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公开(公告)号：KR100370659B1
公开(公告)日：2003-02-05
申请号：KR1020000082009
申请日：2000-12-26
Applicant: 한국과학기술연구원
IPC: H01L21/265 , B82Y40/00
CPC classification number: C23C14/5833 , B82Y10/00 , B82Y30/00 , C23C14/5873 , C30B13/24 , C30B29/605 , H01L21/265 , Y10S977/949
Abstract: Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.
Abstract translation: 公开了一种形成纳米晶体的方法。 在上述方法中，准备了形成有金属膜或半导体膜的基板。 将聚焦离子束照射到金属膜或半导体膜的表面上的多个位置上，由此在聚焦离子束的焦点部分除去金属膜或半导体膜，但是在 由于聚焦离子束的辐射作用，金属膜或半导体膜在聚焦离子束的重叠区域被破坏以形成纳米晶体。 该方法允许使用聚焦离子束容易且简单地形成几纳米或更小尺寸的纳米晶体。 结果，所形成的纳米晶体在室温下具有能够抑制热波动现象的结合能量，从而可以制造能够在室温下操作的隧穿晶体管。 此外，本发明在很大程度上有助于开发具有四字节或更高的存储容量的下一代超高密度存储器件。
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公开(公告)号：KR100577738B1
公开(公告)日：2006-05-10
申请号：KR1020040075667
申请日：2004-09-21
Applicant: 한국과학기술연구원
IPC: H01L21/477 , H01L21/20
Abstract: 본 발명은 전하운반자를 포획하는 성질을 가진 자발형성 양자점을 포함하는 단층 혹은 다층 구조의 반도체층 상부에 금속탐침을 위치시켜 금속탐침과 반도체간에 전계를 인가함으로써 자발형성 양자점 상부의 반도체층에 반전 영역이 형성되도록 함으로써 자발형성 양자점과 국소 반전층에 따른 인공 양자점 사이의 커플된 양자 구조를 형성한다. 본 발명에 따르면, 새로운 커플된 양자구조가 가능하며, 이를 이용한 새로운 양자소자가 가능하다.
커플된 양자점, 인공 양자점, 자발형성 양자점, 금속탐침, 국소 반전층.Abstract translation: 反转为自发形成量子点顶部的半导体层的本发明通过将金属探针放置到半导体层的单层或多层结构的上部包括一个自发形式施加在金属之间的电场具有俘获电荷载体末端的性质和半导体区的量子点 从而根据自发形成量子点和局部反转层在人造量子点之间形成耦合的量子结构。 根据本发明，新的耦合量子结构是可能的，并且使用它的新量子器件是可能的。
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公开(公告)号：KR1020030082030A
公开(公告)日：2003-10-22
申请号：KR1020020020532
申请日：2002-04-16
Applicant: 한국과학기술연구원
IPC: H01J27/26
Abstract: PURPOSE: A method for fabricating a coil type liquid metal ion source including a liquid metal supply path is provided to generate stably ion beams by controlling the supply of the liquid metal. CONSTITUTION: An emitter(3) is etched by performing an electrochemical etching process. The emitter(3) including a liquid metal supply path is fabricated by etching the emitter(3). A coil type liquid metal storage tank(7) is provided. The liquid metal is transferred from a high vacuum chamber to the coil type liquid metal storage tank(7). The coil type liquid metal is formed with Gallium. The coil type liquid metal storage tank(7) is fabricated by tungsten filament. The emitter(3) is fabricated by tungsten wire. The electrochemical etching process includes a preliminary etching process, a pointing etching process, and a blunting etching process.
Abstract translation: 目的：提供一种制造包括液态金属供应路径的线圈型液态金属离子源的方法，以通过控制液态金属的供应来产生稳定的离子束。 构成：通过进行电化学蚀刻工艺来蚀刻发射体（3）。 通过蚀刻发射体（3）制造包括液态金属供给路径的发射体（3）。 提供一种线圈型液态金属储罐（7）。 液体金属从高真空室转移到线圈型液态金属储罐（7）。 线圈型液态金属由镓形成。 线圈型液态金属储罐（7）由钨丝制成。 发射极（3）由钨丝制成。 电化学蚀刻工艺包括初步蚀刻工艺，指向蚀刻工艺和钝化蚀刻工艺。
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Patent Agency Ranking
公开(公告)号：KR1020020058151A
公开(公告)日：2002-07-12
申请号：KR1020000085534
申请日：2000-12-29
Applicant: 한국과학기술연구원
CPC classification number: B82Y10/00 , H01L29/66439 , H01L29/7613 , H01L49/006
Abstract: PURPOSE: A method for fabricating a single electron tunneling transistor operated under normal temperature using focus ion beam is provided to form the single electron tunneling transistor operated under normal temperature by using a focus ion beam. CONSTITUTION: An insulating layer(20) and a conductive layer are formed on a substrate(10). The conductive layer is patterned to expose the insulating layer(20). A source electrode(30b), a drain electrode(30c), and a gate electrode(30a) are formed by patterning the conductive layer. A single electron tunnel junction(60) and a capacity junction(70) are formed by irradiating a Ga+ focus ion beam. The single electron tunnel junction(60) is formed between the source electrode(30b) and the drain electrode(30c). The capacity junction(70) is formed between the single electron tunnel junction(60) and the gate electrode(30a).
