公开(公告)号：KR100329206B1

公开(公告)日：2002-03-22

申请号：KR1019990027808

申请日：1999-07-09

Applicant: 학교법인연세대학교

Inventor： 황정남 ,  조만호 ,  고대홍

IPC: H01L21/20

Abstract: 본발명은기판과성장시키고자하는박막사이의계면층을개입하여이용하여산화박막혹은금속박막을결정성장시키는방법에관련된것이다. 본발명에서는실리콘기판위에 3~8 층정도의산화실리콘으로이루어진계면층을이용하여박막을형성함으로써, 실리콘기판의결정성을그대로따르면서, 실리사이드의생성을억제하여양질의박막을성장하는방법을제공하고있다.

公开(公告)号：KR1020010009445A

公开(公告)日：2001-02-05

申请号：KR1019990027808

申请日：1999-07-09

Applicant: 학교법인연세대학교

Inventor： 황정남 ,  조만호 ,  고대홍

IPC: H01L21/20

Abstract: PURPOSE: A method for forming a thin film using an interface layer is provided to be capable of prohibiting generation of silicide. CONSTITUTION: An interface layer(111) including oxide silicon is formed on the surface of a substrate(101) including silicon. Gas of deposition material is injected to grow a thin film(103) including the deposition material on the interface layer(111), with the substrate at a high vacuum state. At this time, the interface layer(111) functions as a buffer for controlling interactive reaction forces of the substrate(101) and the thin film(103).

Abstract translation: 目的：提供一种使用界面层形成薄膜的方法，以能够禁止产生硅化物。 构成：在包括硅的衬底（101）的表面上形成包括氧化物硅的界面层（111）。 注入沉积材料的气体以在基板处于高真空状态下生长包含沉积材料的界面层（111）上的薄膜（103）。 此时，界面层（111）作为用于控制基板（101）和薄膜（103）的交互反作用力的缓冲器起作用。