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1.发明公开
公开(公告)号：KR1020090093148A
公开(公告)日：2009-09-02
申请号：KR1020080018506
申请日：2008-02-28
Applicant: 포항공과대학교 산학협력단
IPC: C23C16/18 , C23C16/06 , C23C16/40 , C23C16/455
Abstract: A phase controlling method between ruthenium thin film and conductive ruthenium oxide thin film by controlling the deposition temperature in atomic layer deposition is provided to improve device character and convenience of device fabrication by selectively changing phase between ruthenium layers or ruthenium oxide thin films. A phase controlling method between ruthenium thin film and conductive ruthenium oxide thin film by controlling the deposition temperature in atomic layer deposition comprises following steps. The ruthenium precursor vaporized on a heated substrate is injected into a reaction chamber with the argon gas for 2 seconds. A bubbler filled with the precursor is x with is heated at 65°C. The temperature of a feeding line is maintained at 10 ~ 15°C temperature higher than the bubbler. The flow rate of the argon gas is maintained as 20 sccm. The argon purging gas of 50 sccm is injected into the chamber for 2 seconds. The oxygen gas of 10 sccm is injected into the chamber for 2 seconds. The argon purging gas of 50 sccm is injected into the camber for 2 seconds. The precursor of the ruthenium is the Ru2. The substrate temperature is maintained at 300±25°C when depositing the ruthenium metal thin film.
Abstract translation: 提供了通过控制原子层沉积中的沉积温度的钌薄膜和导电氧化钌薄膜之间的相位控制方法，以通过选择性地改变钌层或氧化钌薄膜之间的相位来改善器件制造的器件特性和便利性。 通过控制原子层沉积中的沉积温度，钌薄膜和导电氧化钌薄膜之间的相位控制方法包括以下步骤。 在加热的基板上蒸发的钌前驱体用氩气注入反应室2秒钟。 填充有前体的起泡器是x在65℃下加热。 进料管的温度保持在比起泡器高10〜15℃的温度。 氩气的流量保持为20sccm。 将50sccm的氩气吹扫气体注入室2秒钟。 将10sccm的氧气注入室2秒钟。 将50sccm的氩气吹扫气体注入弧度2秒钟。 钌的前体是Ru2。 当沉积钌金属薄膜时，衬底温度保持在300±25℃。
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公开(公告)号：KR1020140001355A
公开(公告)日：2014-01-07
申请号：KR1020120068631
申请日：2012-06-26
Applicant: 주식회사 엘지화학 , 포항공과대학교 산학협력단
Abstract: The present invention relates to a stirrer for a slurry mixing process. The stirrer includes a mixing container which has an internal space for accepting slurry and is rotationally installed, a first rotating member which is installed to reciprocate within the mixing container, and a second rotating member which is located on the outside of the first rotating member within the mixing container and allows rotational motion and relative motion to the central axis of the mixing container.
Abstract translation: 本发明涉及一种用于浆料混合过程的搅拌器。 搅拌器包括一个混合容器，该混合容器具有用于接收浆料的内部空间并被旋转地安装，第一旋转构件安装成在混合容器内往复运动，第二旋转构件位于第一旋转构件的外侧， 混合容器并允许旋转运动和相对于混合容器的中心轴的运动。
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3.发明授权
公开(公告)号：KR100991861B1
公开(公告)日：2010-11-04
申请号：KR1020080101003
申请日：2008-10-15
Applicant: 포항공과대학교 산학협력단
Abstract: 본 발명은 자기조립 블록공중합체 나노템플레이트를 실리콘 기판의 산화막 상에 형성하고 산화막을 건식식각하여 블록공중합체 나노템플레이트의 나노패턴을 산화막에 이전한 후, 나노패턴이 이전된 실리콘 산화막을 이용한 실리콘 게르마늄의 선택적 에피 성장을 통해 균일하고 정렬도가 높은 나노점을 대면적으로 제조할 수 있는 실리콘 게르마늄 나노점의 제조방법에 관한 것이다.
본 발명에 따라 형성된 나노점은 메모리 소자, 광소자 등에 직접적으로 이용할 수 있다.
나노점, 실리콘 게르마늄, 블록공중합체, 선택적 에피 성장-
公开(公告)号：KR1020100059466A
公开(公告)日：2010-06-04
申请号：KR1020080118250
申请日：2008-11-26
Applicant: 현대자동차주식회사 , 포항공과대학교 산학협력단
CPC classification number: B01J23/42 , B01D53/565 , B01D53/8628 , B01J23/04 , B01J23/34 , B01J23/75 , B01J2523/25 , B01J2523/3712
Abstract: PURPOSE: NOx storage - reducing catalyst is provided to have relatively high storage component after deterioration or sulfation. CONSTITUTION: A NOx storage - reducing catalyst comprises 1 ~ 5 weight% of transition metal selected from platinum, cobalt and manganese, 2 ~ 30 weight% of a Ba-K-Ce storage component, and 65 ~ 95 weight% of alumina. The Ba-K-Ce 3-componet storage component comprises 0.025 ~ 0.35 : 0.2 ~ 0.95 : 0.025 ~ 0.45 weight ratio of Ba, K Ce and BET non-surface area of the alumina is 50 m/g ~ 300 m/g.
