公开(公告)号：KR100370659B1

公开(公告)日：2003-02-05

申请号：KR1020000082009

申请日：2000-12-26

Applicant: 한국과학기술연구원

Inventor： 김은규 ,  박용주 ,  김태환 ,  강승언 ,  추동철 ,  심재환

IPC: H01L21/265 ,  B82Y40/00

CPC classification number: C23C14/5833 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/5873 ,  C30B13/24 ,  C30B29/605 ,  H01L21/265 ,  Y10S977/949

Abstract: Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.

Abstract translation: 公开了一种形成纳米晶体的方法。 在上述方法中，准备了形成有金属膜或半导体膜的基板。 将聚焦离子束照射到金属膜或半导体膜的表面上的多个位置上，由此在聚焦离子束的焦点部分除去金属膜或半导体膜，但是在 由于聚焦离子束的辐射作用，金属膜或半导体膜在聚焦离子束的重叠区域被破坏以形成纳米晶体。 该方法允许使用聚焦离子束容易且简单地形成几纳米或更小尺寸的纳米晶体。 结果，所形成的纳米晶体在室温下具有能够抑制热波动现象的结合能量，从而可以制造能够在室温下操作的隧穿晶体管。 此外，本发明在很大程度上有助于开发具有四字节或更高的存储容量的下一代超高密度存储器件。

公开(公告)号：KR1020020058151A

公开(公告)日：2002-07-12

申请号：KR1020000085534

申请日：2000-12-29

Applicant: 한국과학기술연구원

Inventor： 김은규 ,  박용주 ,  김태환 ,  강승언 ,  추동철 ,  심재환

IPC: H01L29/68 ,  B82Y10/00

CPC classification number: B82Y10/00 ,  H01L29/66439 ,  H01L29/7613 ,  H01L49/006

Abstract: PURPOSE: A method for fabricating a single electron tunneling transistor operated under normal temperature using focus ion beam is provided to form the single electron tunneling transistor operated under normal temperature by using a focus ion beam. CONSTITUTION: An insulating layer(20) and a conductive layer are formed on a substrate(10). The conductive layer is patterned to expose the insulating layer(20). A source electrode(30b), a drain electrode(30c), and a gate electrode(30a) are formed by patterning the conductive layer. A single electron tunnel junction(60) and a capacity junction(70) are formed by irradiating a Ga+ focus ion beam. The single electron tunnel junction(60) is formed between the source electrode(30b) and the drain electrode(30c). The capacity junction(70) is formed between the single electron tunnel junction(60) and the gate electrode(30a).

Abstract translation: 目的：提供在常温下使用聚焦离子束制造单电子隧道晶体管的方法，以形成通过使用聚焦离子束在常温下工作的单电子隧道晶体管。 构成：在基板（10）上形成绝缘层（20）和导电层。 图案化导电层以暴露绝缘层（20）。 通过图案化导电层来形成源电极（30b），漏电极（30c）和栅电极（30a）。 通过照射Ga +聚焦离子束形成单电子隧道结（60）和电容结（70）。 单电子隧道结（60）形成在源极（30b）和漏电极（30c）之间。 电容结（70）形成在单电子隧道结（60）和栅电极（30a）之间。

公开(公告)号：KR1020020053957A

公开(公告)日：2002-07-06

申请号：KR1020000082009

申请日：2000-12-26

Applicant: 한국과학기술연구원

Inventor： 김은규 ,  박용주 ,  김태환 ,  강승언 ,  추동철 ,  심재환

IPC: H01L21/265 ,  B82Y40/00

CPC classification number: C23C14/5833 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/5873 ,  C30B13/24 ,  C30B29/605 ,  H01L21/265 ,  Y10S977/949

Abstract: PURPOSE: A method for fabricating a nano crystal using a focused ion beam is provided to fabricate a single electron tunneling transistor(SET) operating at a room temperature, by forming the nano crystal having a size not greater than several nanometer. CONSTITUTION: A focused ion beam is radiated to several portions on a metal layer or a semiconductor layer. The metal layer or the semiconductor layer where the focused ion beam is focused is eliminated. The combination of an atom structure of the metal layer or the semiconductor layer where the focused ion beams overlap each other is broken to form the nano crystal(36a) by a radioactive effect of the focused ion beam.

Abstract translation: 目的：提供一种使用聚焦离子束制造纳米晶体的方法，通过形成尺寸不大于几纳米的纳米晶体，制造在室温下工作的单电子隧穿晶体管（SET）。 构成：聚焦离子束辐射到金属层或半导体层上的几个部分。 消除聚焦离子束聚焦的金属层或半导体层。 聚焦离子束彼此重叠的金属层或半导体层的原子结构的组合被破坏，以通过聚焦离子束的放射性效应形成纳米晶体（36a）。