Abstract translation: 目的：提供在常温下使用聚焦离子束制造单电子隧道晶体管的方法，以形成通过使用聚焦离子束在常温下工作的单电子隧道晶体管。 构成：在基板（10）上形成绝缘层（20）和导电层。 图案化导电层以暴露绝缘层（20）。 通过图案化导电层来形成源电极（30b），漏电极（30c）和栅电极（30a）。 通过照射Ga +聚焦离子束形成单电子隧道结（60）和电容结（70）。 单电子隧道结（60）形成在源极（30b）和漏电极（30c）之间。 电容结（70）形成在单电子隧道结（60）和栅电极（30a）之间。
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公开(公告)号：KR1020020053957A
公开(公告)日：2002-07-06
申请号：KR1020000082009
申请日：2000-12-26
Applicant: 한국과학기술연구원
IPC: H01L21/265 , B82Y40/00
CPC classification number: C23C14/5833 , B82Y10/00 , B82Y30/00 , C23C14/5873 , C30B13/24 , C30B29/605 , H01L21/265 , Y10S977/949
Abstract: PURPOSE: A method for fabricating a nano crystal using a focused ion beam is provided to fabricate a single electron tunneling transistor(SET) operating at a room temperature, by forming the nano crystal having a size not greater than several nanometer. CONSTITUTION: A focused ion beam is radiated to several portions on a metal layer or a semiconductor layer. The metal layer or the semiconductor layer where the focused ion beam is focused is eliminated. The combination of an atom structure of the metal layer or the semiconductor layer where the focused ion beams overlap each other is broken to form the nano crystal(36a) by a radioactive effect of the focused ion beam.
Abstract translation: 目的：提供一种使用聚焦离子束制造纳米晶体的方法，通过形成尺寸不大于几纳米的纳米晶体，制造在室温下工作的单电子隧穿晶体管（SET）。 构成：聚焦离子束辐射到金属层或半导体层上的几个部分。 消除聚焦离子束聚焦的金属层或半导体层。 聚焦离子束彼此重叠的金属层或半导体层的原子结构的组合被破坏，以通过聚焦离子束的放射性效应形成纳米晶体（36a）。
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公开(公告)号：KR100379617B1
公开(公告)日：2003-04-10
申请号：KR1020010015609
申请日：2001-03-26
Applicant: 한국과학기술연구원
IPC: H01L29/15
CPC classification number: B82Y10/00 , H01L21/02392 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/0259 , H01L21/0262 , H01L29/125 , H01L29/127
Abstract: Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using the binding property of atomic bonding due to chemical bonding steps of the tilted substrate, and the spacing of the wire-like quantum dots is varied by using the step width of the tilted substrate which is transformed due to a partial pressure of a source gas and the thickness of a buffer layer. The invention allows materials having an inconsistency in the lattice constant to be freely formed in the form of quantum wires with a growing technique only and accordingly to be used as base materials in use for manufacture of novel concept of optoelectronic devices which have not been obtained so far.
Abstract translation: 公开了一种形成量子点阵列的方法。 在本发明的方法中，通过使用由于倾斜的化学键合步骤引起的原子键合的键合性质，在倾斜基板上的晶格常数不一致的材料中形成具有良好质量的线状量子点的结构 并且通过使用由于源气体的分压和缓冲层的厚度而变形的倾斜基板的台阶宽度来改变线状量子点的间隔。 本发明允许具有晶格常数不一致的材料仅以增长技术以量子线的形式自由形成，并且因此用作用于制造尚未如此获得的光电子器件的新概念的基材 远。
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公开(公告)号：KR1020020075545A
公开(公告)日：2002-10-05
申请号：KR1020010015609
申请日：2001-03-26
Applicant: 한국과학기술연구원
IPC: H01L29/15
CPC classification number: B82Y10/00 , H01L21/02392 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/0259 , H01L21/0262 , H01L29/125 , H01L29/127
Abstract: PURPOSE: A method for forming a quantum point array using an inclined substrate is provided to arrange materials of which grating constants are largely inconsistent to each other in quantum points as quantum wire of high quality. CONSTITUTION: A substrate which has a constant determined axis and is inclined to the constant determined axis is prepared. A buffer layer of the same quality as the substrate is formed on an upper portion of the substrate by using a chemical vapor deposition method. A material which is largely inconsistent with the substrate in a grating constant grows on the substrate. A quantum wire of high quality is formed by controlling a partial pressure of a source gas and thickness of the buffer layer, and thickness of the material layer in the chemical deposition process of the buffer layer.
Abstract translation: 目的：提供一种使用倾斜衬底形成量子点阵列的方法，用于将量子点上光栅常数彼此大体上不一致的材料排列成高品质的量子线。 构成：制备具有恒定的测定轴并倾斜于恒定的测定轴的衬底。 通过使用化学气相沉积法在衬底的上部形成与衬底相同质量的缓冲层。 在光栅常数上与衬底大致不一致的材料在衬底上生长。 通过在缓冲层的化学沉积过程中控制源气体的分压和缓冲层的厚度以及材料层的厚度来形成高质量的量子线。
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公开(公告)号：KR1020060026797A
公开(公告)日：2006-03-24
申请号：KR1020040075667
申请日：2004-09-21
Applicant: 한국과학기술연구원
IPC: H01L21/477 , H01L21/20
CPC classification number: H01L29/66977
Abstract: 본 발명은 전하운반자를 포획하는 성질을 가진 자발형성 양자점을 포함하는 단층 혹은 다층 구조의 반도체층 상부에 금속탐침을 위치시켜 금속탐침과 반도체간에 전계를 인가함으로써 자발형성 양자점 상부의 반도체층에 반전 영역이 형성되도록 함으로써 자발형성 양자점과 국소 반전층에 따른 인공 양자점 사이의 커플된 양자 구조를 형성한다. 본 발명에 따르면, 새로운 커플된 양자구조가 가능하며, 이를 이용한 새로운 양자소자가 가능하다.
커플된 양자점, 인공 양자점, 자발형성 양자점, 금속탐침, 국소 반전층.
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