Abstract translation: 目的：NOx储存 - 还原催化剂在劣化或硫酸化后具有较高的储存成分。 构成：NOx储存还原催化剂含有1〜5重量％的选自铂，钴和锰的过渡金属，2〜30重量％的Ba-K-Ce储存组分和65〜95重量％的氧化铝。 Ba-K-Ce 3组分储存组分包含Ba，K Ce和BET的0.025〜0.35：0.2〜0.95：0.025〜0.45重量比，氧化铝的BET表面积为50 m / g〜300 m / g。
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公开(公告)号：KR100892520B1
公开(公告)日：2009-04-10
申请号：KR1020070115797
申请日：2007-11-14
Applicant: 현대자동차주식회사 , 포항공과대학교 산학협력단
CPC classification number: B01J23/58 , B01D53/94 , B01J23/462 , B01J35/1014 , B01J35/1019
Abstract: A ruthenium and potassium contained nitric oxide storage and reduction catalyst is provided to decrease the amount of use of precious metals by adding the ruthenium in the catalyst and to offer a high storage property. A ruthenium and potassium contained nitric oxide storage and reduction catalyst is characterized by dipping precious metals of 0.1 ~ 3 weight% as active components about an alumina(Al2O3) support. The precious metals are ruthenium of 0.1 ~ 10 weight%, potassium of 5 ~ 30 weight%, platinum, palladium, and rhodium. An alumina carrier includes a BET specific surface area of 50 ~ 350 m / g range.
Abstract translation: 提供了含有钌和钾的一氧化氮储存和还原催化剂，以通过在催化剂中加入钌来降低贵金属的使用量并提供高储存性能。 含有钌和钾的一氧化氮储存和还原催化剂的特征在于以氧化铝（Al 2 O 3）载体作为活性组分浸渍0.1〜3重量％的贵金属。 贵金属为0.1〜10重量％的钌，5〜30重量％的钾，铂，钯和铑。 氧化铝载体包括BET比表面积为50〜350m / g的范围。
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Patent Agency Ranking6.发明公开실리콘 게르마늄의 선택적 에피 성장과 양극 산화 알루미늄나노 템플레이트를 이용한 실리콘 게르마늄 나노선의 제조방법 및 이를 이용한 반도체 소자 无效用于标记纳米级阳极氧化铝纳米粒子的选择性外延生长的识别方法和使用其的半导体元件
公开(公告)号：KR1020100023493A
公开(公告)日：2010-03-04
申请号：KR1020080082292
申请日：2008-08-22
Applicant: 포항공과대학교 산학협력단
CPC classification number: H01L21/02639 , H01L21/02532 , H01L21/02603 , H01L21/0262
Abstract: PURPOSE: A silicon-germanium nano-wire manufacturing method and a semiconductor device thereof are provided to prevent the inflow of a metallic impurity by generating a nano wire by a selective epitaxial growth of a silicon-germanium. CONSTITUTION: A nano template forming a plurality of nano holes with a predetermined shape is manufactured on a silicon substrate. The nano template is composed of an aluminum oxide formed by an anodizing method. The resistant layer is removed by etching the nano template hole floor. A silicon-germanium is formed from the floor of the nano template hole. The nano template is removed.
Abstract translation: 目的：提供硅 - 锗纳米线制造方法及其半导体器件，以通过硅 - 锗的选择性外延生长产生纳米线来防止金属杂质的流入。 构成：在硅衬底上制造形成具有预定形状的多个纳米孔的纳米模板。 纳米模板由通过阳极氧化法形成的氧化铝组成。 通过蚀刻纳米模板孔底层去除耐蚀层。 从纳米模板孔的底部形成硅锗。 纳米模板被去除。
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公开(公告)号：KR101527547B1
公开(公告)日：2015-06-09
申请号：KR1020120068631
申请日：2012-06-26
Applicant: 주식회사 엘지화학 , 포항공과대학교 산학협력단
Abstract: 본발명은슬러리를수용하기위한내부공간을구비하고자전가능하게설치된교반용기; 상기교반용기의내부에서상하왕복운동가능하게설치된제1 회전부재; 및상기교반용기의내부에서상기제1 회전부재의바깥쪽에위치하고, 자전운동과상기교반용기의중심축에대한상대운동이가능하게설치된제2 회전부재;를포함하는슬러리믹싱공정용교반기를개시한다.
