公开(公告)号：KR1020100027278A

公开(公告)日：2010-03-11

申请号：KR1020080086126

申请日：2008-09-02

Applicant: 충북대학교 산학협력단

Inventor： 김남수 ,  최지원

IPC: H03M1/12 ,  H03M1/16

CPC classification number: H03M1/16 ,  H03M1/002 ,  H03M1/18 ,  H03M2201/62 ,  H03M2201/814

Abstract: PURPOSE: An analog to digital converter using threshold voltage variation is provided to simplify a configuration of a circuit by performing a comparison operation with a simple structure. CONSTITUTION: A switching inverter array(120) is comprised of a plurality of CMOS inverters. The switching inverter array receives an analog input voltage as an input signal. An encoder(150) generates a digital signal by encoding the output signals of the CMOS inverters. Each CMOS inverter has a different switching threshold voltage. The CMOS inverters is comprised of a PMOS transistor and an NMOS transistor including a gate insulation layer. The PMOS transistor and the NMOS transistor have different thicknesses according to each CMOS inverter.

Abstract translation: 目的：提供使用阈值电压变化的模数转换器，通过简单的结构执行比较操作来简化电路的配置。 构成：开关逆变器阵列（120）由多个CMOS反相器构成。 开关逆变器阵列接收模拟输入电压作为输入信号。 编码器（150）通过对CMOS反相器的输出信号进行编码来产生数字信号。 每个CMOS反相器具有不同的开关阈值电压。 CMOS反相器由PMOS晶体管和包括栅极绝缘层的NMOS晶体管组成。 根据每个CMOS反相器，PMOS晶体管和NMOS晶体管具有不同的厚度。