公开(公告)号：KR101388523B1

公开(公告)日：2014-04-24

申请号：KR1020130018424

申请日：2013-02-21

Applicant: 한국과학기술연구원

Inventor： 송진동 ,  이은혜 ,  배민환 ,  최원준 ,  한일기 ,  오현지

IPC: H01L21/20 ,  H01L21/02

CPC classification number: H01L21/02466 ,  H01L21/02381 ,  H01L21/02502 ,  H01L21/02546

Abstract: Disclosed are a manufacturing method for a compound semiconductor substrate using a silicon-based lattice mismatching elimination layer, which includes a step of forming an AlAsSb layer on a silicon substrate; a step of forming an AlAs on the AlAsSb layer; and a step of forming a GaAs layer on the AlAs, and a compound semiconductor substrate manufactured by the same.

Abstract translation: 公开了一种使用硅基晶格失配消除层的化合物半导体衬底的制造方法，其包括在硅衬底上形成AlAsSb层的步骤; 在AlAsSb层上形成AlAs的步骤; 以及在AlAs上形成GaAs层的工序，以及由其制造的化合物半导体基板。