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公开(公告)号：KR100993686B1
公开(公告)日：2010-11-10
申请号：KR1020080118250
申请日：2008-11-26
Applicant: 현대자동차주식회사 , 포항공과대학교 산학협력단
Abstract: 본 발명은 기존 Ba 또는 K 을 포함한 NOx 흡장-환원 촉매(NOx storage-reduction catalyst)의 취약점인 촉매의 내열성 및 내유황성을 개선하기 위한 Ba-K-Ce 삼원계 흡장물질을 포함하는 NOx 흡장-환원 촉매에 관한 것으로서, 이를 더욱 자세하게 설명하면, 백금(Pt), 코발트(Co) 및 망간(Mn) 중에서 선택된 전이금속; Ba-K-Ce 삼원계 흡장물질; 및 알루미나(alumina, Al
2 O
3 );를 포함하고 있는 것을 그 특징으로 한다. 이러한 본 발명의 흡장-환원 촉매는 내열성 및 내유황성이 우수하기 때문에 대표적인 NOx 흡장 촉매인 기존의 Pt/Ba/Al
2 O
3 NOx 흡장 촉매에 비해 열화 또는 황 피독(sulfation) 후에도 상대적으로 높은 촉매의 흡장 특성을 갖는다.
자동차 촉매, 질소산화물, 흡장-환원 촉매, 삼원계-
9.发明公开실리콘 게르마늄의 선택적 에피 성장과 양극 산화 알루미늄나노 템플레이트를 이용한 실리콘 게르마늄 나노점의 제조방법 및 반도체 소자 无效通过在阳极氧化铝纳米微粒和半导体元素上的选择性外源生长标记纳米结构的制造方法
公开(公告)号：KR1020100023496A
公开(公告)日：2010-03-04
申请号：KR1020080082299
申请日：2008-08-22
Applicant: 포항공과대학교 산학협력단
CPC classification number: H01L21/02639 , H01L21/02532 , H01L21/02603 , H01L21/0262
Abstract: PURPOSE: A manufacturing method of a silicon-germanium nanodot and a semiconductor device thereof are provided to manufacture a large area silicon-germanium nanodot by forming a nanowire using a nano template. CONSTITUTION: A nano template forming a nano hole on a silicon substrate is manufactured. A resistant layer is removed by etching the nano template hole floor. A silicon-germanium is selectively epitaxial-grown from the floor of the nano template hole. The nano template is removed. The epitaxial-growth of the silicon-germanium is operated by the chemical vapor deposition method.
Abstract translation: 目的：提供硅 - 锗纳米点及其半导体器件的制造方法，通过使用纳米模板形成纳米线来制造大面积的硅 - 锗纳米点。 构成：制造在硅衬底上形成纳米孔的纳米模板。 通过蚀刻纳米模板孔底层去除耐层。 从纳米模板孔的底部选择性地外延生长硅 - 锗。 纳米模板被去除。 硅 - 锗的外延生长通过化学气相沉积法进行。
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10.发明公开
公开(公告)号：KR1020100041946A
公开(公告)日：2010-04-23
申请号：KR1020080101003
申请日：2008-10-15
Applicant: 포항공과대학교 산학협력단
CPC classification number: H01L21/02639 , H01L21/02532 , H01L21/02601
Abstract: PURPOSE: A method for manufacturing nano-dots and a semiconductor device using the same are provided to adjust the size, the shape, the density and the height of the nano-dots by controlling an operation condition for the self-assembly of a block copolymer and the time for the epitaxial growth of silicon germanium. CONSTITUTION: An oxide layer is formed on a silicon substrate. A first nano-template with a plurality of holes is formed on the oxide layer by the self-assembly of a block copolymer. The nano-pattern of the nano-template is transferred to the oxide layer in order to form a second nano-template. The first nano-template is removed. The silicon substrate is exposed through holes of the second nano-template. Silicon germanium is grown by epitaxial growing. The second nano-template is removed.
Abstract translation: 目的：提供一种制造纳米点的方法和使用该方法的半导体器件，通过控制嵌段共聚物的自组装操作条件来调节纳米点的尺寸，形状，密度和高度 以及硅锗外延生长的时间。 构成：在硅衬底上形成氧化物层。 通过嵌段共聚物的自组装，在氧化物层上形成具有多个孔的第一纳米模板。 将纳米模板的纳米图案转移到氧化物层以形成第二纳米模板。 第一个纳米模板被去除。 硅衬底通过第二纳米模板的孔露出。 硅锗通过外延生长生长。 第二个纳米模板被去除。
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