公开(公告)号：KR101401419B1

公开(公告)日：2014-05-30

申请号：KR1020120138346

申请日：2012-11-30

Applicant: 한국과학기술연구원

Inventor： 장소현 ,  알버트이성수 ,  구종민 ,  홍순만 ,  황승상 ,  백경열 ,  오성연 ,  최승석

IPC: H01B3/46 ,  C08L83/04 ,  C08L83/06

Abstract: The present invention relates to a low dielectric interlayer material and a method for preparing the same, wherein the low dielectric interlayer material includes a cyclic siloxane compound or bis (trialkoxy silyl) alkane (BTASA), silane compounds, and copolymers combined with a cage type polysilsesquioxane, and the cage type polysilsesquioxane forming gaps. The low dielectric interlayer material according to the present invention has high strength and a low dielectric constant, and excellent chemical, electrical, and thermal properties, thereby capable of being usefully applied to a device.

Abstract translation: 本发明涉及一种低介电中间层材料及其制备方法，其中低介电中间层材料包括环状硅氧烷化合物或双（三烷氧基甲硅烷基）烷烃（BTASA），硅烷化合物和与笼型结合的共聚物 聚倍半硅氧烷和笼型聚倍半硅氧烷形成间隙。 根据本发明的低介电中间层材料具有高强度和低介电常数，并且具有优异的化学，电和热性能，因此能够有效地应用于器件。