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公开(公告)号：KR1020060083348A
公开(公告)日：2006-07-20
申请号：KR1020050003859
申请日：2005-01-14
Applicant: 한국과학기술연구원
IPC: C01B31/02
Abstract: 본 발명은 수소를 거의 함유하지 않고 sp
3 분율이 높으며, 잔류응력이 감소되고 전기 저항이 증가된 것을 특징으로 하는 경질 탄소 박막을 제공한다. 이 박막은 아크 방전에 의하여 고체 탄소원의 아크젯 플라즈마를 발생시키고, 상기 반응 챔버에 아르곤을 일정한 유량으로 공급하여 상기 기판 상에 형성된다.
경질 탄소 박막, 진공여과아크법, 아르곤 가스, 잔류응력-
公开(公告)号：KR100465738B1
公开(公告)日：2005-01-13
申请号：KR1020020038706
申请日：2002-07-04
Applicant: 한국과학기술연구원
IPC: C23C14/06
Abstract: PURPOSE: A hard carbon film is provided which does not deteriorate mechanical properties even though residual stress is being reduced, and a manufacturing method of the hard carbon film is provided which is capable of freely controlling structure of the thin film as adding a third element to the carbon film. CONSTITUTION: The multi layer hard carbon film comprises first hard carbon film layer which contains 0.025 to 10 at.% of silicon and is formed of diamond-like carbon; and second hard carbon film layer formed of pure diamond-like carbon only, wherein the multi layer hard carbon film is a multi layer formed by alternately laying up the first hard carbon film layer and second hard carbon film layer. The method comprises the processes of generating carbon plasma by impressing a power supply to an anode and a cathode on which a solid phase carbon source is mounted; mounting a silicon target on a sputter gun, and impressing a power supply to the sputter gun as varying the power supply periodically so that silicon is sputtered; and alternately depositing silicon contained first hard carbon film layer and second hard carbon film layer formed of carbon only on a substrate installed in reaction chamber.
Abstract translation: 目的：提供一种硬质碳膜，其即使在残余应力降低的情况下也不降低机械性能，并且提供了一种硬质碳膜的制造方法，该硬质碳膜能够自由地控制薄膜的结构， 碳膜。 构成：多层硬碳膜包含第一硬碳膜层，其含有0.025-10原子％的硅并由类金刚石碳形成; 以及仅由纯金刚石状碳形成的第二硬碳膜层，其中，所述多层硬碳膜为交替铺设第一硬碳膜层和第二硬碳膜层而形成的多层膜。 该方法包括通过向阳极施加电源来产生碳等离子体的过程和其上安装有固相碳源的阴极; 将硅靶安装在溅射枪上，并且周期性地改变电源以使硅溅射;以及向电子枪施加电源， 仅在安装在反应室中的基板上交替地沉积含硅的第一硬碳膜层和由碳形成的第二硬碳膜层。
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公开(公告)号：KR100436565B1
公开(公告)日：2004-06-19
申请号：KR1020010067540
申请日：2001-10-31
Applicant: 한국과학기술연구원
IPC: C23C14/34
Abstract: PURPOSE: A preparation method for reducing residual stress as maintaining superior mechanical properties by adding silicon as a third element to silicon incorporated tetrahedral amorphous carbon thin film is provided. CONSTITUTION: The preparation method of silicon incorporated tetrahedral amorphous carbon thin film is characterized in that the silicon incorporated tetrahedral amorphous carbon thin film contains silicon by sputtering silicon using magnetron sputtering method at the same time when depositing the silicon incorporated tetrahedral amorphous carbon thin film using filtered vacuum arc deposition method, wherein the preparation method comprises the step of generating carbon plasma using the filtered vacuum arc deposition method by mounting a solid carbon source on the filter vacuum arc equipment and impressing a filtered vacuum arc power source to the filter vacuum arc equipment using a filtered vacuum arc equipment comprising arc ion source part (11), magnetic filtering part (12) and raster unit (12), a magnetron sputtering part comprising magnetron sputter gun (15) and sputter power supply system, and a synthesizing equipment comprising reaction chamber, and simultaneously depositing carbon and silicon on a substrate (14) mounted in the reaction chamber by mounting silicon on the sputter gun of the magnetron sputtering part and impressing a magnetron sputtering power source to the sputter gun, thereby sputtering the silicon at the same time.
