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    유기물을 활성층으로하는 비휘발성 메모리 소자
    2.
    发明公开
    유기물을 활성층으로하는 비휘발성 메모리 소자 失效
    包含有机材料的非易失性存储器件作为活性层

    公开(公告)号：KR1020100093399A

    公开(公告)日：2010-08-25

    申请号：KR1020090012556

    申请日：2009-02-16

    Applicant: 포항공과대학교 산학협력단

    Inventor： 이문호 ,  이택준 ,  최승철 ,  박삼대 ,  김동민 ,  함석규 ,  김경태

    IPC: H01L51/30 ,  H01L27/28 ,  H01L27/115

    CPC classification number: H01L51/0078 ,  H01L27/288 ,  H01L51/0034 ,  H01L2251/30

    Abstract: PURPOSE: A non-volatile memory device setting organic compound to an active layer is provided to show current-voltage switching phenomenon and to realize a switching characteristic with large on/off rate in low power. CONSTITUTION: An insulating layer(2) is formed on a substrate(1). A bottom electrode(3) is formed on the insulating layer. An organic compound active layer(4) is formed on the bottom electrode. The organic compound active layer is connected to a electrode and a diode. An upper electrode(5) is formed on the organic compound active layer.

    Abstract translation: 目的：提供将有机化合物设置为有源层的非易失性存储器件，以显示电流 - 电压切换现象，并实现低功率大开/关速率的开关特性。 构成：在基板（1）上形成绝缘层（2）。 在绝缘层上形成底部电极（3）。 在底部电极上形成有机化合物活性层（4）。 有机化合物活性层连接到电极和二极管。 在有机化合物活性层上形成上电极（5）。

    공액고분자를 활성층으로 하는 메모리 소자
    7.
    发明公开
    공액고분자를 활성층으로 하는 메모리 소자 失效
    包含聚合物作为活性层的记忆装置

    公开(公告)号：KR1020110029725A

    公开(公告)日：2011-03-23

    申请号：KR1020090087528

    申请日：2009-09-16

    Applicant: 포항공과대학교 산학협력단

    Inventor： 이문호 ,  박삼대 ,  이택준 ,  함석규 ,  김진철 ,  김동민 ,  권원상 ,  김경태 ,  고용기

    IPC: C08G61/12 ,  C08G61/02 ,  C08L65/00 ,  H01L27/28

    Abstract: PURPOSE: A memory device containing conjugated polymers as active layer is provided to ensure excellent performance using conjugated polymers as active layer which causes switching phenomenon at low operation voltage and on/off voltage states. CONSTITUTION: A conjugated polymer is represented by chemical formula I. In chemical formula I, R is C1-20 alkyl group, and Z is an aromatic or aliphatic derivate selected from the chemical formula A, wherein R' and R'' are C1-20 alkyl group and n is a repeating unit as an integer. A polymer memory device includes a lower electrode, an organic active layer, and an upper electrode.

    Abstract translation: 目的：提供含有共轭聚合物作为活性层的记忆装置，以确保使用共轭聚合物作为活性层的优异性能，其在低操作电压和开/关电压状态下引起切换现象。 构成：共轭聚合物由化学式I表示。在化学式I中，R为C 1-20烷基，Z为选自化学式A的芳族或脂族衍生物，其中R'和R“为C1- 20烷基，n为整数的重复单元。 聚合物存储装置包括下电极，有机活性层和上电极。

    트라이 페닐 아민을 주쇄로 하는 폴리이미드 고분자, 이의 제조방법 및 이를 이용하는 메모리 소자
    8.
    发明公开
    트라이 페닐 아민을 주쇄로 하는 폴리이미드 고분자, 이의 제조방법 및 이를 이용하는 메모리 소자 失效
    带有三苯胺的聚酰亚胺，其制备方法和包含聚合物的产品

    公开(公告)号：KR1020100095322A

    公开(公告)日：2010-08-30

    申请号：KR1020090014549

    申请日：2009-02-20

    Applicant: 포항공과대학교 산학협력단

    Inventor： 이문호 ,  박삼대 ,  김동민 ,  김진철 ,  최준만 ,  이택준 ,  함석규 ,  권원상 ,  김경태

    IPC: C08G73/10 ,  C08L79/08 ,  H01L27/10

    Abstract: PURPOSE: A polyimide polymer including a backbone of triphenylamine is provided to enhance thermal stability of a polymer active layer which is the most important part of a non-volatile memory device, to have various memory properties, to be used in the non-volatile memory device. CONSTITUTION: A polyimide polymer including a backbone of triphenylamine is marked by chemical formula 1. In chemical formula 1, X is -CH-, N, or P and Y is a carboxyl group or a hydroxyl group. A method for manufacturing a polymer memory device comprise a step of forming an active layer on a lower electrode which is formed on a substrate and a step of forming an upper electrode to contact with the active layer. The active layer is comprised of the polyimide polymer.

    Abstract translation: 目的：提供一种包含三苯基胺主链的聚酰亚胺聚合物，以提高作为非挥发性记忆装置最重要部分的聚合物活性层的热稳定性，具有各种记忆特性，用于非挥发性记忆 设备。 构成：包含三苯胺主链的聚酰亚胺聚合物由化学式1表示。在化学式1中，X是-CH-，N或P，Y是羧基或羟基。 聚合物存储装置的制造方法包括在形成在基板上的下电极上形成有源层的步骤，以及形成与活性层接触的上电极的工序。 活性层由聚酰亚胺聚合物组成。

    폴리이미드 고분자를 활성층으로하는 비휘발성 메모리 소자
    9.
    发明公开
    폴리이미드 고분자를 활성층으로하는 비휘발성 메모리 소자 无效
    包含聚酰胺作为活性层的非易失性存储器件

    公开(公告)号：KR1020100079604A

    公开(公告)日：2010-07-08

    申请号：KR1020080138138

    申请日：2008-12-31

    Applicant: 포항공과대학교 산학협력단

    Inventor： 이문호 ,  김경태 ,  박삼대 ,  김동민 ,  함석규 ,  이택준

    IPC: C09K11/06 ,  H01L51/00 ,  C08G73/10 ,  H05B33/14

    Abstract: PURPOSE: A non-volatile memory device is provided to secure the current-voltage switching phenomenon of the device, and to simplify the manufacturing process of the memory device. CONSTITUTION: A non-volatile memory device uses a polyimide polymer containing a carbazole or carbamyl group as a branch, as an organic active layer. The polyimide polymer is marked with chemical formula 1. In the chemical formula 1, R1, R2, R3, R4, R5, and R6 are hydrogen, an alkyl group, an aryl group, a heteroaryl group, an aralkyl group, or a cycloalkyl group. A is either a carbazole group or a carbamyl group. N is an integer, and a repeating unit. A non-volatile memory device comprises a bottom electrode, an organic active layer, and an upper electrode.

    Abstract translation: 目的：提供非易失性存储器件，以确保器件的电流 - 电压切换现象，并简化存储器件的制造过程。 构成：非挥发性记忆装置使用含有咔唑或氨基甲酰基作为分支的聚酰亚胺聚合物作为有机活性层。 在化学式1中，R1，R2，R3，R4，R5和R6是氢，烷基，芳基，杂芳基，芳烷基或环烷基 组。 A是咔唑基或氨基甲酰基。 N为整数，重复单元。 非易失性存储器件包括底部电极，有机活性层和上部电极。

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