公开(公告)号：KR1020040021459A

公开(公告)日：2004-03-10

申请号：KR1020020053306

申请日：2002-09-04

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  한석희 ,  장준연 ,  김희중 ,  이정미 ,  명재민

IPC: H01L43/00 ,  C30B29/38 ,  H01F10/193

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/404 ,  H01F10/193 ,  H01F10/3213 ,  H01F41/30 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66984 ,  H01L33/40 ,  H01L43/08 ,  H01L43/10

Abstract: PURPOSE: A room temperature operating ferromagnetic semiconductor fabricated by a PEMBE(Plasma-enhanced Molecular Beam Epitaxy) method and an electronic device using the same are provided to apply the magnetic semiconductor to a spin electron device by obtaining a characteristic of the magnetic semiconductor in the room temperature. CONSTITUTION: A room temperature operating ferromagnetic semiconductor fabricated by a PEMBE method includes a compound semiconductor of the third to the fifth group. The compound semiconductor is formed with one element A selected from Ga, Al, and In and one element B selected from N and P. The element A of the compound semiconductor is replaced by one element C selected from Mn, Mg, Co, Fe, Ni, Cr, and V. The Curie temperature of the room temperature operating magnetic semiconductor is more than the room temperature.

Abstract translation: 目的：提供通过PEMBE（等离子体增强分子束外延）方法制造的室温操作铁磁半导体和使用其的电子器件，以通过获得磁性半导体的特性，将磁性半导体施加到自旋电子器件 室内温度。 构成：通过PEMBE法制造的室温操作铁磁半导体包括第三至第五组的化合物半导体。 化合物半导体由选自Ga，Al和In的一种元素A和选自N和P的一种元素B形成。化合物半导体的元素A被选自Mn，Mg，Co，Fe， Ni，Cr和V.室温操作磁性半导体的居里温度大于室温。

公开(公告)号：KR100492482B1

公开(公告)日：2005-06-03

申请号：KR1020020053306

申请日：2002-09-04

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  한석희 ,  장준연 ,  김희중 ,  이정미 ,  명재민

IPC: H01L43/00 ,  C30B29/38 ,  H01F10/193

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/404 ,  H01F10/193 ,  H01F10/3213 ,  H01F41/30 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66984 ,  H01L33/40 ,  H01L43/08 ,  H01L43/10

Abstract: A 3 group - 5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material 'C' selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material 'A', the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.