Abstract translation: 目的：提供一种通过向硅结合的四面体非晶碳薄膜添加硅作为第三元素来保持优异的机械性能以减少残余应力的制备方法。 一种硅掺入四面体无定形碳薄膜的制备方法，其特征在于，在掺入硅的四面体无定形碳薄膜的同时，采用磁控溅射方法溅射硅， 其中所述制备方法包括使用经过滤的真空电弧沉积方法通过在所述过滤器真空电弧设备上安装固体碳源并且将过滤后的真空电弧电源施加到所述过滤器真空电弧设备来产生碳等离子体的步骤， 包括电弧离子源部件（11），磁性过滤部件（12）和光栅单元（12）的过滤真空电弧设备，包括磁控溅射枪（15）和溅射电源系统的磁控溅射部件以及包括反应 室，并同时存放汽车 通过将硅安装在磁控溅射部件的溅射枪上，并将磁控溅射电源施加到溅射枪上，从而同时溅射硅，从而在安装在反应室中的衬底（14）
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Patent Agency Ranking
公开(公告)号：KR1020040003879A
公开(公告)日：2004-01-13
申请号：KR1020020038706
申请日：2002-07-04
Applicant: 한국과학기술연구원
IPC: C23C14/06
CPC classification number: C23C28/42 , C22C29/02 , C23C14/0611 , C23C14/35
Abstract: PURPOSE: A hard carbon film is provided which does not deteriorate mechanical properties even though residual stress is being reduced, and a manufacturing method of the hard carbon film is provided which is capable of freely controlling structure of the thin film as adding a third element to the carbon film. CONSTITUTION: The multi layer hard carbon film comprises first hard carbon film layer which contains 0.025 to 10 at.% of silicon and is formed of diamond-like carbon; and second hard carbon film layer formed of pure diamond-like carbon only, wherein the multi layer hard carbon film is a multi layer formed by alternately laying up the first hard carbon film layer and second hard carbon film layer. The method comprises the processes of generating carbon plasma by impressing a power supply to an anode and a cathode on which a solid phase carbon source is mounted; mounting a silicon target on a sputter gun, and impressing a power supply to the sputter gun as varying the power supply periodically so that silicon is sputtered; and alternately depositing silicon contained first hard carbon film layer and second hard carbon film layer formed of carbon only on a substrate installed in reaction chamber.
Abstract translation: 目的：提供即使残留应力降低也不会降低机械性能的硬质碳膜，并且提供了能够自由地控制薄膜结构的硬碳膜的制造方法，因为添加第三元素 碳膜。 构成：多层硬质碳膜由含有0.025〜10原子％的硅，由金刚石状碳构成的第一硬质碳膜层构成， 和仅由纯金刚石碳形成的第二硬质碳膜层，其中多层硬质碳膜是通过交替铺设第一硬质碳膜层和第二硬质碳膜层而形成的多层。 该方法包括通过向其上安装固相碳源的阳极和阴极施加电力来产生碳等离子体的方法; 将硅靶安装在溅射枪上，并且在周期性地改变电源时将电源施加到溅射枪，使得硅被溅射; 并且交替地将含有第一硬碳膜层的硅和由碳形成的第二硬碳膜层沉积在安装在反应室中的基板上。
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公开(公告)号：KR1020040107536A
公开(公告)日：2004-12-21
申请号：KR1020030038361
申请日：2003-06-13
Applicant: 한국과학기술연구원
CPC classification number: C23C14/0611 , B82Y30/00 , C23C14/205 , C23C14/221 , C23C14/35 , C23C14/5806
Abstract: PURPOSE: To provide a method for fabricating a rigid carbon nanocomposite thin film comprising a nano sized graphite phase material in a diamond-like amorphous carbon thin film by depositing carbon after forming nano-dots of reactive materials, a rigid carbon nanocomposite thin film fabricated by the method, and a method for controlling size of graphitized portion by controlling size of metal dots. CONSTITUTION: In a rigid carbon thin film comprising a diamond-like amorphous carbon thin film having high electrical resistance and low electrical conductivity, and a graphite phase portion having low electrical resistance and high electrical conductivity formed to a nano-size formed in the diamond-like amorphous carbon thin film, the rigid carbon nanocomposite thin film is characterized in that it is consisted of the same element and has partially different electrical conductivity.
