公开(公告)号：KR100329206B1

公开(公告)日：2002-03-22

申请号：KR1019990027808

申请日：1999-07-09

Applicant: 학교법인연세대학교

Inventor： 황정남 ,  조만호 ,  고대홍

IPC: H01L21/20

Abstract: 본발명은기판과성장시키고자하는박막사이의계면층을개입하여이용하여산화박막혹은금속박막을결정성장시키는방법에관련된것이다. 본발명에서는실리콘기판위에 3~8 층정도의산화실리콘으로이루어진계면층을이용하여박막을형성함으로써, 실리콘기판의결정성을그대로따르면서, 실리사이드의생성을억제하여양질의박막을성장하는방법을제공하고있다.

公开(公告)号：KR1020040070597A

公开(公告)日：2004-08-11

申请号：KR1020030006770

申请日：2003-02-04

Applicant: 학교법인연세대학교

Inventor： 임성일 ,  황정남 ,  최진문

IPC: H05B33/26

CPC classification number: H01L51/5092

Abstract: PURPOSE: An organic light emitting device is provided to achieve improved efficiency of light emission by using NaCl as an electron injection medium. CONSTITUTION: An organic light emitting device comprises a cathode, an electron injection medium, an electron transport layer, a hole transport layer, and an anode. The electron injection medium is NaCl having a thickness of 1.0±0.4nm. Improved efficiency of light emission is accomplished and manufacturing cost is reduced by using NaCl rather than LiF as an electron injection medium.

Abstract translation: 目的：提供一种有机发光装置，通过使用NaCl作为电子注入介质来实现发光效率的提高。 构成：有机发光器件包括阴极，电子注入介质，电子传输层，空穴传输层和阳极。 电子注入介质是厚度为1.0±0.4nm的NaCl。 通过使用NaCl而不是LiF作为电子注入介质，实现了提高的发光效率并降低了制造成本。

公开(公告)号：KR1020010009445A

公开(公告)日：2001-02-05

申请号：KR1019990027808

申请日：1999-07-09

Applicant: 학교법인연세대학교

Inventor： 황정남 ,  조만호 ,  고대홍

IPC: H01L21/20

Abstract: PURPOSE: A method for forming a thin film using an interface layer is provided to be capable of prohibiting generation of silicide. CONSTITUTION: An interface layer(111) including oxide silicon is formed on the surface of a substrate(101) including silicon. Gas of deposition material is injected to grow a thin film(103) including the deposition material on the interface layer(111), with the substrate at a high vacuum state. At this time, the interface layer(111) functions as a buffer for controlling interactive reaction forces of the substrate(101) and the thin film(103).

Abstract translation: 目的：提供一种使用界面层形成薄膜的方法，以能够禁止产生硅化物。 构成：在包括硅的衬底（101）的表面上形成包括氧化物硅的界面层（111）。 注入沉积材料的气体以在基板处于高真空状态下生长包含沉积材料的界面层（111）上的薄膜（103）。 此时，界面层（111）作为用于控制基板（101）和薄膜（103）的交互反作用力的缓冲器起作用。

公开(公告)号：KR1020000074993A

公开(公告)日：2000-12-15

申请号：KR1019990019288

申请日：1999-05-27

Applicant: 학교법인연세대학교

Inventor： 황정남 ,  조성진 ,  김기원

IPC: H01L21/20

Abstract: PURPOSE: A surface deposition system is provided to uniformly deposit a thin film on a large surface by using a physical deposition method such as a molecular beam epitaxy(MBE) deposition method or ionized cluster beam deposition(ICBD) method. CONSTITUTION: A surface deposition system comprises the first and second axes, the first and second driving units(175,185), a moving unit, a source and a second-dimensional substrate. The first and second axes form a plane coordinate system, separated from each other. The first and second driving units are capable of performing an operation selected from a direct motion, a reciprocating motion and an oscillatory motion with reference to the first and second axes. The moving unit is capable of moving on an axis selected from the first and second axes. The source emits a depositing material, established in the moving unit. The second-dimensional substrate corresponds to a second-dimensional space formed by the first and second axes, separated a predetermined interval from the source.

Abstract translation: 目的：提供表面沉积系统，通过使用分子束外延（MBE）沉积方法或电离聚束束沉积（ICBD）方法的物理沉积方法在大的表面上均匀地沉积薄膜。 构成：表面沉积系统包括第一和第二轴，第一和第二驱动单元（175,185），移动单元，源和第二维基板。 第一和第二轴形成彼此分离的平面坐标系。 第一和第二驱动单元能够参照第一和第二轴执行从直接运动，往复运动和振荡运动中选择的操作。 移动单元能够在从第一和第二轴线选择的轴上移动。 源发出沉积材料，建立在移动单元中。 第二维基板对应于由第一轴和第二轴形成的第二维空间，与源相隔预定间隔。

公开(公告)号：KR100329207B1

公开(公告)日：2002-03-22

申请号：KR1019990019288

申请日：1999-05-27

Applicant: 학교법인연세대학교

Inventor： 황정남 ,  조성진 ,  김기원

IPC: H01L21/20

Abstract: 본발명은 ICBD 혹은 MBE와같은물리적방법을이용한물질증착방법에있어서, 대면적증착방법및 그시스템에관련된것이다. 본발명은증착물질을담은소스를 2차원을이루는서로직교하는두 개의좌표축상에서임의로이동하면서상기소스와일정거리떨어져설치된기판위에박막을증착하는대면적증착법을제공한다. 따라서, 본발명은증착물질을담은소스와, 상기소스에서분사된증착물질이임의의 2차원공간의모든위치를지적할수 있는좌표계와, 상기좌표축상에서상기소스를이동시킬수있는구동수단을포함하는대면적증착시스템을제공한다.