公开(公告)号：KR101388523B1

公开(公告)日：2014-04-24

申请号：KR1020130018424

申请日：2013-02-21

Applicant: 한국과학기술연구원

Inventor： 송진동 ,  이은혜 ,  배민환 ,  최원준 ,  한일기 ,  오현지

IPC: H01L21/20 ,  H01L21/02

CPC classification number: H01L21/02466 ,  H01L21/02381 ,  H01L21/02502 ,  H01L21/02546

Abstract: Disclosed are a manufacturing method for a compound semiconductor substrate using a silicon-based lattice mismatching elimination layer, which includes a step of forming an AlAsSb layer on a silicon substrate; a step of forming an AlAs on the AlAsSb layer; and a step of forming a GaAs layer on the AlAs, and a compound semiconductor substrate manufactured by the same.

Abstract translation: 公开了一种使用硅基晶格失配消除层的化合物半导体衬底的制造方法，其包括在硅衬底上形成AlAsSb层的步骤; 在AlAsSb层上形成AlAs的步骤; 以及在AlAs上形成GaAs层的工序，以及由其制造的化合物半导体基板。

公开(公告)号：KR101351987B1

公开(公告)日：2014-01-17

申请号：KR1020120118229

申请日：2012-10-24

Applicant: 한국과학기술연구원

Inventor： 송진동 ,  이은혜 ,  배민환 ,  한일기 ,  최원준

IPC: H01L21/20

Abstract: The present invention is a manufacturing method including a step of forming a first AlSb layer on a Si substrate and a compound semiconductor layer on the first AlSb layer. A compound semiconductor substrate is manufactured by using various lattice mismatch removal layers such as various kinds of AaGa sacrificial layer, AlSb/AlGaSb SPS, etc. The compound semiconductor substrate may be a GaSb layer.

Abstract translation: 本发明是一种制造方法，包括在Si衬底上形成第一AlSb层和在第一AlSb层上形成化合物半导体层的步骤。 通过使用各种AaGa牺牲层，AlSb / AlGaSb SPS等的各种晶格失配去除层来制造化合物半导体衬底。化合物半导体衬底可以是GaSb层。

公开(公告)号：KR101429118B1

公开(公告)日：2014-08-14

申请号：KR1020130012165

申请日：2013-02-04

Applicant: 한국과학기술연구원

Inventor： 송진동 ,  이은혜 ,  배민환 ,  최원준 ,  윤재진 ,  한일기

IPC: G02B1/113 ,  B32B15/01 ,  B82Y30/00

CPC classification number: H01L31/02168 ,  H01L33/44 ,  Y02E10/50 ,  G02B1/113 ,  B32B15/01 ,  B82Y30/00

Abstract: According to an embodiment of the present invention, disclosed is a method for manufacturing an antireflection film using a self-assembly nanostructure, including a step for forming a first metal drop by using drop feed growth on a substrate; a step for depositing a first nonmetal onto the first metal drop; and a step for forming a first nanocompound crystal through the self-assembly of the deposited first nonmetal and first metal drop.

Abstract translation: 根据本发明的一个实施方案，公开了一种使用自组装纳米结构制造抗反射膜的方法，其包括通过在基板上使用液滴进料生长形成第一金属液滴的步骤; 用于将第一非金属沉积到所述第一金属滴上的步骤; 以及通过沉积的第一非金属和第一金属液滴的自组装形成第一纳米复合晶体的步骤。