晶片的晶片接收装置。 晶片接收装置包括接收框架（210），晶片支撑单元（220）和晶片滑动防止单元。 接收框架接收多个晶片。 在接收框架的侧壁上形成多个由金属材料制成的晶片支撑单元并支撑晶片。 晶片防滑单元形成在多个晶片支撑单元上，并且防止晶片的滑动使用晶片支撑单元和晶片之间的温度差。
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Patent Agency Ranking
公开(公告)号：KR1020130081369A
公开(公告)日：2013-07-17
申请号：KR1020120002289
申请日：2012-01-09
Applicant: 주성엔지니어링(주)
IPC: H01L21/205
Abstract: PURPOSE: A thin film depositing apparatus, a plasma generating apparatus, and a thin film depositing method are provided to form a thin film with high quality by separating a plasma region from a reaction region by using a linear multiple electrode. CONSTITUTION: A plasma region (107) generates plasma by using a first gas. The first gas is supplied between a ground electrode and a power electrode through a first gas supply line. A reaction region (109) interacts with the plasma by using a second gas. The second gas is supplied through a second gas supply line via the ground electrode. A substrate holder is arranged on the reaction region. [Reference numerals] (AA) First gas; (BB) Second gas; (CC) First direction; (DD) Second direction; (EE) Third direction
Abstract translation: 目的：提供薄膜沉积设备，等离子体产生设备和薄膜沉积方法，通过使用线性多电极从反应区域分离等离子体区域，从而形成高质量的薄膜。 构成：等离子体区域（107）通过使用第一气体产生等离子体。 第一气体通过第一气体供给管路在接地电极和功率电极之间供给。 反应区域（109）通过使用第二气体与等离子体相互作用。 第二气体经由接地电极通过第二气体供给管线供给。 在反应区域上设置衬底保持器。 （附图标记）（AA）第一气体; （BB）二气; （CC）第一方向; （DD）第二方向; （EE）第三方向
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公开(公告)号：KR1020110056787A
公开(公告)日：2011-05-31
申请号：KR1020090113256
申请日：2009-11-23
Applicant: 주성엔지니어링(주)
IPC: H01L21/205 , H01L21/3065
CPC classification number: H01J37/32568 , H01J37/3244
Abstract: PURPOSE: An apparatus for treating a substrate is provided to improve thin film deposition and the uniformity of etching the thin film by distributing electromagnetic field evenly. CONSTITUTION: In a apparatus for treating a substrate, a reaction chamber(112) is composed of a lid(112a) and a body(112b). A plasma source electrode(114) is formed on the surface of the lid corresponding to the inside of the reaction chamber. The gas injection unit(124) is installed in the lid between a plurality of plasma source electrodes. An integration circuit board is arranged on the lid corresponding to the outside of the reaction chamber. A substrate mounting unit(122) is arranged in a reaction space.
Abstract translation: 目的：提供一种用于处理基板的设备，以通过均匀分布电磁场来改善薄膜沉积和蚀刻薄膜的均匀性。 构成：在用于处理基板的装置中，反应室（112）由盖（112a）和主体（112b）构成。 在对应于反应室内部的盖的表面上形成等离子体源电极（114）。 气体注入单元（124）安装在多个等离子体源电极之间的盖中。 集成电路板布置在对应于反应室外部的盖上。 衬底安装单元（122）布置在反应空间中。
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公开(公告)号：KR101693673B1
公开(公告)日：2017-01-09
申请号：KR1020100059605
申请日：2010-06-23
Applicant: 주성엔지니어링(주)
IPC: H05H1/34 , H05H1/46 , H01L21/3065
CPC classification number: C23C16/45565 , C23C16/45574 , C23C16/509 , H01J37/32091 , H01J37/3244
Abstract: 본발명은공정가스가공급되고플라즈마가방전되는방전부가설치된가스분배수단및 이를포함한기판처리장치에관한것으로, 기판처리장치는챔버리드및 챔버몸체의결합에의해반응공간을제공하는공정챔버; 상기챔버리드와결합되고제 1 측면을가지는다수의플라즈마소스전극; 상기챔버리드와결합되고상기다수의플라즈마소스전극과교번적으로배열되며상기제 1 측면과대향하는제 2 측면을가지는다수의플라즈마접지전극; 및상기다수의플라즈마소스및 접지전극중 하나에각각형성되고, 제 1 공정가스를수용하는제 1 수용공간, 상기제 1 측면에형성되어상기제 1 수용공간과유체연통되는다수의제 1 관통홀, 및상기다수의제 1 관통홀과유체연통되고플라즈마방전공간을제공하는매트릭스형태의제 1 방전부를포함하는다수의제 1 가스분배수단;을포함하는것을특징으로한다.
Abstract translation: 一种用于基板处理装置的气体分配装置，包括具有第一侧表面的多个等离子体源电极; 多个等离子体接地电极，其具有与所述第一侧面对置的第二侧面，所述多个等离子体接地电极与所述多个等离子体源电极交替配置; 以及设置在每个等离子体源电极处并包括第一空间的第一气体提供部分，与第一空间连通的多个第一通孔，用于在多个等离子体源极之一之间提供第一处理气体， 的多个等离子体接地电极，以及在第一侧表面处的第一排出部。
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公开(公告)号：KR101587054B1
公开(公告)日：2016-01-21
申请号：KR1020090113256
申请日：2009-11-23
Applicant: 주성엔지니어링(주)
IPC: H01L21/205 , H01L21/3065
Abstract: 본발명은리드상에설치되는플라즈마의소스전극및 접지전극에가스분사수단을설치한기판처리장치에관한것으로, 기판처리장치는리드및 몸체가결합하여반응공간을제공하는공정챔버; 상기공정챔버내부와대응되는상기리드의표면에형성되는다수의플라즈마소스전극; 상기다수의플라즈마소스전극에전력을인가하는 RF전원; 상기공정챔버외부와대응되는상기리드의상부에위치하고, 상기 RF전원과상기다수의플라즈마소스전극각각을연결시키는피딩라인이집적되어있는배선집적기판; 및상기반응공간에위치하고기판이안치되는기판안치수단;을포함하는것을특징으로한다.
Abstract translation: 处理腔室的是，本发明是通过安装气体注入，以提供基板处理跳动簧片和所述主体的所述反应空间被耦合到设备装置到源电极和等离子体，它安装在引线的接地电极; 形成的多个的对应于处理腔室的内部的引线的表面上的等离子体源电极的; 用于向多个等离子体源电极施加功率的RF功率源; 整体线路板位于对应于处理腔室的外部盖的上部，所述馈电线被集成连接RF功率源和所述多个分别等离子体源电极的; 并且放置在反应空间中并且衬底放置在其上的衬底搁置装置。
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