Abstract translation: 目的：提供一种通过在形成纳米点的反应性材料之后沉积碳，在金刚石状无定形碳薄膜中制备纳米尺寸的石墨相材料的刚性碳纳米复合材料薄膜的方法，由刚性碳纳米复合薄膜制成的刚性碳纳米复合材料薄膜 该方法以及通过控制金属点的尺寸来控制石墨化部分的尺寸的方法。 构成：在包含具有高电阻和低导电性的类金刚石状无定形碳薄膜的硬质碳薄膜中，以及形成为在金刚石 - 氧化物中形成的纳米尺寸的具有低电阻和高导电性的石墨相部分， 如无定形碳薄膜，刚性碳纳米复合薄膜的特征在于它由相同的元件组成并具有部分不同的导电性。
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公开(公告)号：KR100612914B1
公开(公告)日：2006-08-16
申请号：KR1020050003859
申请日：2005-01-14
Applicant: 한국과학기술연구원
IPC: C01B31/02
Abstract: 본 발명은 수소를 거의 함유하지 않고 sp
3 분율이 높으며, 잔류응력이 감소되고 전기 저항이 증가된 것을 특징으로 하는 경질 탄소 박막을 제공한다. 이 박막은 아크 방전에 의하여 고체 탄소원의 아크젯 플라즈마를 발생시키고, 상기 반응 챔버에 아르곤을 일정한 유량으로 공급하여 상기 기판 상에 형성된다.
경질 탄소 박막, 진공여과아크법, 아르곤 가스, 잔류응력Abstract translation: 本发明涉及一种生产藻类的方法
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公开(公告)号：KR100514347B1
公开(公告)日：2005-09-13
申请号：KR1020030038361
申请日：2003-06-13
Applicant: 한국과학기술연구원
Abstract: 본 발명은 우선 기판 표면에 Ni, Cu, Pd, Au, Ag, Fe, Co, Mn, Cr, V, Mo, Nb, Ru, 및 Rh 등과 같은 금속을 포함하는 군 중에서 선택된 반응성 물질의 나노 도트(nano-dots)를 형성시킨 후, 탄소를 증착하여, 다이아몬드상 비정질 탄소 박막 내에 나노규모의 흑연상 물질을 포함하는 경질 탄소 나노복합체 박막을 제조하는 방법 및 다이아몬드상 비정질 탄소 박막 내에 나노규모의 흑연상 물질을 포함하는 경질 탄소 나노복합체 박막에 관한 것이다. 또한, 본 발명은 금속 도트의 크기를 조절함으로써, 흑연화된 부분의 크기를 제어할 수 있는 방법에 관한 것이다.
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公开(公告)号：KR1020030035444A
公开(公告)日：2003-05-09
申请号：KR1020010067540
申请日：2001-10-31
Applicant: 한국과학기술연구원
IPC: C23C14/34
CPC classification number: C23C14/0611 , C23C14/185 , C23C14/325 , C23C14/345 , C23C14/35
Abstract: PURPOSE: A preparation method for reducing residual stress as maintaining superior mechanical properties by adding silicon as a third element to silicon incorporated tetrahedral amorphous carbon thin film is provided. CONSTITUTION: The preparation method of silicon incorporated tetrahedral amorphous carbon thin film is characterized in that the silicon incorporated tetrahedral amorphous carbon thin film contains silicon by sputtering silicon using magnetron sputtering method at the same time when depositing the silicon incorporated tetrahedral amorphous carbon thin film using filtered vacuum arc deposition method, wherein the preparation method comprises the step of generating carbon plasma using the filtered vacuum arc deposition method by mounting a solid carbon source on the filter vacuum arc equipment and impressing a filtered vacuum arc power source to the filter vacuum arc equipment using a filtered vacuum arc equipment comprising arc ion source part (11), magnetic filtering part (12) and raster unit (12), a magnetron sputtering part comprising magnetron sputter gun (15) and sputter power supply system, and a synthesizing equipment comprising reaction chamber, and simultaneously depositing carbon and silicon on a substrate (14) mounted in the reaction chamber by mounting silicon on the sputter gun of the magnetron sputtering part and impressing a magnetron sputtering power source to the sputter gun, thereby sputtering the silicon at the same time.
Abstract translation: 目的：提供一种通过将硅作为第三元素加入到四面体非晶碳薄膜中而将残余应力降低以维持优异的机械性能的制备方法。 构成：掺入硅的四面体非晶碳薄膜的制备方法的特征在于，通过使用磁控溅射法通过溅射硅来包含硅的四面体非晶碳薄膜，同时使用过滤的硅嵌入的四面体非晶碳薄膜 真空电弧沉积方法，其中制备方法包括使用过滤的真空电弧沉积法，通过在过滤器真空电弧设备上安装固体碳源并将过滤后的真空电弧电源施加到过滤器真空电弧设备上来产生碳等离子体 包括电弧离子源部分（11），磁性过滤部分（12）和光栅单元（12）的过滤真空电弧设备，包括磁控溅射枪（15）和溅射电源系统的磁控溅射部分，以及包括反应 室，同时存放车 通过将硅安装在磁控管溅射部分的溅射枪上并将磁控溅射功率源施加到溅射枪上而安装在反应室中的衬底（14）上，从而同时溅射硅。
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