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    고집적 비휘발성 메모리용 상변화 재료
    1.
    发明授权
    고집적 비휘발성 메모리용 상변화 재료 有权
    고집적비휘발성메모리용상변화재료

    公开(公告)号：KR100651657B1

    公开(公告)日：2006-12-01

    申请号：KR1020050056892

    申请日：2005-06-29

    Applicant: 한국과학기술연구원

    Inventor： 정병기 ,  정증현 ,  강대환 ,  정한주 ,  이택성 ,  김인호 ,  김원목 ,  이경석

    IPC: H01L27/10

    Abstract: A phase change material for a high-integrated non-volatile memory is provided to reduce writing current and heat interference between cells by reducing a melting temperature and improving a crystallization temperature and by improving a joule heating characteristic and a heat radiation characteristic of a memory material. A phase change material is a substitutional solid solution that has a congruent melting composition or eutectic melting composition having a minimum melting temperature in an equilibrium state diagram or a composition in which the composition displacement of an individual constituting element has an atomic mole fraction of plus and minus 0.15 or lower with respect to the congruent melting composition of the eutectic melting composition. The phase change material is formed by adding at least one non-metal element to a base material whose melting temperature is not higher than 600 deg.C such that the non-metal element is selected from B, C, N and O. The base material has Sb-Te binary alloy as a main component and is a solid solution to which at least one element selected from Ge, Ag, In and Ga is added.

    Abstract translation: 提供用于高集成度非易失性存储器的相变材料以通过降低熔化温度和改善结晶温度并通过改善存储材料的焦耳加热特性和热辐射特性来减小单元之间的写入电流和热干扰 。 相变材料是具有在平衡状态图中具有最小熔化温度的一致熔融组成或共晶熔融组成的组合物置换固体溶液，或者其中组成元素的组成置换具有正的原子摩尔分数的组合物和 相对于共晶熔融组合物的一致熔融组成，减少0.15或更低。 所述相变材料通过向熔化温度不高于600℃的基材添加至少一种非金属元素而形成，使得所述非金属元素选自B，C，N和O.所述基材 材料具有Sb-Te二元合金作为主要成分，并且是添加了选自Ge，Ag，In和Ga中的至少一种元素的固溶体。

    계면 제어층을 포함하는 비휘발성 전기적 상변화 메모리소자 및 이의 제조방법
    3.
    发明授权
    계면 제어층을 포함하는 비휘발성 전기적 상변화 메모리소자 및 이의 제조방법 有权
    包含界面控制层的非易失性电相变存储器件及其制备方法

    公开(公告)号：KR100767333B1

    公开(公告)日：2007-10-17

    申请号：KR1020060046409

    申请日：2006-05-24

    Applicant: 한국과학기술연구원 ,  재단법인서울대학교산학협력재단

    Inventor： 강대환 ,  김인호 ,  정병기 ,  정증현 ,  이택성 ,  김원목 ,  김기범

    IPC: H01L27/115 ,  H01L21/8247

    CPC classification number: H01L45/1675 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  G11C13/0004

    Abstract: A non-volatile electrical phase-change memory device and a manufacturing method thereof are provided to make a uniform temperature and phase distribution within a phase-change material layer by reducing contact resistance between phase change material and electrode material. A first interlayer dielectric(21), a bottom electrode layer(22), a second interlayer dielectric(23), a phase-change material layer(24) and a top electrode layer(25) are sequentially formed on a silicon substrate(20). A contact hole(23') penetrates the second interlayer dielectric to connect the phase-change material layer with the bottom electrode layer, and is filled with phase change material or bottom electrode material. An interfacial control layer(23") is formed at an interface between the phase change material and the bottom electrode material.

    Abstract translation: 提供了一种非易失性电相变存储器件及其制造方法，通过降低相变材料和电极材料之间的接触电阻，使相变材料层内的温度和相位分布均匀。 在硅衬底（20）上依次形成第一层间电介质（21），底电极层（22），第二层间电介质（23），相变材料层（24）和顶电极层（25） ）。 接触孔（23'）穿透第二层间电介质以将相变材料层与底部电极层连接，并填充有相变材料或底部电极材料。 在相变材料和底部电极材料之间的界面处形成界面控制层（23“）。

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